40FDR12 [NELLSEMI]
Fast Recovery Diodes;
| 型号： | 40FDR12 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Fast Recovery Diodes |
| 文件： | 总6页 (文件大小：617K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
40FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fast Recovery Diodes
(Stud Version), 40A
Available
RoHS*
COMPLIANT
FEATURES
Short reverse recovery time
Low stored charge
Wide current range
Excellent surge capabilities
Stud cathode and stud anode versions
Voltage up to 1200 VRRM
Compliant to RoHS
TYPICAL APPLICATIONS
DC power supplies
lnverters
Converters
Choppers
DO-203AB(DO-5)
Ultrasonic systems
Freewheeling diodes
PRODUCT SUMMARY
IF(AV)
40A
MAJOR RATINGS AND CHARACTERISTICS
40FD(R)
SYMBOL
CHARACTERISTICS
UNIT
40
85
A
IF(AV)
Maximum TC
ºC
50 HZ
475
500
1128
IFSM
I2t
A
60 HZ
50 HZ
60 HZ
A2s
1038
I2√t
VRRM
trr
I2√s
11281
200 to 1200
Range
Range
V
See Recovery Characteristics table
-40 to 125
ns
ºC
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
IFM, MAXIMUM PEAK REVERSE
CURRENT AT RATED VRRM
mA
VRRM, MAXIMUM
VRSM, MAXIMUM PEAK
NON-REPETITIVE
TYPE
NUMBER
VOLTAGE
CODE
PEAK REPETITIVE
REVERSE VOLTAGE
TJ = -40°C TO 125°C
REVERSE VOLTAGE
TJ = 25°C TO 125°C
TJ = 25°C
TJ = 125°C
V
V
02
04
06
08
200
400
600
800
300
500
700
900
0.1
10
40FD(R)
10
1000
1200
1100
1300
12
Page 1 of 6
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RoHS
40FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
FORWARD CONDUCTION
40FD(R)
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
40
A
Maximum average forward current
at maximum case temperature
IF(AV)
180° conduction, half sine wave
ºC
A
85
63
IF(RMS)
IFRM
Maximum RMS forward current
Maximum peak repetitive forward current
220
400
Sinusoidal half wave, 30° conduction
t = 10ms
A
Sinusoidal half wave, 100% VRRM
Maximum peak, one-cycle
non-reptitive surge current
reapplied, initial TJ =TJ maximum
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
420
475
IFSM
A
Sinusoidal half wave, no voltage
reapplied, initial TJ =TJ maximum
500
800
732
1128
1038
100% VRRM reapplied,
initial TJ =TJ maximum
A2s
Maximum l²t for fusing
I2t
no voltage reapplied,
initial TJ =TJ maximum
t = 8.3ms
Maximum l²√t for fusing(1)
I2√t
A2√s
t = 0.1 ms to 10 ms, no voltage reapplied
11281
Maximum value of threshold voltage
V
1.081
6.33
1.95
V
mΩ
V
F(TO)
TJ = 125°C
r
Maximum value of forward slope resistance
Maximum forward voltage drop
F
VFM
TJ = 25°C; lFM = 125A
Note : (1) l2t for time tx =I2√t √tx
SWITCHING
40FD(R)
02 to 06 08 to 12
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
TJ = 25°C, IF = 0.5A, IR = 1.0A,
IRR = 250mA (RG#1 CKT)
200
500
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
Typical reverse recovery time
trr
ns
70
180
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
200
160
500
750
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
Typical reverse recovered charge
nC
Qrr
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
240
1300
Page 2 of 6
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RoHS
40FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
THERMAL AND MECHANICAL SPECIFCATIONS
40FD(R)
-40 to125
- 40 to150
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
Maximum junction operating
temperature range
TJ
ºC
Maximum storage temperature range
Tstg
Maximum thermal resistance,
junction to case
0.60
0.25
RthJC
RthCS
DC operation
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth, flat and greased
Not lubricated threads, tighting on nut(1)
Lubricated thread, tighting on nut (1)
Not lubricated threads, tighting on hexagon(2)
Lubricated thread, tighting on hexagon(2)
3.4(30)
2.3(20)
4.2(37)
3.2(28)
N · m
Maximum allowable mounting torque
(+0%, -10%)
(lbf · in)
g
oz.
25
0.88
Approximate weight
Case style
JEDEC
DO-203AB (DO-5)
Note : (1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
RthJC CONDUCTION
CONDUCTION ANGEL
40FD(R)
TEST CONDUCTIONS
UNITS
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180˚
120˚
60˚
0.03
0.14
0.15
0.31
0.52
0.14
0.30
0.50
TJ = 150°C
K/W
30˚
Note
• The table above shows the increment of thermal resistance RthJC when devices
operate at different conduction angles than DC
ORDERING INFORMATION SCHEME
40 FD R
06
A
Current
40 = 40A
Diode type
FD = Fast Recovery Diode
Polarity
R = Reverse, Anode on Stud
None = standard, Cathode on Stud
Voltage
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
Trr value
A = 200 ns Max.
B = 500 ns Max.
Page 3 of 6
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RoHS
40FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Reverse recovery time test waveform
l
F
d
lF
t
d
l
FM
t
rr
t
1/4 l
l
RM(REC)
RM(REC)
Q
RR
l
F
l ,l
F
= Peak forward current prior to commutation
FM
d
/d = Rate of fall of forward current
t
lF
l
= Peak reverse recovery current
RM(REC)
t
= Reverse recovery time
rr
Q
= Reverse recovered charge
RR
Fig.2 Current rating nomogram (Sinusoidal Waveforms)
70
40FD( R)Series
= 125°C
T
ø = 180°
120°
J
60
50
40
90°
60°
30°
180° 0.14
120° 0.15
90° 0.20
60° 0.31
30° 0.52
RMS Limit
30
20
10
0
Conduction Angle
0
5
10 15 20 25 30 35 40 10 20 30 40 50 60 70 80 90 100
Average forward current (A) Maximum allowable ambient temperature (°C)
Fig. 3 Current rating nomogram (Rectangular waveforms)
100
90
40FD(R)Series
T
= 125°C
J
80
70
ø = DC
180°
120°
60
60°
50
40
DC
0
RMS Limit
180° 0.08
120° 0.14
30
20
10
0
ø
Conduction Angle
60°
030
0
10
20
30 40
50
60 70 10 20 30 40 50 60 70 80 90 100
Maximum allowable ambient temperature (°C)
Average forward current (A)
Page 4 of 6
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RoHS
40FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig. 5 Maximum forward voltage vs. forward
current.
Fig .4 Maximum high level forward power
loss vs. average forward current
104
103
40FD(R)Series
40FD(R)Series
T
= 125°C
J
ø =180°
120°
60°
ø =DC
180°
120°
60°
30°
103
102
30°
T
= 125°C
J
102
10
10
1
T
= 25°C
J
102
Average forward current (A)
104
10
103
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous forward voltage (V)
Fig .7 Typical reverse recovery time vs.
rate of fall of forward current.
Fig.6 Average forward current vs. maximum
allowable case temperature.
125
1000
T
= 125°C
= 125A
= 20A
J
40FD(R)Series
l
l
F
F
600
500
400
300
110
ø =180°
l
= 1A
F
120°
60°
30°
100
200
90
T
l
= 25°C
J
= 125A
= 20A
= 1A
100
F
80
ø =180°
120°
90°
60°
l
l
F
F
60
50
40
30
70
30°
60
20
DC
50
40FD(R), 200 to 600V
10
40
0
1
3
10
30
100
10
20
30
40
50
60
70
Average forward current (A)
Rate of fall of forward current (A/µs)
Fig .9 Typical reverse recovery time vs.
rate of fall of forward current.
Fig .8 Typical recovered charge vs.
rate of fall of forward current.
104
40FD(R), 200 to 600V
40FD(R), 800 to 1200V
6000
5000
4000
103
102
3000
l
l
l
= 125A
= 20A
= 1A
F
F
F
T
l
= 125°C
= 125A
= 20A
J
2000
F
l
l
F
F
= 1A
1000
600
500
400
T
= 25°C
J
300
10
1
l
l
l
= 125A
= 20A
= 1A
F
F
F
200
100
1
3
10
30
100
1
3
10
30
100
Rate of fall of forward current (A/µs)
Rate of fall of forward current (A/µs)
Page 5 of 6
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RoHS
RoHS
40FD(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig .10 Typical recovered charge vs.
rate of fall of forward current.
105
104
103
l
l
= 125A
= 20A
F
F
l
= 1A
F
102
10
40FD(R), 800 to 1200V
1
3
10
30
100
Rate of fall of forward current (A/µs)
DO-203AB(DO-5)
19(0.75)
Ø15.2(Ø0.598) Max
Ø4.0(Ø0.157)
6.2/7.0
0.7/1.1
(0.24/0.28)
(0.028/0.043)
1/4” 28UNF-2A
For metric devices: M6x1.0
40FD(R)..
40FD..
AII dimensions in millimeters (inches)
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