85DR12M [NELLSEMI]
Glass Passivated Standard Recovery Diodes (Stud Version), 85A; 玻璃钝化标准恢复二极管（梭哈版） ， 85A
| 型号： | 85DR12M |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Glass Passivated Standard Recovery Diodes (Stud Version), 85A |
| 文件： | 总6页 (文件大小：576K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
85D(R)Series
SEMICONDUCTOR
Nell High Power Products
Glass Passivated Standard Recovery Diodes
(Stud Version), 85A
FEATURES
Glass passivated chips
High surge current capability
Stud cathode and stud anode version
Wide current range
Voltage up to 1600V VRRM
RoHS compliant
TYPICAL APPLICATIONS
Battery charges
Converters
Power supplies
Machine tool controls
Welder
DO-203AB(DO-5)
PRODUCT SUMMARY
IF(AV)
85A
MAJOR RATINGS AND CHARACTERISTICS
85D(R)
02 TO 12
PARAMETER
TEST CONDITIONS
UNIT
16
85
A
TC
IF(AV)
IF(RMS)
IFSM
ºC
140
110
A
A
133
50 HZ
1700
595
60 HZ
50 HZ
60 HZ
14450
13170
A2s
I2t
VRRM
TJ
Range
200 to 1200
1600
V
-65 to 180
-65 to 150
ºC
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM,MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM,MAXIMUM
VRRM,MAXIMUM
TJ-TJ=Maximum
mA
VOLTAGE
CODE
TYPE
NON-REPETITIVE
PEAK VOLTAGE
V
NUMBER
300
500
02
04
06
200
400
600
800
700
85D( R )
9
08
10
900
1100
1300
1700
1000
12
16
1200
1600
4.5
Page 1 of 6
RoHS
RoHS
85D(R)Series
SEMICONDUCTOR
Nell High Power Products
FORWARD CONDUCTION
85D(R)
UNIT
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
02 TO 12
16
A
ºC
A
85
Maximum average forward current
at case temperature
180° conduction, half sine wave
140
110
IF(RMS)
Maximum RMS forward current
133
1700
t = 10ms
No voltage
reapplied
Maximum peak, one-cycle forward,
non-reptitive surge current
t = 8.3ms
t = 10ms
t = 8.3ms
1800
1450
IFSM
A
100%VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
1500
14450
13170
10230
9340
t = 10ms
t = 8.3ms
t = 10ms
No voltage
reapplied
A2s
Maximum l²t for fusing
I2t
100%VRRM
reapplied
t = 8.3ms
A2√s
Maximum l²√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
144500
Maximum forward voltage drop
VFM
lpk = 267A, TJ = 25˚C, tp = 400µs rectangular wave
1.2
1.4
V
FORWARD CONDUCTION
85D(R)
02 TO 12
PARAMETER
SYMBOL
TJ
UNIT
TEST CONDITIONS
16
Maximum junction operating and
storage temperature range
- 65 to180 - 65 to150
0.35
ºC
Maximum thermal resistace,
junction to case
RthJC
DC operation
K/W
Maximum thermal resistance
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
Not lubricated thread ,tighting on nut (1)
Lubricated thread ,tighting on nut (1)
3.4(30)
N · m
(lbf · in)
Maximum allowable mounting torque
2.3(20)
4.2(37)
Not lubricated thread ,tighting on hexagon (2)
Lubricated thread ,tighting on hexagon (2)
(+0% , -10%)
N · m
(lbf · in)
3.2(28)
15
g
Approximate weight
Case style
0.53
oz.
See dimensions - link at the end of datasheet
DO-203AB (DO-5)
Note
(1) Recommended for pass-through holes.
(2) Recommended for holed threaded heatsinks.
RthJC CONDUCTION
RECTANGULAR CONDUCTION
UNITS
TEST CONDUCTIONS
SINUSOIDAL CONDUCTION
CONDUCTION ANGEL
180˚
120˚
90˚
0.08
0.10
0.11
0.13
0.17
0.26
0.11
0.13
0.17
0.26
TJ = TJ maximum
K/W
60˚
30˚
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Page 2 of 6
RoHS
RoHS
85D(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.1 Current Ratings Characteristics
Fig.2 Current Ratings Characteristics
180
170
160
150
150
85D(R) Series (200V to 1200V)
RthJC (DC) = 0.35 K/W
85D(R) Series (1600V)
RthJC (DC) = 0.35 K/W
140
130
120
Conduction Angle
Conduction Angle
30°
30°
60°
90°
60°
140
130
110
100
90°
120°
120°
180°
180°
70 80 90 100
Average Forward Current (A)
0
30
70 80 90 100
0
50 60
10 20
40 50 60
10 20 30 40
Average Forward Current (A)
Fig.3 Current Ratings Characteristics
Fig.4 Current Ratings Characteristics
180
150
85D(R) Series (200V to 1200V)
85D(R) Series (1600V)
RthJC (DC) = 0.35 K/W
RthJC (DC) = 0.35 K/W
170
140
130
Conduction Period
Conduction Period
160
150
140
130
120
110
100
30°
30°
60°
60°
90°
90°
120°
120°
180°
80 100 120 140
Average Forward Current (A)
DC
DC
180°
0
20
60
80
100
0
20
40
120 140
40
60
Average Forward Current (A)
Fig.5 Forward Power Loss Characteristics
90
80
70
60
180
120
90
°
0
.
7
1
°
K
/
K
R
t
1.5
/
W
W
h
K W
S
A
°
/
2
60
°
=
K W
/
0
.
30
°
5
K
/
W
-
RMS Limit
D
e
l
50
40
30
20
t
a
R
Conduction Angle
1
0
K
/
W
85D(R) Series
(200V to 1200V)
Tj = 180°C
10
0
0
10 20 30 40 50 60 70 80 90 20 40 60 80 100
120 140
160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Page 3 of 6
RoHS
RoHS
85D(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.6 Forward Power Loss Characteristics
120
100
80
DC
180°
120°
90°
0
.
7
1
K
/
K
/
W
W
1
.
5
60°
K
/
W
30°
2
K W
/
60
RMS Limit
3
K
/
W
Conduction Period
40
85D(R) Series
(200V to 1200V)
Tj = 180°C
10
K
/W
20
0
0
20
40
60
80
100
120 140 20 40 60 80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.7 Forward Power Loss Characteristics
100
90
180°
120°
90°
0
.
7
K
/
W
80
70
60
50
40
30
20
60°
30°
RMS Limit
3
K
/
W
Conduction Angle
85D(R) Series
(1600V)
10
0
Tj = 150°C
0
10 20 30
50 60 70 80 90
25
50
75
100
125
150
40
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.8 Forward Power Loss Characteristics
140
120
DC
180°
120°
90°
0
.
7
100
80
K
60°
/
W
30°
1.5
K W
/
RMS Limit
60
3
Conduction Period
K
/
W
40
5
K
/
W
85D(R) Series
(1600V)
20
0
Tj = 150°C
100
50
100
0
20
40
60
80
120 140
25
75
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Page 4 of 6
RoHS
RoHS
85D(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.10 Forward Voltage Drop Characterisics
(Up To 1200V)
Fig.9 Maximum Non-Repetitive Surge Current
10000
1600
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge
Tj = 25°C
1400
1200
1000
initial TJ = TJ Max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Tj = Tj Max
1000
800
600
400
100
85D(R) Series
up to 1200V
85D(R) Series
10
1
10
100
0
1
2
3
4
5
6
Number Of Equal Amplitude Half Cycle current Pulses(N)
Instantaneous Forward Voltage (V)
Fig.12 Forward Voltage Drop Characterisics
(for 1600V)
Fig.11 Maximum Non-Repetitive Surge Current
1800
1000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
1600
Initial Tj = Tj Max.
Tj = Tj Max.
No Voltage Reapplied
1400
Rated Vrrm Reapplied
100
1200
1000
800
Tj = 25°C
10
600
85D(R) Series
400
200
85D(R) Series
1
0.01
0.1
Pulse Train Duration (S)
1
0
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Fig.13 Thermal Impedance ZthJC Characteristics
10
Steady State Value
RthJC = 0.35 K/W
(DC Operation)
1
0.1
0.01
85D(R) Series
0.001
0.0001 0.001 0.01
0.1
1
10
Square Wave Pulse Duration (s)
Page 5 of 6
RoHS
RoHS
85D(R)Series
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
85
D
M
R
12
3
1
4
2
5
-
-
-
Current rating: Code = IF(AV)
D = Standard recovery device
1
2
3
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
-
-
Voltage code × 100 = VRRM (see Voltage Ratings table)
4
5
None = Stud base DO-203AB (DO-5) 1/4”-28 UNF-2A
M = Stud base DO-230AB (DO-5) M6× 1.0
19(0.75)
Ø15(Ø0.6)
Ø4.3(Ø01.7)
6.1/6.7
(0.24/0.26)
0.9/1.5
(0.03/0.06)
1/4” 28UNF-2A
For metric devices: M6×1.0
Page 6 of 6
相关型号：
85E2A-E16-T18/R57
Potentiometer, Conductive Plastic, 0.5W, 50000ohm, 10% +/-Tol, -1000,1000ppm/Cel,
BOURNS
85E2A-E20-B22/R60
Potentiometer, Conductive Plastic, 2W, 250000ohm, 20% +/-Tol, -1000,1000ppm/Cel,
BOURNS
©2020 ICPDF网 联系我们和版权申明