MTP50H [NELLSEMI]
Glass Passivated Three-Phase Bridge Rectifier;
| 型号： | MTP50H |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Glass Passivated Three-Phase Bridge Rectifier |
| 文件： | 总3页 (文件大小：628K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
MTP50H Series
Nell High Power Products
Glass Passivated Three-Phase Bridge Rectifier, 50A
MTP5012H Thru MTP5020H
47.1±0.5
39.8±0.3
5.0±0.3
Aluminum base plate
2-Ø4.3±0.2 Thru
Marking Area
+
~
~ ~
1.60
2.4
●
2.0 ± 0.2(typ.)
1.0 ± 0.2(typ.)
0.65±0.05
3.10±0.15
7.62 ± 0.20(typ.)
30.48±0.20
40.5
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Front
Rear
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
●
●
●
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
+
~
~
~
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
PRIMARY CHARACTERISTICS
IF(AV)
50A
Small thermal resistance
High heat-conduction rate
Low temperature rise
High temperature soldering guaranteed :
260°C/10 second, 2.3kg tension force
Weight: 12g (0.42 ozs)
VRRM
IFSM
IR
1200V to 2000V
590A
10 µA
1.10V
VF
TJ max.
150ºC
Page 1 of 3
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RoHS
RoHS
MTP50H Series
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..H
PARAMETER
SYMBOL
UNIT
12
16
18
20
VRRM
VRSM
1200
1300
1200
1600
1700
1600
1800
1900
1800
2000
2100
2000
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V
V
V
A
Maximum DC blocking voltage
VDC
IF(AV)
Maximum average forward rectified output current, TC = 85°C
50
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
590
Rating (non-repetitive, for t greater than 1 ms and less than 10 ms)
for fusing
I2t
A2s
1740
2500
VISO
TJ
RMS isolation voltage from case to leads
V
Operating junction storage temperature range
-40 to 150
-40 to 150
ºC
ºC
TSTG
Storage temperature range
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP50..H
TEST
CONDITIONS
UNIT
PARAMETER
SYMBOL
16
12
18
20
VF
IR
IF = 50A
Maximum instantaneous forward drop per diode
1.20
10
V
Maximum reverse DC current at rated DC blocking
voltage per diod
TA = 25°C
TA = 150°C
µA
1000
THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)
A
MTP25..H
18
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
12
20
16
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
(1)
Rth(j-c)
0.60
°C/W
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
Mounting
.
2.0
18
N m
torque
to heatsink M4
± 10 %
g
Approximate weight
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
Device code
16
H
50
MTP
1
3
4
2
-
-
-
-
Product type : “MTP” Package,3Ø Bridge (Three-phase bridge)
IF(AV) rating : "50" for 50A
1
2
3
4
Voltage code : code x 100 = VRRM
H: SIP (Single-in-line) package with Aluminum base plate (heat sink)
Page 2 of 3
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RoHS
RoHS
MTP50H Series
Nell High Power Products
Fig.1 Forward current derating curve
Fig.2 Forward characteristics
50
40
30
50
40
30
20
10
0
20
10
0
1.2
1.4
1.6
0.6
0.8
1.0
0
50
100
150
Case temperature (°C)
Instantaneous forward voltage (V)
Fig.3 Transient thermal impedance
Fig.4 Max Non-repetitive forward surge
current
1.0
600
400
200
0
Rth(j-c)
0.5
0
0.001
100
0.01
0.1
1
10
1
10
100
Number of cycles at 50H
Pulse duration (S)
z
Page 3 of 3
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