300DR [NELLSEMI]
Standard Recovery Diodes;
| 型号： | 300DR |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Standard Recovery Diodes |
| 文件： | 总7页 (文件大小：3329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
300D(R)Series
SEMICONDUCTOR
Nell High Power Products
Standard Recovery Diodes
Stud Version, 300A
FEATURES
Alloy diode
Popular series for rough service
Ceramic housing
Stud cathode and stud anode version
RoHS compliant
Designed and qualified for industrial level
TYPICAL APPLICATIONS
Glass-metal seal
Welders
Power supplies
Motor controls
Battery chargers
General industrial current rectification
Glass-metal seal (Metric stud)
DO-205AB(DO-9)
PRODUCT SUMMARY
IF(AV)
300A
MAJOR RATINGS AND CHARACTERISTICS
300D(R)
04 TO 12
PARAMETER
TEST CONDITIONS
UNIT
16 TO 20
300
A
TC
IF(AV)
ºC
130
110
50 HZ
6050
6330
183
IFSM
A
60 HZ
50 HZ
60 HZ
kA2s
I2t
VRRM
TJ
166
Range
400 to 1200
1600 to 2000
V
ºC
-40 to 175
-40 to 150
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
lRRM, MAXIMUM
TYPE
NUMBER
VOLTAGE
CODE
NON-REPETITIVE
AT TJ = 175 °C
PEAK REVERSE VOLTAGE
V
mA
500
700
04
06
08
400
600
800
900
300D( R )
40
1200
12
16
20
1300
1700
2100
1600
2000
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Page 1 of 7
RoHS
RoHS
300D(R)Series
SEMICONDUCTOR
Nell High Power Products
FORWARD CONDUCTION
300D(R)
300
PARAMETER
SYMBOL
UNIT
A
TEST CONDITIONS
Maximum average forward current
at maximum case temperature
IF(AV)
180° conduction, half sine wave
130/110
6050
ºC
t = 10ms
No voltage
reapplied
Maximum peak, one cycle forward,
non-reptitive surge current
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
6330
5080
IFSM
A
100%VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5311
183
166
129
117
No voltage
reapplied
kA2s
I2t
Maximum l²t for fusing
100%VRRM
reapplied
t = 8.3ms
I2√t
kA2√s
t = 0.1 ms to 10 ms, no voltage reapplied
Maximum l²√t for fusing
1830
V
Maximum value of threshold voltage
F(TO)
0.610
0.751
1.40
V
mΩ
V
TJ = TJ Maximum
r
Maximum value of forward slope resistance
Maximum forward voltage drop
F
VFM
lpk = 942A, TJ = 25°C
FORWARD CONDUCTION
300D(R)
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
04 TO 12 16 TO 20
Maximum junction operating and
storage temperature range
TJ, Tstg
- 40 to175 - 40 to150
ºC
Maximum thermal resistace,
junction to case
RthJC
DC operation
0.18
0.08
K/W
Maximum thermal resistance
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
Ceramic housing
37
28
Maximum allowable mounting torque
Nm
g
(+0% , -20%)
228
203
Approximate weight
Case style
Glass-metal seal
(JEDEC) see dimensions -
link at the end of datasheet
DO-205AB (DO-9)
RthJC CONDUCTION
RECTANGULAR CONDUCTION
UNITS
TEST CONDUCTIONS
SINUSOIDAL CONDUCTION
CONDUCTION ANGEL
180°
120°
90°
60°
30°
0.015
0.020
0.024
0.031
0.045
0.077
0.025
0.034
0.047
0.077
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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Page 2 of 7
RoHS
RoHS
300D(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.1 Current ratings characteristics
Fig.2 Current ratings characteristics
200
180
160
200
RthJC(DC) = 0.18 K/W
Conduction Angle
RthJC(DC) = 0.18 K/W
190
180
170
Conduction Period
160
150
140
30°
140
120
60°
130
30°
90°
120°
60°
90°
120°
120
110
180°
180°
400
Average forward current (A)
DC
0
50 100 150 200 250 300 350
0
100
200
300
500
Average forward current (A)
Fig.3 Forward power loss characteristics
400
350
300
250
200
150
100
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
T
= 175°C
50
0
J
0
50 100 150 200 250 300 350 50 75 100 125 150 175 200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.4 Forward power loss characteristics
500
450
400
350
300
250
DC
180°
120°
90°
60°
30°
RMS Limit
200
150
100
Conduction Period
T
= 175°C
400
J
50
0
0
100
200
300
500 50 75 100 125 150 175 200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
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Page 3 of 7
RoHS
RoHS
300D(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.5 Maximum non-repetitive surge current
Fig.6 Maximum non-repetitive surge current
7000
6500
6000
At any rated load condition and with
rated vrrm applied following surge.
Maximum non repetitive surge current
versus pulse train duration.
5500
lnitial T =175°C
lnitial T = 175°C
J
J
6000
5000
4500
4000
3500
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
no voltage reapplied
rated vrrm reapplied
5500
5000
4500
4000
3500
3000
2500
3000
2500
2000
1500
2000
1500
0.01
0.1
1
1
10
100
Pulse train duration (S)
Number of equal amplitude half cycle
current pulses(N)
Fig.7 Forward voltage drop characteristics
Fig.8 Thermal lmpedance ZthJC characteristic
1
0.1
10000
Stead State Value
RthJC = 0.18K/W
(DC Operation)
1000
T
= 25°C
J
T
= 200°C
0.01
0.001
J
100
10
0.0001
0.001
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
3
Instantaneous forward voltage (V)
Square wave pulse duration (S)
ORDERING INFORMATION TABLE
Device code
300
D
R
04
B
M
3
1
4
5
2
5
-
-
-
Current rating, 300 = 300A
1
D = Standard Recovery Diode
2
3
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
-
-
Voltage code × 100 = VRRM (see Voltage Ratings table)
None = DO-9, Ceramic housing type with insulated tube
4
5
B = DO-9, Glass-Metal Seal Type
-
None = standard device, 3/4”-16UNF-2A
6
M = Metric device, M20 x 1.5 , with insulated tube
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Page 4 of 7
RoHS
RoHS
300D(R)Series
SEMICONDUCTOR
Nell High Power Products
DO-205AB (DO-9), Ceramic housing
Red silicon rubber tube
Black for 300D
Red for 300DR
Shrinking Tube (
)
300D
300D(R)
AII dimensions in millimeters (inches)
www.nellsemi.com
Page 5 of 7
RoHS
RoHS
300D(R)Series
SEMICONDUCTOR
Nell High Power Products
DO-205AB (DO-9), GLASS - METAL SEAL
300D
300D(R)
AII dimensions in millimeters (inches)
www.nellsemi.com
Page 6 of 7
RoHS
RoHS
300D(R)Series
SEMICONDUCTOR
Nell High Power Products
DO-205AB (DO-9), GLASS - METAL SEAL (Metric stud)
Red silicon rubber tube
Black for 300D
Red for 300DR
Shrinking Tube (
)
300D
300D(R)
AII dimensions in millimeters (inches)
www.nellsemi.com
Page 7 of 7
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