GBPC50 [NELLSEMI]
Glass Passivated Single-Phase Bridge Rectifier, 50A; 玻璃钝化单相桥式整流器， 50A
| 型号： | GBPC50 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Glass Passivated Single-Phase Bridge Rectifier, 50A |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
GBPC50
SEMICONDUCTOR
Nell High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 50A
GBPC5006 Thru GBPC5016
FEATURES
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
~
Typical IR less than 1.0 µA
High surge current capability
Low thermal resistance
Solder dip 260°C, 40s
Compliant to RoHS
-
+
Glass passivated chips
TYPICAL APPLICATIONS
~
General purpose use in AC/DC bridge full wave
rectification for power supply, home appliances,
office equipment, industrial automation applications.
+
~
~
MECHANICAL DATA
Case: GBPC
Epoxy meets UL 94 V-O flammability rating
Terminals: Nickel plated on faston lugs or silver plated on
wire leads,solderable per J-STD-002 and
JESD22-B102.
Polarity: As marked,positive lead by belevled corner
Mounting Torque: 20 inches-lbs. max. (M5 screw)
-
Weight: 16g (0.56 ozs)
1.135 (28.8)
1.115 (28.3)
Hole for
#10 Screw
0.672 (17.1)
0.632 (16.1)AC
0.220 (5.59)
0.200 (5.08)
DIA.
0.672 (17.1)
0.582 (14.8)
0.542 (13.8)
0.632 (16.1)
1.135 (28.8)
1.115 (28.3)
0.034 (0.86)
0.030 (0.76)
0.732 (18.6)
0.692 (17.6)
0.094 (2.4)
DIA.
0.034 (0.86)
0.030 (0.76)
0.25
(6.35)
0.840 (21.3)
0.740 (18.8)
0.381 (9.70)
0.366 (9.30)
All dimensions in inches (millimeters)
Page 1 of 3
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RoHS
RoHS
GBPC50
SEMICONDUCTOR
Nell High Power Products
PRIMARY CHARACTERRISTICS
IF(AV)
50A
VRRM
IFSM
IR
600V to 1600V
450A
5 µA
VF
1.1V
TJ max.
150ºC
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
GBPC50
UNIT
PARAMETER
SYMBOL
12
16
06
08
10
VRRM
VRMS
1600
1120
1600
800
560
800
1000
700
1200
840
Maximum repetitive peak reverse voltage
Maximum RMS voltage
600
420
600
V
V
V
A
1000
1200
Maximum DC blocking voltage
VDC
IF(AV)
Maximum average forward rectified output current (Fig.1)
50
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
450
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
A2s
I2t
840
VISO
RMS isolation voltage from case to leads
2500
V
TJ,TSTG
Operating junction storage temperature range
-55 to 150
ºC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
GBPC50
TEST
CONDITIONS
UNIT
PARAMETER
SYMBOL
06
08
12
16
10
1.1
5
IF = 25A
VF
IR
Maximum instantaneous forward drop per diode
V
Maximum reverse DC current at rated DC blocking
voltage per diode
TA = 25°C
TA = 150°C
µA
500
CJ
Typical junction capacitance per diode
pF
4V, 1MHz
300
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
GBPC50
10
UNIT
PARAMETER
SYMBOL
06
08
12
16
(1)
Typical thermal resistance
RθJC
°C/W
1.4
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
Page 2 of 3
www.nellsemi.com
RoHS
RoHS
GBPC50
SEMICONDUCTOR
Nell High Power Products
Fig.2 Case temperature vs on-state average
current
Fig.1 On-state current and voltage
100
10
100
80
60
40
20
0
1.0
0.1
T = 25°C
j
Pulse Width = 300μs
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Peak on-state voltage (V)
00.1
0
50
100
150
0
Case temperature (°C)
Fig.3 On-state surge current vs cycles
500
400
300
200
Single half-sine-wave
(JEDEC method)
T
= 25°C
J
100
0
1
10
100
Cycles @50Hz
Page 3 of 3
www.nellsemi.com
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