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元器件品牌
2SC3582
[NEC]
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR; 微波低噪声放大器NPN硅外延型晶体管
元器件型号：
2SC3582
生产厂家：
NEC
描述和应用：
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
微波低噪声放大器NPN硅外延型晶体管
晶体 放大器 晶体管 微波
PDF文件：
总8页 (文件大小：101K)
下载文档：
下载PDF数据表文档文件
型号参数：2SC3582参数
查看货源
2SC3582(NE68132)
Discrete
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ETC
2SC3582K
BJT
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NEC
2SC3582-K
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, PA33, SC-43B, 3 PIN
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NEC
2SC3582-K
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, PA33, SC-43B, 3 PIN
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0
NEC
2SC3582-K-A
暂无描述
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NEC
2SC3582-K-A
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PA33, SC-43B, 3 PIN
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0
NEC
2SC3582-T
TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),TO-92
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0
RENESAS
2SC3582-TK
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PA33, SC-43B, 3 PIN
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0
NEC
2SC3582-TK-A
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, PA33, SC-43B, 3 PIN
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-
0
NEC
2SC3582-TK-A
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, PA33, SC-43B, 3 PIN
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-
0
NEC
2SC3583
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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173
NEC
2SC3583
NPN Silicon Epitaxial Transistor
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41
KEXIN
2SC3583
NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz
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TYSEMI
2SC3583
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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RENESAS
2SC3583
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
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2
NEC
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