GBJ3506 [NELLSEMI]

Glass Passivated Single-Phase Bridge Rectifier;
GBJ3506
型号: GBJ3506
厂家: NELL SEMICONDUCTOR CO., LTD    NELL SEMICONDUCTOR CO., LTD
描述:

Glass Passivated Single-Phase Bridge Rectifier

局域网 二极管
文件: 总3页 (文件大小:598K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RoHS  
RoHS  
GBJ35 Series  
Nell High Power Products  
Glass Passivated Single-Phase Bridge Rectifier, 35A  
GBJ3504 Thru GBJ3512  
30±0.3  
3.6±0.1  
4.6±0.1  
+
~
~
2.5±0.2  
2.2±0.2  
2.7±0.1  
1±0.1  
0.65±0.05  
0.5±0.1  
10±0.2  
7.5±0.2 7.5±0.2  
All dimensions in millimeters  
FEATURES  
UL recognition file number E320098  
Typical IR less than 2.0 µA  
High surge current capability  
Low thermal resistance  
Compliant to RoHS  
Isolation voltage up to 2500V  
+
~
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave  
rectification for big power supply, field supply for DC motor,  
industrial automation applications.  
PRIMARY CHARACTERRISTICS  
IF(AV)  
35A  
VRRM  
IFSM  
IR  
400V to 1200V  
ADVANTAGE  
400A  
5 µA  
International standard package  
Epoxy meets UL 94 V-O flammability rating  
Small volume, light weight  
VF  
1.10V  
TJ max.  
150ºC  
Small thermal resistance  
High heat-conduction rate  
Low temperature rise  
High temperature soldering guaranteed : 260°C/10 second, 2.3kg tension force  
Weight: 6.5g (0.23 ozs)  
Page 1 of 3  
www.nellsemi.com  
RoHS  
RoHS  
GBJ35 Series  
Nell High Power Products  
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
GBJ35  
08  
PARAMETER  
UNIT  
SYMBOL  
04  
06  
10  
12  
VRRM  
VRSM  
400  
500  
400  
600  
700  
600  
800  
900  
800  
35  
1000  
1100  
1000  
1200  
1300  
1200  
Maximum repetitive peak reverse voltage  
Peak reverse non-repetitive voltage  
V
V
V
A
Maximum DC blocking voltage  
VDC  
IF(AV)  
Maximum average forward rectified output current, Tc = 85°C  
Peak forward surge current single sine-wave superimposed on  
rated load  
IFSM  
A
400  
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)  
for fusing  
A2s  
I2t  
664  
VISO  
TJ  
RMS isolation voltage from case to leads  
Operating junction storage temperature range  
Storage temperature range  
2500  
V
-40 to 150  
ºC  
ºC  
TSTG  
-40 to 150  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
GBJ35  
08  
TEST  
CONDITIONS  
UNIT  
PARAMETER  
SYMBOL  
04  
06  
10  
12  
VF  
IR  
IF = 17.5A  
Maximum instantaneous forward drop per diode  
1.10  
5
V
Maximum reverse DC current at rated DC blocking  
voltage per diod  
TA = 25°C  
µA  
TA = 150°C  
500  
THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)  
A
GBJ35  
08  
UNIT  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
04  
06  
10  
12  
Typical thermal resistance  
junction to case  
Single-side heat dissipation, sine  
half wave  
(1)  
RθJC  
1.0  
°C/W  
A mounting compound is recommended  
and the torque should be rechecked after  
a period of 3 hours to allow for the spread  
of the compound.  
Mounting  
.
N m  
torque  
0.8  
6.5  
to heatsink M3  
± 10 %  
Approximate weight  
g
Notes  
(1) With heatsink, single side heat dissipation, half sine wave.  
Ordering Information Tabel  
Device code  
10  
GBJ 35  
3
-
-
-
Product type : “GBJ” Package,1Ø Bridge  
IF(AV) rating : "35" for 35A  
1
2
3
Voltage code : code x 100 = VRRM  
Page 2 of 3  
www.nellsemi.com  
RoHS  
RoHS  
GBJ35 Series  
Nell High Power Products  
Fig.1 Derating curve for output rectified current  
Fig.2 Maximum non-repetitive peak forward  
surge current per bridge element  
50  
40  
400  
300  
200  
T
= 25°C  
J
30  
20  
100  
0
10  
0
0
50  
100  
150  
1
10  
100  
Ambient temperature (°C)  
Number of cycles at 50H  
z
Fig.3 Typical reverse characteristics per  
bridge element  
Fig.4 Typical forward characteristics per  
bridge element  
100  
10  
100  
10  
1.0  
1.0  
0.1  
0.1  
0.01  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
0
0.2 0.4 0.6  
0.8 1.0 1.2 1.4 1.6 1.8  
Percent of rated peak reverse voltage (%)  
Forward voltage (v)  
Page 3 of 3  
www.nellsemi.com  

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