UPG2137T5A-E1 [NEC]
Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, PLASTIC, TSON-16;型号: | UPG2137T5A-E1 |
厂家: | NEC |
描述: | Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, PLASTIC, TSON-16 |
文件: | 总12页 (文件大小:88K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2137T5A
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2137T5A is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-
band application.
This device is housed in a 16-pin TSON (Thin small out-line non-leaded) package. And this package is able to
high-density surface mounting.
FEATURES
•
•
•
•
Operation frequency
Supply voltage
Circuit current
Power gain
: fopt1 = 893 to 960 MHz (0.8 GHz Band side)
: fopt2 = 1 429 to 1 453 MHz (1.5 GHz Band side)
: VDD1, 3 = 2.55 to 2.85 V (2.7 V TYP.)
: VDD2, 4 = 3.0 to 4.3 V (3.2 V TYP.)
: IDD1 = 28 mA TYP. @ VDD1 = 2.7 V, VDD2 = 3.2 V, VAGC = 2.5 V (0.8 GHz Band side)
: IDD2 = 33 mA TYP. @ VDD3 = 2.7 V, VDD4 = 3.2 V, VAGC = 2.5 V (1.5 GHz Band side)
: GP1 = 27 dB TYP. @ VDD1 = 2.7 V, VDD2 = 3.2 V, VAGC = 2.5 V (0.8 GHz Band side)
GP2 = −13 dB TYP. @ VDD1 = 2.7 V, VDD2 = 3.2 V, VAGC = 0.5 V (0.8 GHz Band side)
GP3 = 30 dB TYP. @ VDD3 = 2.7 V, VDD4 = 3.2 V, VAGC = 2.5 V (1.5 GHz Band side)
GP4 = −10 dB TYP. @ VDD3 = 2.7 V, VDD4 = 3.2 V, VAGC = 0.5 V (1.5 GHz Band side)
: Padj1, 3 = −60 dBc TYP. @ VDD1, 3 = 2.7 V, VDD2, 4 = 3.2 V, VAGC = 2.5 V, Pout = +11 dBm,
∆f = ±50 kHz, 21 kHz Bandwidth (0.8/1.5 GHz Band side)
•
•
Low distortion
High-density surface mounting : 16-pin TSON package (3.3 × 2.3 × 0.6 mm)
APPLICATION
Digital Cellular: PDC 0.8/1.5 GHz Dual Band etc.
•
ORDERING INFORMATION
Part Number
Package
Marking
2137
Supplying Form
• Embossed tape 12 mm wide
µPG2137T5A-E1 16-pin TSON
• Pin 8, 9 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2137T5A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10340EJ01V0DS (1st edition)
Date Published March 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003
µPG2137T5A
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
Pin Name
(Top View)
(Top View)
1
2
INPUT1 (0.8 GHz Band side)
16 15 14 13 12 11 10
9
16 15 14 13 12 11 10
9
GND
GND
3
4
VDD1 (0.8 GHz Band side)
VDD2 (0.8 GHz Band side)
GND
2137
5
6
7
OUTPUT1 (0.8 GHz Band side)
OUTPUT2 (0.8 GHz Band side)
VSW (0.8 GHz Band side)
OUTPUT3 (1.5 GHz Band side)
VDD4 (1.5 GHz Band side)
VDD3 (1.5 GHz Band side)
GND
1
9
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
8
(Bottom View)
10 11 12 13 14 15 16
9
10
11
12
13
14
15
16
GND
INPUT2 (1.5 GHz Band side)
VAGC
8
7
6
5
4
3
2
1
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage1, 2, 3, 4
Gain Control Voltage
Switch Control Volage
Input Power 1 (1 pin)
Input Power 2 (15 pin)
Power Dissipation
Symbol
VDD1, 2, 3, 4
VAGC
VSW
Ratings
Unit
V
5.0
5.0
V
5.0
0
V
Pin1
dBm
dBm
mW
°C
Pin2
0
PD
140Note
−30 to +90
−40 to +150
Operating Ambient Temperature
Storage Temperature
TA
Tstg
°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
2
Data Sheet PG10340EJ01V0DS
µPG2137T5A
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Operating Frequency 1
Operating Frequency 2
Supply Voltage1, 3
Symbol
fopt1
MIN.
893
1 429
2.55
3.0
0.5
0
TYP.
−
MAX.
960
Unit
MHz
MHz
V
fopt2
−
1 453
2.85
4.3
VDD1, 3
VDD2, 4
VAGC
VSW
2.7
3.2
−
Supply Voltage2, 4
V
Gain Control Voltage
Switch Control Voltage
Input Power 1 (1 pin)
Input Power 2 (15 pin)
2.5
V
−
2.85
−10
V
Pin1
−
−17
−20
dBm
dBm
Pin2
−
−10
ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD1, 3 = 2.7 V, VDD2, 4 = 3.2 V, π/4DQPSK modulated
signal input, with external input and output matching, unless otherwise specified)
0.8 GHz Band side
Parameter
Operating Frequency 1
Circuit Current 1
Symbol
fopt1
Test Conditions
MIN.
893
−
TYP.
−
MAX.
960
35
Unit
MHz
mA
dB
IDD1
Pin = −17 dBm, VAGC = 2.5 V
Pin = −17 dBm, VAGC = 2.5 V
Pin = −17 dBm, VAGC = 0.5 V
28
Power Gain 1
GP1
25
−
27
−
Power Gain 2
GP2
−13
−60
−10
−55
dB
Adjacent Channel Power Leakage 1
Padj1
Pout = +11 dBm, VAGC = 2.5 V,
−
dBc
∆f = ±50 kHz, 21 kHz Bandwidth
Adjacent Channel Power Leakage 2
Noize Figure 1
Padj2
NF1
Pout = +11 dBm, VAGC = 2.5 V,
−
−
−70
−65
dBc
dB
∆f = ±100 kHz, 21 kHz Bandwidth
3
−
1.5 GHz Band side
Parameter
Operating Frequency 2
Circuit Current 2
Symbol
fopt2
Test Conditions
MIN.
TYP.
−
MAX.
1 453
40
Unit
MHz
mA
dB
1 429
IDD2
Pin = −20 dBm, VAGC = 2.5 V
Pin = −20 dBm, VAGC = 2.5 V
Pin = −20 dBm, VAGC = 0.5 V
−
28
−
33
Power Gain 3
GP3
30
−
Power Gain 4
GP4
−10
−60
−7
dB
Adjacent Channel Power Leakage 3
Padj3
Pout = +11 dBm, VAGC = 2.5 V,
−
−55
dBc
∆f = ±50 kHz, 21 kHz Bandwidth
Adjacent Channel Power Leakage 4
Noize Figure 2
Padj4
NF2
Pout = +11 dBm, VAGC = 2.5 V,
−
−
−70
−65
dBc
dB
∆f = ±100 kHz, 21 kHz Bandwidth
5
−
3
Data Sheet PG10340EJ01V0DS
µPG2137T5A
0.8 GHz/1.5 GHz Band
Parameter
Symbol
IAGC
Test Conditions
MIN.
TYP.
MAX.
300
Unit
Gain Control Current
VDD1, 3 = 2.7/0 V, VDD2, 4 = 3.2/0 V,
VAGC = 0.5/2.5 V
−200
−
µA
Switch Control Current
ISW
VSW = 2.7/0 V
−10
−
100
µA
4
Data Sheet PG10340EJ01V0DS
µPG2137T5A
EVALUATION CIRCUIT
(fopt1 = 893 to 960 MHz, fopt2 = 1 429 to 1 453 MHz, VDD1, 3 = 2.7 V, VDD2, 4 = 3.2 V)
VDD3
VDD4
22 nF
1 nF
INPUT2
V
AGC
5.6 nH
3.3 nH
8.2 nH
OUTPUT3
VSW
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
12 nH
10 nH
OUTPUT2
OUTPUT1
INPUT1
22 nF
1 nF
VDD1
VDD2
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
5
Data Sheet PG10340EJ01V0DS
µPG2137T5A
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Vd1/1.5G
Vd2/1.5G
V2049kai / 16pinTSON
Ver.02 / polyimide
OUT/1.5G
IN1/1.5G
Vsw2
C3
C4
L3
L5
L4
2137
L2
L1
Vagc
C1
OUT2/800M
C2
IN/800M
OUT1/800M
Vd1/800M
Vd2/800M
USING THE NEC EVALUATION BOARD
Symbol
Values
12 nH
10 nH
8.2 nH
3.3 nH
5.6 nH
22 nF
1 nF
L1
L2
L3
L4
L5
C1, C4
C2, C3
6
Data Sheet PG10340EJ01V0DS
µPG2137T5A
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
0.8 GHz Band side (INPUT1 − OUTPUT1, f = 960 MHz, VDD1 = 2.7 V, VDD2 = 3.2 V, VSW = 0 V)
CIRCUIT CURRENT1, OUTPUT POWER,
ADJACENT CHANNEL POWER LEAKAGE1, 2
vs. INPUT POWER
CIRCUIT CURRENT1, OUTPUT POWER,
ADJACENT CHANNEL POWER LEAKAGE1, 2
vs. GAIN CONTROL VOLTAGE
50
45
40
35
30
25
20
15
10
5
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
40
35
30
25
20
15
10
5
0
0
–5
V
AGC = 2.5 V
P
in = –17 dBm
I
DD1
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
∆
∆
∆
∆
I
DD1
P
out
P
adj1
–5
P
out
–10
–15
–20
–25
–30
Padj2
P
P
adj1
adj2
0
–5
–10
–75
–80
0
–75
–80
3.0
–35
–40
–30
–25
–20
–15
–10
–5
0
0.5
1.0
1.5
2.0
2.5
Input Power Pin (dBm)
Gain Control Voltage VAGC (V)
0.8 GHz Band side (INPUT1 − OUTPUT2, f = 960 MHz, VDD1 = 2.7 V, VDD2 = 3.2 V, VSW = VDD1)
CIRCUIT CURRENT1, OUTPUT POWER,
ADJACENT CHANNEL POWER LEAKAGE1, 2
vs. INPUT POWER
CIRCUIT CURRENT1, OUTPUT POWER,
ADJACENT CHANNEL POWER LEAKAGE1, 2
vs. GAIN CONTROL VOLTAGE
50
45
40
35
30
25
20
15
10
5
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
40
35
30
25
20
15
10
5
0
0
–5
V
AGC = 2.5 V
P
in = –17 dBm
I
DD1
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
∆
∆
∆
∆
P
out
I
DD1
P
adj1
–5
–10
–15
–20
–25
–30
P
out
P
adj2
P
P
adj1
adj2
0
–5
–10
–30
–75
–80
0
–35
–40
–75
–80
3.0
–25
–20
–15
–10
–5
0
0.5
1.0
1.5
2.0
2.5
Input Power Pin (dBm)
Gain Control Voltage VAGC (V)
7
Data Sheet PG10340EJ01V0DS
µPG2137T5A
1.5 GHz Band side (INPUT2 − OUTPUT3, f = 1 453 MHz, VDD3 = 2.7 V, VDD4 = 3.2 V)
CIRCUIT CURRENT2, OUTPUT POWER,
ADJACENT CHANNEL POWER LEAKAGE3, 4
vs. INPUT POWER
CIRCUIT CURRENT2, OUTPUT POWER,
ADJACENT CHANNEL POWER LEAKAGE3, 4
vs. GAIN CONTROL VOLTAGE
60
55
50
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
40
35
30
25
20
15
10
5
0
5
–10
–15
–20
–25
–30
0
–5
P
in = –20 dBm
V
AGC = 2.5 V
I
DD2
I
DD2
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
P
adj3
∆
∆
∆
∆
45
40
35
30
25
20
15
10
P
out
P
P
adj4
out
P
adj3
adj4
5
0
–30
–75
–80
0
–35
–40
–75
–80
3.0
P
–25
–20
–15
–10
–5
0
0.5
1.0
1.5
2.0
2.5
Input Power Pin (dBm)
Gain Control Voltage VAGC (V)
Remark The graphs indicate nominal characteristics
8
Data Sheet PG10340EJ01V0DS
µPG2137T5A
PACKAGE DIMENSIONS
16-PIN PLASTIC TSON (UNIT: mm)
3.5±0.15
3.3±0.1
0.16±0.05
0.4±0.05
(Bottom View)
(0.55)
(2.2)
Remark ( ) : Reference value
9
Data Sheet PG10340EJ01V0DS
µPG2137T5A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Condition Symbol
IR260
Peak temperature (package surface temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
VP215
WS260
HS350
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Wave Soldering
Partial Heating
Peak temperature (molten solder temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
: 0.2%(Wt.) or below
Maximum chlorine content of rosin flux (% mass)
Caution Do not use different soldering methods together (except for partial heating).
10
Data Sheet PG10340EJ01V0DS
µPG2137T5A
•
The information in this document is current as of March, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
11
Data Sheet PG10340EJ01V0DS
µPG2137T5A
This product uses gallium arsenide (GaAs).
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk
NEC Electronics (Europe) GmbH
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302-1
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