1PT08E-08 [NELLSEMI]
Sensitive gate SCRs, 1A; 敏感栅可控硅, 1A型号: | 1PT08E-08 |
厂家: | NELL SEMICONDUCTOR CO., LTD |
描述: | Sensitive gate SCRs, 1A |
文件: | 总4页 (文件大小:188K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
RoHS
1PT Series
SEMICONDUCTOR
Sensitive gate SCRs, 1A
Main Features
Symbol
Value
1
Unit
IT(RMS)
A
VDRM/VRRM
IGT
V
600 to 800
40 to 200
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the 1PT
series is suitable for all applications where the available
gate current is limited, such as capacitive discharge
A2
TO-92
G
A1
ignitions, motor control in kitchen aids, overvoltage
crowbar protection in low power supplies among others.
(1PTxxE)
2
(A2)
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Tc =85ºC
Tc =85ºC
1
A
Average on-state current
(180° conduction angle)
IT(AV)
0.6
A
F =50 Hz
F =60 Hz
t = 20 ms
t = 16.7 ms
tp = 10 ms
12
13
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
I2t Value for fusing
A2s
A/µs
I2t
0.72
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
50
F = 60 Hz
Tp = 20 µs
Tj = 110ºC
Tj = 110ºC
IGM
PGM
0.5
0.5
A
Peak gate current
W
W
TA=25°C, Pulse width≤0.1µs
Forward peak gate power
Average gate power dissipation
Repetitive peak off-state voltage
PG(AV)
VDRM
VRRM
Tstg
Tj =110ºC
0.1
Tj =25ºC
600 and 800
V
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 110
ºC
Tj
Operating junction temperature range
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Page 1 of 6
RoHS
RoHS
1PT Series
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
1PTxxxx
SYMBOL
Unit
TEST CONDITIONS
10
200
0.8
Min.
Max.
Max.
IGT
µA
V
VD = 12V, RL = 100Ω
VGT
VD = VDRM, RL = 3.3KΩ
RGK = 1KΩ, Tj = 110°C
VGD
Min.
0.2
V
IH
IL
IT = 50mA, RGK = 1KΩ
IG = 1mA, RGK = 1KΩ
Max.
Min.
5
6
mA
mA
V/µs
VD = 67% VDRM RGK = 1KΩ, Tj = 110°C
,
dV/dt
VTM
Min.
Max.
Max.
10
1.6
5
Tj = 25°C
Tj = 25°C
Tj = 110°C
IT = 1A, tP = 380 µs
V
µA
mA
IDRM
IRRM
VD=VDRM, VR=VRRM
RGK = 220Ω
Max.
Max.
Max.
0.1
V
Threshold voltage
Dynamic resistance
Tj = 110°C
Tj = 110°C
0.85
60
V
to
R
d
MΩ
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
UNIT
°C/W
°C/W
Rth(j-c)
Rth(j-a)
Junction to case (AC)
75
TO-92
TO-92
Junction to ambient (DC)
150
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
PACKAGE
800 V
600 V
V
V
10~30 µA
20~50 µA
30~60 µA
50~80 µA
70~200 µA
TO-92
TO-92
1PTxxE03
1PTxxE-05
1PTxxE-06
V
V
V
V
TO-92
TO-92
TO-92
V
V
1PTxxE-08
1PTxxE-S
V
V
ORDERING INFORMATION
,
WEIGHT
PACKAGE
DELIVERY MODE
ORDERING TYPE
1PTxxE-yy
MARKING
1PTxxE-yy
BASE Q TY
0.23g
TO-92
500
Bag
Note: xx = voltage, y = sensitivity
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Page 2 of 6
RoHS
RoHS
1PT Series
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
-
E
T
1 PT 06
Current
1 = 1A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
Package type
E = TO-92
IGT Sensitivity
03 = 10~30 µA
05 = 20~50 µA
06 = 30~60 µA
08 = 50~80 µA
S = 70~200 µA
Fig.1 Maximum power dissipation versus RMS
on-state current (full cycle)
Fig.2 RMS on-state current versus case
temperature (full cycle)
IT(RMS)(A)
P(W)
5
1.0
0.8
0.6
0.4
4
3
2
1
0.2
0
IT(RMS)(A)
TC(°C)
0
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
Fig.4 Surge peak on-state current versus number
of cycles
Fig.3 On-state characteristics (maximum values)
ITM(A), I²t(A²s)
10
ITSM(A)
20
t=10ms
Half cycle
18
Tjmax
Vto=0.85V
Rd=60mΩ
16
12
10
Non repetltlve
Tj lntla=25°C
1.0
Tj=Tjmax
8
Tj=25°C
6
4
2
V
(V)
TM
Number of cycles
0.1
0
1000
0
0.5
1.0
1.5
2.0
2.5
1
10
100
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Page 3 of 6
RoHS
RoHS
1PT Series
SEMICONDUCTOR
Fig.5 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms,
and corresponding value of l²t
Fig.6 Relative variation of gate trigger current,
holding current and latching current
versus junction temperature (typical values)
IGT,IH,IL[T]/IGT,IH,IL[T]=25°C
l
(A), I²t (A²s)
TSM
6.0
5.0
100
Tj lntlal=25°C
dl/dt≤50A/μS
4.0
3.0
2.0
lGT
ITSM
10
IH&IL
Tj(°C)
1.0
0.0
t=10ms
Half cycle
1
0.01
0.1
1.0
10.0
-40 -20
0
20
40
60
80 100 120 140
Case Style
TO-92
RoHS
Ø 5.20(0.205)
4.45(0.175)
5.33(0.210)
4.58(0.180)
1
2
3
0.50(0.020)
0.40(0.016)
12.70(0.500)Min.
0.50(0.020)
0.40(0.016)
0.50(0.020)
0.40(0.016)
1.40(0.055)
1.14(0.045)
1.40(0.055)
1.14(0.045)
4.20(0.165)
3.20(0.126)
Page 4 of 6
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