MTP25A1 [NELLSEMI]

Glass Passivated Triple-Phase Bridge Rectifier;
MTP25A1
型号: MTP25A1
厂家: NELL SEMICONDUCTOR CO., LTD    NELL SEMICONDUCTOR CO., LTD
描述:

Glass Passivated Triple-Phase Bridge Rectifier

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中文:  中文翻译
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RoHS  
MTP25A1  
Nell High Power Products  
Glass Passivated Triple-Phase Bridge Rectifier, 25A  
MTP2506A1 Thru MTP2516A1  
24±0.3  
-
~
~
~
+
28.5±0.5  
6.3  
0.8  
+0.3  
0
Ø5  
All dimensions in millimeters  
FEATURES  
UL recognition file number E320098  
Universal 3-way terminals: snap-on, wire  
wrap-around, or PCB mounting  
Typical IR less than 1.0 µA  
High surge current capability  
Low thermal resistance  
Solder dip 260°C, 40s  
Compliant to RoHS  
Glass passivated chips  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave  
rectification for big power supply, field supply for DC motor,  
industrial automation applications.  
MECHANICAL DATA  
PRIMARY CHARACTERRISTICS  
IF(AV)  
Case: GBPC  
25A  
Epoxy meets UL 94 V-O flammability rating  
VRRM  
IFSM  
IR  
600V to 1600V  
Terminals: Gold plated on faston lugs or gold plated on  
300A  
5 µA  
1.1V  
wire leads,solderable per J-STD-002 and  
JESD22-B102.  
Polarity: As marked  
Mounting Torque: 20 inches-lbs.max.  
Weight: 21g (0.74 ozs)  
VF  
TJ max.  
150ºC  
Page 1 of 3  
www.nellsemi.com  
RoHS  
MTP25A1  
Nell High Power Products  
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
MTP25..A1  
PARAMETER  
UNIT  
SYMBOL  
08  
12  
06  
10  
16  
VRRM  
VRMS  
1600  
600  
1200  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
800  
560  
800  
V
1000  
700  
1120  
1600  
420  
600  
840  
V
V
A
1200  
Maximum DC blocking voltage  
VDC  
1000  
IF(AV)  
Maximum average forward rectified output current (Fig.1)  
25  
Peak forward surge current single sine-wave superimposed on  
rated load  
IFSM  
A
300  
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)  
for fusing  
2
A s  
2
I t  
374  
VISO  
RMS isolation voltage from case to leads  
2500  
V
Operating junction storage temperature range  
-55 to 150  
TJ,TSTG  
ºC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
MTP25..A1  
TEST  
UNIT  
PARAMETER  
SYMBOL  
CONDITIONS  
IF = 12.5A  
08  
12  
06  
10  
1.1  
5
16  
VF  
Maximum instantaneous forward drop per diode  
V
Maximum reverse DC current at rated DC blocking  
voltage per diod  
TA = 25°C  
IR  
µA  
TA = 150°C  
1000  
CJ  
Typical junction capacitance per diode  
pF  
4V, 1MHz  
300  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
MTP25..A1  
UNIT  
PARAMETER  
SYMBOL  
08  
12  
06  
10  
16  
(1)  
RθJC  
Typical thermal resistance  
0.9  
°C/W  
Notes  
(1) With heatsink  
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with  
#10 screw  
ORDERING INFORMATION TABLE  
Device code  
10  
MTP 25  
A1  
1
3
2
4
-
-
-
-
Module type: 3 phase Bridge  
1
2
3
4
Current rating: I  
F (AV)  
Voltage code x 100: V  
RRM  
Package outline, A1 for “GBPC”package  
Page 2 of 3  
www.nellsemi.com  
RoHS  
MTP25A1  
Nell High Power Products  
Fig.1 Forward current derating curve  
Fig.2 Typical forward characteristics  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
Mounted on a  
220x220x50mm  
Al plate heatsink  
Resistive or  
max.  
typ.  
Inductive load  
0
0
50  
100  
150  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Case temperaturek, TC ( C)  
°
Instantaneous forward voltage, VF (V)  
Fig.3 Max non-repetitive peak surge current  
Fig.4 Transient thermal impedance  
1.0  
500  
400  
300  
200  
100  
0
Zth(j-C)  
0.5  
0
0.001  
1
10  
100  
100  
10  
1.0  
0.1  
0.01  
Number of cycles at 60 Hz  
SQUARE WAVE PULSE DURATION (S)  
Page 3 of 3  
www.nellsemi.com  

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