60T [NELLSEMI]
TRIACs;
| 型号： | 60T |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | TRIACs 三端双向交流开关 |
| 文件： | 总4页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
60T Series RoHS
SEMICONDUCTOR
TRIACs, 60A
Snubberless
FEATURES
High current triac
Low thermal resistance with clip bonding
Low thermal resistance for TO-247S
(Super TO-247) package
High commutation capability
60T series are UL certified (File ref: E320098)
Packages are RoHS compliant
G
A2
APPLICATIONS
The snubberless concept offer suppression of RC
network and it is suitable for applications such as
on/off function in static relays, heating regulation,
induction motor starting circuits, phase control
operation in light dimmers, motor speed controllers,
and similar.
A1
2(A2)
TO-247S (non-Insulated)
3(G)
(60TxxD)
1(A1)
Due to their clip assembly technique, they provide
a superior performance in surge current handling
capabilities.
MAIN FEATURES
SYMBOL
VALUE
UNIT
A
IT(RMS)
60
VDRM/VRRM
IGT(Q1)
V
1000 to 1600
35 to 50
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(RMS)
TEST CONDITIONS
VALUE
UNIT
RMS on-state current (full sine wave)
Tc = 72ºC
60
A
A
F =50 Hz
F =60 Hz
= 10 ms
t = 10 ms
t = 8.3 ms
600
628
Non repetitive surge peak on-state
ITSM
current (full cycle, T initial = 25°C)
j
I2t Value for fusing
t = 10 ms
1800
100
I2t
A2s
t
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
F =120 Hz, IG = 2xIGT, t ≤ 100ns
A/µs
dI/dt
r
Tp =20 µs
Tp =20 µs
Tj =125ºC
Tj =125ºC
Tj =125ºC
Peak gate current
IGM
PGM
PG(AV)
Tstg
8
10
2
A
Peak gate power dissipation
Average gate power dissipation
Storage temperature range
Operating junction temperature range
W
- 40 to + 150
- 40 to + 125
ºC
Tj
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Page 1 of 4
RoHS
60T Series RoHS
SEMICONDUCTOR
(TJ= 25 ºC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
SNUBBERLESS and Logic level (3 quadrants)
60TxxD
Unit
SYMBOL
TEST CONDITIONS
QUADRANT
BW
(1)
I - II - III
I - II - III
IGT
mA
V
50
VD = 12 V, RL = 33Ω
MAX.
VGT
1.3
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
I - II - III
VGD
0.2
MIN.
MAX.
MAX.
V
(2)
IT = 500 mA
IH
mA
60
I - III
80
IG = 1.2 IGT
IL
mA
II
120
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
1000
22
MIN.
(dI/dt)c(2)
Without snubber, Tj = 125°C
A/ms
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.75
0.95
10
(2)
ITM = 90 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
20
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
mA
5
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
VALUE
0.48
40
UNIT
Rth(j-c)
Rth(j-a)
Junction to case (AC)
°C/W
TO-247S
Junction to ambient
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
1200 V
1600 V
60TxxD-BW
50 mA
Snubberless
TO-247S
V
V
V
ORDERING INFORMATION
,
BASE Q TY
ORDERING TYPE
MARKING
PACKAGE
TO-247S
WEIGHT
DELIVERY MODE
60TxxD-yy
60TxxD-yy
6.5g
30
Tube
Note: xx = voltage, yy = sensitivity
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Page 2 of 4
RoHS
60T Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
-
BW
60 T 12
D
Current
60 = 60A
Triac series
Voltage
10 = 1000V
12 = 1200V
16 = 1600V
Package type
D = TO-247S (non-insulated), Super TO-247
I
GT
Sensitivity
BW = 50mA Snubberless
Fig.1 Maximum power dissipation versus on-state RMS
current (full cycle)
Fig.2 On-state rms current versus case temperature
(full cycle)
P (W)
IT(RMS) (A)
80
70
α=180°
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
180°
α
IT(RMS)(A)
TC(°C)
α
0
10
20
30
40
50
60
0
25
50
75
100
125
Fig.3 On-state characteristics (maximum values).
Fig.4 Surge peak on-state current versus number
of cycles.
ITSM(A)
ITM(A)
700
600
500
400
300
200
100
0
1000
100
10
T max.
j
Non repetitive
T initial=25°C
j
V
= 0.95 V
T =25°C
j
to
R
= 10 mΩ
d
Repetitive
T =70°C
T =T max
j
j
c
Number of cycles
0
1
2
3
4
5
1
10
100
1000
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Page 3 of 4
RoHS
60T Series RoHS
SEMICONDUCTOR
Fig.6 Relative variation of gate trigger, holding
and latching current versus junction
temperature (typical values)
Fig.5 Non-repetitive surge peak on-state current
for a sinusoidal pulse and corresponding
value of l2t.
ITSM(A),l2t(A2s)
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
10000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tj initial =25°C
ITSM
dl/dt 1000 ≤ A/µs
lGT
I2t
1000
100
lH & lL
Tj(°C)
tp(ms)
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120
Case Style
TO-247S
5.5(0.216)
4.5(0.178)
16.1(0.632)
15.1(0.595)
2.4(0.095)
2(0.079)
2.15(0.084)
1.45(0.058)
20.8(0.818)
19.8(0.76)
2.8(0.110)
1.9(0.075)
14.8(0.582)
13.8(0.544)
4.0(0.157)
3.0(0.118)
0.8(0.032)
0.55(0.022)
1.5(0.059)
1.3(0.051)
3.35(0.132)
2.75(0.108)
5.8(0.228)
5.1(0.201)
5.8(0.228)
5.1(0.201)
2(A2)
1(A1)
3(G)
All dimensions in millimeters (inches)
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Page 4 of 4
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