4PT08AM-03 [NELLSEMI]
Sensitive gate SCRs;
| 型号： | 4PT08AM-03 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Sensitive gate SCRs |
| 文件： | 总7页 (文件大小：758K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
4PT Series
Sensitive gate SCRs, 4A
Main Features
A
A
Symbol
Value
Unit
I
A
K
T(RMS)
4
A
K
A
G
G
V
/V
DRM RRM
V
600 to 800
10 to 200
TO-251-4R (I-PAK)
TO-252-4R (D-PAK)
(4PTxxG)
I
µA
GT
(4PTxxF)
A
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the
available gate current is limited, such as motor
control for hand tools, kitchen aids, capacitive
discharge ignitions, overvoltage crowbar protection
for low power supplies among others.
K
K
A
G
A
G
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
(4PTxxAI)
(4PTxxA)
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
K
A
G
K
A
G
2(A)
TO-202-3
(4PTxxAT)
TO-126 (Non-lnsulated)
3(G)
(4PTxxAM)
1(K)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=115°C
TO-251-4R/TO-252-4R/TO-220AB
TO-220AB insulated
TO-126
Tc=110°C
Tc=95°C
Tc=60°C
Tc=115°C
Tc=110°C
Tc=95°C
Tc=60°C
t = 20 ms
t = 16.7 ms
RMS on-state current full sine wave
IT(RMS)
4
A
(180° conduction angle )
TO-202-3
TO-251-4R/TO-252-4R/TO-220AB
TO-220AB insulated
TO-126
Average on-state current
(180° conduction angle)
IT(AV)
2.5
A
TO-202-3
F =50 Hz
30
33
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
2
I t Value for fusing
2
I t
2
A s
tp = 10 ms
4.5
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
A/µs
dI/dt
TJ = 125ºC
50
IGM
TJ = 125ºC
Peak gate current
Tp = 20 µs
TJ =125ºC
1.2
0.2
A
PG(AV)
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
W
V
DRM
600 and 800
V
TJ =125ºC
V
RRM
T
stg
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
Page 1 of 7
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RoHS
4PT Series
(T = 25 ºC unless otherwise specified)
J
ELECTRICAL SPECIFICATIONS
4PTxxxx
SYMBOL
Unit
TEST CONDITIONS
Min.
Max.
Max.
10
200
0.8
IGT
µA
VD = 12V, RL = 30Ω
VGT
V
V
VGD
VD = VDRM, RL = 3.3KΩ, RGK = 220Ω, TJ = 125°C
IT = 50mA, RGK = 1KΩ
IG = 1mA, RGK = 1KΩ
Min.
0.1
5
I
H
Max.
Max.
Min.
mA
mA
V/µs
IL
6
VD = 67% VDRM RGK = 1KΩ, TJ = 125°C
,
dV/dt
VTM
IDRM
IRRM
10
1.6
5
IT = 8A, tP = 380 µs
VD=VDRM, VR=VRRM
RGK=1K
TJ = 25°C
TJ = 25°C
TJ = 125°C
Max.
Max.
Max.
V
µA
1
mA
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
2.8
70
UNIT
Rth(j-c)
Junction to case (DC)
IPAK/DPAK/TO-220AB/TO-126
TO-252-4R(D-PAK)
2
S = 0.5 cm
TO-220AB
60
°C/W
Rth(j-a)
Junction to ambient
TO-251-4R(I-PAK)/TO-126
100
15
Rth(j-l)
Junction to lead (DC)
TO-202-3
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
PACKAGE
600 V
V
800 V
70~200 µA
10~30 µA
20~50 µA
30~60 µA
50~80 µA
70~200 µA
10~30 µA
20~50 µA
30~60 µA
50~80 µA
70~200 µA
10~30 µA
20~50 µA
30~60 µA
50~80 µA
70~200 µA
10~30 µA
20~50 µA
30~60 µA
50~80 µA
10~30 µA
30~60 µA
50~80 µA
4PTxxA-S/4PTxxAl-S
4PTxxA-03/4PTxxAl-03
4PTxxA-05/4PTxxAl-05
4PTxxA-06/4PTxxAl-06
4PTxxA-08/4PTxxAl-08
4PTxxF-S
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
I-PAK
V
V
V
V
V
4PTxxF-03
V
I-PAK
4PTxxF-05
V
I-PAK
4PTxxF-06
V
I-PAK
4PTxxF-08
V
I-PAK
4PTxxG-S
V
D-PAK
4PTxxG-03
V
D-PAK
4PTxxG-05
V
D-PAK
4PTxxG-06
V
D-PAK
4PTxxG-08
V
D-PAK
4PTxxAM-S
V
TO-126
TO-126
TO-126
TO-126
TO-126
TO-202-3
TO-202-3
TO-202-3
4PTxxAM-03
V
4PTxxAM-05
V
4PTxxAM-06
V
4PTxxAM-08
V
4PTxxAT-03
V
4PTxxAT-06
V
4PTxxAT-08
V
Page 2 of 7
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RoHS
4PT Series
ORDERING INFORMATION
,
BASE Q TY
PACKAGE
WEIGHT
DELIVERY MODE
ORDERING TYPE
MARKING
4PTxxA-yy
4PTxxA-yy
2.0g
TO-220AB
50
Tube
TO-220AB (insulated)
4PTxxAI-yy
4PTxxAI-yy
2.3g
50
Tube
4PTxxF-yy
4PTxxF-yy
0.40g
TO-251-4R(I-PAK)
TO-252-4R(D-PAK)
80
Tube
4PTxxG-yy
4PTxxG-yy
0.38g
80
Tube
TO-126
4PTxxAM-yy
4PTxxAM-yy
0.75g
500
Bag
g
4PTxxAT-yy
4PTxxAT-yy
Bag
TO-202-3
500
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
-
S
4 PT 06
Current
4 = 4A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251-4R (I-PAK)
G = TO-252-4R (D-PAK)
AM = TO-126
AT = TO-202-3
IGT Sensitivity
03 = 10~30 µA
05 = 20~50 µA
06 = 30~60 µA
08 = 50~80 µA
S = 70~200 µA
Page 3 of 7
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RoHS
4PT Series
Fig.1 Maximum average power dissipation versus
Fig.2 Average and DC on-state current versus
case temperature
on-state current
IT(AV)(A)
P(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
4.0
3.5
α=180°
DC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TO-126
α=180°
TO-220AB
Insulated
TO-202-3
360°
TO-251-4R/TO-252-4R
TO-220AB
1.0
0.5
0.0
α
Tcase(°C)
75
IT(AV)(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
100
125
Fig.4 Relative variation of thermal impedance
junction to ambient versus pulse duration
(DPAK)
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
IT(AV)(A)
K=[Zth(j-c)/Rth(j-c)
]
1E+0
2.0
Device mounted on FR4 with
recommended pad layout
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Z
th(j-c)
DPAK (S = 0.5cm²)
DC
α=180°
1E-1
Z
th(j-a)
IPAK
1E-2
DC
α=180°
Device mounted on FR4 with
recommended pad layout
0.2
0.0
tp(s)
1E+0
Tamb(°C)
75
1E-3
1E-3
0
25
50
100
125
1E-2
1E-1
1E+1
1E+2
5E+2
Fig.5 Relative variation of gate trigger current
and holding current versus junction
temperature
Fig.6 Relative variation of holding current
versus gate-cathode resistance
(typical values)
IH[RGK] / IH[RGK=1KΩ]
IGT,IH,IL[TJ] / IGT,IH,IL[TJ=25°C]
5
2.0
TJ=25°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
4
IGT
l
IL
3
hand
R
=1KΩ
GK
2
0.4
1
0.2
0.0
TJ(°C)
RGK(KΩ)
0
1E-2
-40 -20
0
20
40
60
80
100 120 140
1E-1
1E+0
1E+1
Page 4 of 7
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RoHS
4PT Series
Fig.7 Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
Fig.8 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
dV/dt[RGK] / dV/dt[RGK=220Ω]
dV/dt[CGK] / dV/dt[RGK=220Ω]
10.00
1.00
0.10
0.01
10
T
=125°C
J
VD=0.67 X VDRM
8
VD=0.67 X VDRM
TJ=125°C
RGK=220Ω
6
4
2
RGK(KΩ)
C
(nF)
GK
0
0
200 400 600 800 1000 1200 1400 1600 1800 2000
0
2
4
6
8
10 12 14 16 18 20 22
Fig.9 Surge peak on-state current versus
number of ctcles
Fig.10 Non-repetitive surge peak on-state
current, and corresponding values
of l²t
ITSM(A)
ITSM(A),I²t(A²s)
300
35
30
25
20
15
10
5
Tj inital=25°C
dI/dt Iimitation
tp=10ms
One cycle
100
ITSM
Non repetitive
inital=25°C
J
T
10
Repetitive
Tc=115°C
I²t
Sinusoidal pulse with
width < 10ms
t (ms)
p
Number of cycles
100
0
1
1
10
1000
0.01
0.10
1.00
10.00
Fig.11 On-state characteristics (maximum
Fig.12 Thermal resistance junction to ambient
versus copper surface under tab (DPAK)
values)
ITM(A)
Rth(J-a)(°C/W)
100
80
60
40
20
0
50.0
Tjmax
Epoxy printed circuit board FR4
copper thickness = 35µm
Rd=90mΩ
Tt0=0.85V
10.0
T
=max
J
1.0
TJ = 25°C
0.1
S(cm²)
V
(V)
TM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
12
14
16
18
20
Page 5 of 7
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RoHS
4PT Series
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
K
A
G
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-251-4R
(I-PAK)
A
K
A
G
TO-252-4R
(D-PAK)
A
K
A
G
2(A)
3(G)
1(K)
Page 6 of 7
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RoHS
4PT Series
Case Style
TO-202-3
10.1 Max.
4.50
K
A
G
1.4 Max.
0.70
1.50
0.50
Max.
2.54 2.54
TO-126
7.5
2.5
3.8
3.1
10.8
2.54
15.9
1
2
3
0.76
0.5
2.29
4.58
1.2
2(A)
3(G)
1(K)
Page 7 of 7
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