10PT08G [NELLSEMI]
Stansard SCRs, 10A; Stansard可控硅， 10A
| 型号： | 10PT08G |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Stansard SCRs, 10A |
| 文件： | 总5页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
10PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 10A
Main Features
2
2
Symbol
Value
10
Unit
IT(RMS)
A
2
1
1
3
2
VDRM/VRRM
IGT
V
600 to 1000
15
3
TO-251 (I-PAK)
TO-252 (D-PAK)
mA
(10PTxxF)
(10PTxxG)
2
DESCRIPTION
The 10PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
1
1
2
2
3
3
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
(10PTxxAI)
(10PTxxA)
2
(A2)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=100°C
Tc=90°C
Tc=100°C
TO-251/TO-252/TO-220AB
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
A
10
TO-220AB insulated
TO-251/TO-252/TO-220AB
Average on-state current
(180° conduction angle)
IT(AV)
6.4
A
TO-220AB insulated
F =50 Hz
Tc=90°C
t = 20 ms
100
105
50
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
dI/dt
IGM
Tj = 125ºC
50
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Peak gate current
4
10
1
A
Maximum gate power
PGM
W
W
PG(AV)
Average gate power dissipation
Repetitive peak off-state voltage
VDRM
VRRM
Tstg
600 to 1000
V
Tj =125ºC
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
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Page 1 of 5
RoHS
10PT Series RoHS
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC, unless otherwise specified)
10PTxxxx
SYMBOL
Unit
TEST CONDITIONS
IGT
15
mA
V
Max.
Max.
VD = 12V, RL = 30Ω
VGT
1.3
VD = VDRM, RL = 3.3KΩ
RGK = 220Ω, Tj = 110°C
VGD
Min.
0.2
V
IH
IL
IT = 100mA, Gate open
IG = 1.2 × IGT
Max.
Min.
Min.
30
50
mA
mA
V/µs
VD = 67% VDRM Gate open, Tj = 110°C
,
dV/dt
VTM
200
1.6
10
2
Tj = 25°C
Tj = 25°C
Tj = 110°C
IT = 20A, tP = 380 µs
Max.
Max.
Max.
V
µA
mA
IDRM
IRRM
VD=VDRM, VR=VRRM
RGK = 220Ω
VD = 67% VDRM ITM = 12A, VR = 25V
,
dITM = 30A/µs, dVD/dt = 50V/µs
Tj = 110°C
70
TYP.
tq
µS
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
UNIT
Rth(j-c)
Junction to case (DC)
Junction to ambient
°C/W
2.5
IPAK/DPAK/TO-220AB
70
100
60
DPAK
S=0.5 cm²
°C/W
Rth(j-a)
IPAK
TO-220AB
S=Copper surface under tab
PRODUCT SELECTOR
PART NUMBER
VOLTAGE (xx)
PACKAGE
SENSITIVITY
600 V
800 V
1000 V
V
V
V
V
V
V
V
V
10PTxxA/10PTxxAl
10PTxxF
15 mA
15 mA
15 mA
TO-220AB
I-PAK
10PTxxG
D-PAK
V
ORDERING INFORMATION
,
WEIGHT
PACKAGE
ORDERING TYPE
10PTxxA
MARKING
10PTxxA
BASE Q TY DELIVERY MODE
2.0g
2.3g
TO-220AB
50
50
Tube
Tube
10PTxxAI
10PTxxAI
TO-220AB (insulated)
10PTxxF
10PTxxG
10PTxxF
10PTxxG
0.40g
0.38g
TO-251(I-PAK)
TO-252(D-PAK)
80
80
Tube
Tube
Note: xx = voltage
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Page 2 of 5
RoHS
10PT Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
10 PT 06
Current
10 = 10A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (IPAK)
G = TO-252 (DPAK)
Fig.1 Maximum average power dissdipation
versus average on-state current
Fig.2 Correlation between maximum average
power dissipation and maximum
allowable temperature(Tamb and Tlead
)
P(W)
P(W)
Tlead(°C)
=0 C/W
12
10
12
10
8
R
=4 C/W
R
=2 C/W
R
R
=6 C/W
th
th
th
th
α=180°
α=180°
DC
100
105
110
α=120°
α=90°
8
6
4
α=60°
6
α=30°
4
115
120
125
360
2
0
2
0
I
(A)
5
α
Tamb( C)
80
60
T(AV)
6
7
8
9
0
20
40
100
120
140
0
1
2
3
4
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Page 3 of 5
RoHS
10PT Series RoHS
SEMICONDUCTOR
Fig.4 Relative variation of thermal impedance
versus pulse duration
Fig.3 Average on-state current versus case
temperature
K=[Zth(j-c)/Rth(j-c)
]
IT(AV)(A)
12
10
8
1
Z
th(j-c)
DC
TO-251/TO-252
TO-220AB
α=180°
Z
th(j-a)
6
4
2
0
0.1
TO-220AB
Insulated
T
(°C)
t
(s)
case
p
0.01
1E-3
0
20 30 40 50 60 70 80 90 100 110 120 130
1E+0
5E+2
10
1E-2
1E-1
1E+1
1E+2
Fig.5 Relative variation of gate trigger current
versus junction temperature
Fig.6 Surge peak on-state current versus number
of cycles
ITSM(A)
IGT,IH,IL[T ] / IGT,IH,IL[T =25°C]
j
j
2.5
120
100
2
1.5
1
tp=10ms
One cycle
80
60
40
IGT
Tj inital=25°C
IH&IL
0.5
0
20
0
Number of cycles
T (°C)
j
1000
1
10
100
0
50
-40 -30 -20 -10
10 20 30 40
60 70 80
90
100 110
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms,
and corresponding values of l²t
Fig.8 On-state characteristics (maximum values)
ITM(A)
ITSM(A),I²t(A²s)
1000
100
10
Tj inital=25 C
T
j=max
ITSM
100
I²t
T
j=25°C
T
j=max
Vt0=0.82V
Rd=24mΩ
t
(ms)
VTM(V)
p
10
1
1
2
10
0
1
2
3
4
5
5
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Page 4 of 5
RoHS
10PT Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
2
8.89 (0.350)
8.38 (0.330)
1
3
4.06 (0.160)
29.16 (1.148)
28.40 (1.118)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-251
(I-PAK)
6.6(0.26)
6.4(0.52)
2.4(0.095)
2.2(0.086)
1.5(0.059)
0.62(0.024)
0.48(0.019)
5.4(0.212)
5.2(0.204)
1.37(0.054)
6.2(0.244)
6(0.236)
4T
16.3(0.641)
15.9(0.626)
RoHS
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.65(0.026)
0.55(0.021)
0.76(0.03)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
1
2
3
0.89(0.035)
0.64(0.025)
0.62(0.024)
0.45(0.017)
1.14(0.045)
0.76(0.030)
2.28(0.090)
2
(A2)
4.57(0.180)
(G)3
1(A1)
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Page 5 of 5
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