MTP5008W [NELLSEMI]

Glass Passivated Triple-Phase Bridge Rectifier;
MTP5008W
型号: MTP5008W
厂家: NELL SEMICONDUCTOR CO., LTD    NELL SEMICONDUCTOR CO., LTD
描述:

Glass Passivated Triple-Phase Bridge Rectifier

文件: 总3页 (文件大小:604K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RoHS  
RoHS  
MTP50W  
Nell High Power Products  
Glass Passivated Triple-Phase Bridge Rectifier, 50A  
MTP5006W Thru MTP5016W  
19.00±0.20  
9.50±0.20  
7.00±0.20  
Ø5.00  
7.00±0.20  
28.5±0.5  
Ø1.3(Typ.)  
FEATURES  
All dimensions in millimeters  
UL recognition file number E320098  
Universal 3-way terminals: snap-on, wire  
wrap-around, or PCB mounting  
Typical IR less than 2.0 µA  
High surge current capability  
Low thermal resistance  
Solder dip 260°C, 40s  
Compliant to RoHS  
Glass passivated chips  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave  
rectification for big power supply, field supply for  
DC motor industrial automation applications.  
MECHANICAL DATA  
PRIMARY CHARACTERRISTICS  
IF(AV)  
Case: GBPC  
50A  
Epoxy meets UL 94 V-O flammability rating  
Terminals: Nickel plated on wire leads,solderable  
VRRM  
IFSM  
IR  
600V to 1600V  
500A  
per J-STD-002 and JESD22-B102.  
5 µA  
Polarity: As marked  
Mounting Torque: 20 inches-lbs.max.  
Weight: 21g (0.74 ozs)  
VF  
1.2V  
TJ max.  
150ºC  
Page 1 of 3  
www.nellsemi.com  
RoHS  
RoHS  
MTP50W  
Nell High Power Products  
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
MTP50..W  
10  
PARAMETER  
UNIT  
SYMBOL  
08  
12  
06  
16  
VRRM  
VRMS  
1600  
600  
1200  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
800  
560  
800  
V
1000  
700  
1120  
1600  
420  
600  
840  
V
V
A
1200  
Maximum DC blocking voltage  
VDC  
1000  
IF(AV)  
Maximum average forward rectified output current (Fig.1)  
50  
Peak forward surge current single sine-wave superimposed on  
rated load  
IFSM  
A
500  
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)  
for fusing  
A2s  
I2t  
1000  
VISO  
RMS isolation voltage from case to leads  
2500  
V
Operating junction storage temperature range  
TJ,TSTG  
-55 to 150  
ºC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
MTP50..W  
10  
TEST  
CONDITIONS  
UNIT  
PARAMETER  
SYMBOL  
08  
12  
06  
16  
IF = 25A  
VF  
IR  
Maximum instantaneous forward drop per diode  
1.2  
5
V
Maximum reverse DC current at rated DC blocking  
voltage per diod  
TA = 25°C  
µA  
TA = 150°C  
1000  
CJ  
Typical junction capacitance per diode  
pF  
4V, 1MHz  
300  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
MTP50..W  
10  
UNIT  
PARAMETER  
SYMBOL  
08  
12  
06  
16  
(1)  
RθJC  
Typical thermal resistance  
1.0  
°C/W  
Notes  
(1) With heatsink  
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with  
#10 screw  
ORDERING INFORMATION TABLE  
MTP 50  
16  
W
Device code  
1
2
3
4
-
-
-
Module type: 3 phase Bridge  
Current rating: IF(AV)  
Voltage code x 10: VRRM  
1
2
3
4
-
Package outline: W for “GBPC” package  
Page 2 of 3  
www.nellsemi.com  
RoHS  
RoHS  
MTP50W  
Nell High Power Products  
Fig.1 Forward Current Derating Curve  
Fig.2 Typical Forward Characteristics  
50  
40  
30  
20  
50  
40  
30  
20  
Mounted on a  
220x220x50mm  
Al plate heatsink  
10  
0
10  
0
max.  
typ.  
Resistive or  
Inductive load  
Tj=25°C  
Pulse Width=300μs  
0
50  
100  
150  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
TC )  
CASE TEMPERATURE -  
(
INSTANTANEOUS FORWARD VOLTAGE - VF (V)  
Fig.3 Max Non-Repetitive Peak Surge Current  
Fig.4 Transient thermal impedance  
500  
1.0  
0.5  
0
400  
300  
200  
Zth(j-C)  
100  
8.3ms Single Half  
Sine-Wave JEDEC Method  
0
1
10  
100  
0.001  
0.01  
0.1  
1.0  
10  
100  
NUMBER OF CYCLES AT 60 HZ  
SQUARE WAVE PULSE DURATION (S)  
Page 3 of 3  
www.nellsemi.com  

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