8T06G-CW [NELLSEMI]
TRIACs, 8A Snubberless, Logic Level and Standard; 三端双向可控硅， 8A无缓冲器，逻辑层次和水平
| 型号： | 8T06G-CW |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | TRIACs, 8A Snubberless, Logic Level and Standard |
| 文件： | 总7页 (文件大小：658K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
8T Series RoHS
SEMICONDUCTOR
TRIACs, 8A
Snubberless, Logic Level and Standard
MAIN FEATURES
2
2
SYMBOL
VALUE
UNIT
A
2
IT(RMS)
1
8
1
3
2
3
VDRM/VRRM
IGT(Q1)
V
600 to 1000
5 to 50
TO-251 (I-PAK)
TO-252 (D-PAK)
mA
(8TxxF)
(8TxxG)
A2
1
2
3
A1
A2
G
DESCRIPTION
The 8T triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
(8TxxA)
(8TxxAI)
A2
The snubberless and logic level versions are specially
recommended for use on inductive loads, thanks to their
high commutation performances.
A1
A2
G
By using an internal ceramic pad, the 8T series provides
voltage insulated tab (rated at 2500VRMS) complying
with UL standards (File ref. :E320098)
TO-263 (D2PAK)
(8TxxH)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc = 110ºC
TO-251/TO-252/TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
RMS on-state current (full sine wave)
IT(RMS)
8
A
Tc = 100ºC
t = 20 ms
80
84
32
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t
I2t Value for fusing
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
F =100 Hz
50
dI/dt
Tp =20 µs
Tj =125ºC
Peak gate current
IGM
4
1
A
PG(AV)
Average gate power dissipation
Storage temperature range
Operating junction temperature range
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
ºC
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Page 1 of 7
RoHS
8T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
8Txxxx
Unit
QUADRANT
SYMBOL
TEST CONDITIONS
TW
SW
CW
BW
(1)
IGT
I - II - III
I - II - III
MAX.
MAX.
05
10
35
50
mA
V
VD = 12 V, RL = 30Ω
VGT
1.3
0.2
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
MIN.
I - II - III
V
(2)
IT = 100 mA
IH
mA
15
20
35
40
60
10
I - III
50
60
70
80
15
25
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
20
40
400
1000
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
-
-
-
-
Tj = 125°C
Tj = 125°C
Tj = 125°C
5.4
2.8
-
3.5
1.5
-
(dI/dt)c(2)
MIN.
A/ms
Without snubber
4.5
7
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
8Txxxx
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
C
B
25
50
50
I - II - III
(1)
IGT
MAX.
mA
VD = 12 V, RL = 30Ω
IV
100
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 200 mA
(2)
mA
IH
MAX.
MAX.
25
50
I - III - IV
35
50
IL
IG = 1.2 IGT
mA
60
80
II
dV/dt(2)
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c = 3.5 A/ms, Tj = 125°C
V/µs
V/µs
MIN.
MIN.
200
5
400
10
(dV/dt)c(2)
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
50
(2)
ITM = 11 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
1
mA
Note 1: minimum lGT is guaranted at 5% of lGT max.
Note 2: for both polarities of A2 referenced to A1.
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Page 2 of 7
RoHS
8T Series RoHS
SEMICONDUCTOR
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-220AB, TO-251, TO-252, TO-263
TO-220AB Insulated
TO-263
1.6
2.5
45
70
Rth(j-c)
Junction to case (AC)
°C/W
S = 1 cm2
S = 0.5 cm2
TO-252
Rth(j-a)
Junction to ambient
°C/W
TO-220AB Insulated, TO-220AB
60
TO-251
100
S = Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
V
50 mA
50 mA
25 mA
35 mA
10 mA
5 mA
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
DPAK
8TxxA-B/8TxxAl-B
8TxxA-BW/8TxxAl-BW
8TxxA-C/8TxxAl-C
V
V
Snubberless
V
V
Standard
Snubberless
Logic level
Logic level
Logic level
V
V
8TxxA-CW/8TxxAl-CW
8TxxA-SW/8TxxAl-SW
V
V
V
8TxxA-TW/8TxxAI-TW
V
V
V
10 mA
10 mA
10 mA
35 mA
35 mA
35 mA
8TxxG-SW
8TxxF-SW
Logic level
Logic level
V
V
IPAK
D2PAK
DPAK
8TxxH-SW
8TxxG-CW
8TxxH-CW
8TxxF-CW
V
V
V
V
Snubberless
Snubberless
Snubberless
D2PAK
IPAK
V
V
V
V
AI: non insulated TO-220AB package
ORDERING INFORMATION
,
WEIGHT
2.0g
PACKAGE
DELIVERY MODE
ORDERING TYPE
MARKING
BASE Q TY
8TxxA-yy
8TxxA-yy
TO-220AB
50
50
Tube
Tube
8TxxAI-yy
8TxxAI-yy
TO-220AB (insulated)
2.3g
8TxxF-yy
8TxxG-yy
8TxxF-yy
8TxxG-yy
TO-251(I-PAK)
TO-252(D-PAK)
0.40g
0.38g
80
80
Tube
Tube
D2PAK
8TxxH-yy
8TxxH-yy
2.0g
50
Tube
Note: xx = voltage, yy = sensitivity
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Page 3 of 7
RoHS
8T Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
-
BW
8
T 06
A
Current
8 = 8A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
AF= TO-220F(ISOWAT TO-220AB, insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
H = TO-263 (D2PAK)
IGT Sensitivity
B = 50mA Standard
C = 25mA Standard
SW = 10mA Logic Level
BW = 50mA Snubberless
CW = 35mA Snubberless
TW = 5mA Logic Level
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 RMS on-state current versus case temperature
(full cycle)
P (W)
IT(RMS) (A)
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TO-220AB (insulated)
TO-220AB
TO-251
TO-252
IT(RMS)(A)
TO-263
TC(°C)
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
Fig.2-2 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)
Fig.3 Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
IT(RMS) (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E+0
1E-1
1E-2
1E-3
Zth(j-c)
D2PAK
DPAK/IPAK
(S=1cm2)
Zth(j-a)
DPAK
(S=0.5cm2)
TO-220AB/D2PAK
Zth(j-a)
Tamb(°C)
tp(s)
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
5E+2 1E+2
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Page 4 of 7
RoHS
8T Series RoHS
SEMICONDUCTOR
Fig.4 On-state characteristics (maximum values).
Fig.5 Surge peak on-state current versus number
of cycles.
ITM (A)
ITSM (A)
100
90
Tj=Tj max
Tj max.
Vto = 0.85 V
Rd = 50 mΩ
80
70
60
50
40
30
20
10
0
t=20ms
One cycle
Non repetitive
Tj initial=25°C
10
1
Repetitive
Tc=100°C
Tj=25°C
VTM(V)
Number of cycles
0.5 1.0
1.5
2.0 2.5
3.0
3.5
4.0
4.5 5.0
1
10
100
1000
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lTSM (A), l2t(A2s)
j
j
lGT,lH,lL[T ] / lGT,lH,lL [T =25°C]
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
Tj initial=25°C
IGT
dI/dt limitation:
50A/µs
ITSM
IH & IL
I2t
Tj(°C)
tp (ms)
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120 140
Fig.8-2 Relative variation of critical rate of
Fig.8-1 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
decrease of main current versus (dV/dt)c
(typical values). Standard Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
TW
C
B
CW/BW
SW
(dV/dt)c (V/µs)
(dV/dt)c (V/µs)
0.2
0.0
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
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Page 5 of 7
RoHS
8T Series RoHS
SEMICONDUCTOR
Fig.10 DPAK and D2PAK Thermal resistance junction
to ambient versus copper surface under tab
(printed circuit board Fr4, copper thickness:
35 µm.)
Fig.9 Relative variation of critical rate of decrease
of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Rth(j-a) (°C/W)
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
DPAK
D2PAK
S(cm2)
Tj(°C)
10
0
0
25
50
75
100
125
0
4
8
12
16
20
24
28
32
36
40
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
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Page 6 of 7
RoHS
8T Series RoHS
SEMICONDUCTOR
Case Style
TO-251
(I-PAK)
6.6(0.26)
6.4(0.52)
2.4(0.095)
2.2(0.086)
RoHS
1.5(0.059)
0.62(0.024)
0.48(0.019)
5.4(0.212)
5.2(0.204)
1.37(0.054)
6.2(0.244)
6(0.236)
4T
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
1
2
3
0.89(0.035)
0.62(0.024)
0.45(0.017)
0.64(0.025)
1.14(0.045)
0.76(0.030)
2.28(0.090)
4.57(0.180)
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Page 7 of 7
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