MTP75S [NELLSEMI]
Three-Phase Bridge Rectifier, 75A; 三相桥式整流器， 75A
| 型号： | MTP75S |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Three-Phase Bridge Rectifier, 75A |
| 文件： | 总3页 (文件大小：1350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MTP75S Series RoHS
SEMICONDUCTOR
Nell High Power Products
Three-Phase Bridge Rectifier, 75A
MTP7508S Thru MTP7518S
( MTP75/08 Thru MTP75/18 )
16.5
16.5
+
33
67.5
80
5-M5
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
PRIMARY CHARACTERRISTICS
industrial automation applications.
IF(AV)
75A
VRRM
IFSM
IR
800V to 1800V
ADVANTAGE
1000A
20 µA
1.3V
International standard package
Epoxy meets UL 94 V-O flammability rating
VF
Small volume, light weight
Small thermal resistance
Weight: 183g (6.5 ozs)
TJ max.
150ºC
Page 1 of 3
RoHS
RoHS
MTP75S Series
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP75..S
PARAMETER
UNIT
SYMBOL
08
10
12
16
18
VRRM
VRSM
800
900
800
1000
1100
1000
1200
1300
1200
75
1600
1700
1600
1800
1900
1800
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V
V
V
A
Maximum DC blocking voltage
VDC
IF(AV)
Maximum average forward rectified output current
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
1000
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
A2s
I2t
5100
VISO
TJ
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
2500
V
-40 to 150
ºC
ºC
TSTG
-40 to 125
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTP75..S
12
TEST
CONDITIONS
UNIT
PARAMETER
SYMBOL
08
10
16
18
IF = 75A
VF
IR
Maximum instantaneous forward drop per diode
1.3
V
Maximum reverse DC current at rated DC blocking
voltage per diod
TA = 25°C
20
µA
TA = 150°C
4000
THERMAL AND MECHANICAC (T = 25°C unless otherwise noted)
A
MTP75..S
12
UNIT
PARAMETER
TEST CONDITIONS
SYMBOL
08
10
16
18
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
(1)
RθJC
0.24
°C/W
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
4
4
Mounting
to heatsink M6
Nm
g
torque
to terminal M5
± 10 %
Approximate weight
183
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M6 screw.
Device code
(MTP7516S=MTP75/16)
16
S
MTP 75
3
4
-
-
-
Module type: ”MTP” for 3Ø Brıdge
IF(AV) rating:"75" for 75A
Voltage code:code x 100 = V RRM
1
2
3
4
-
Package Outline: S type package
Page 2 of 3
RoHS
RoHS
MTP75S Series
SEMICONDUCTOR
Nell High Power Products
Fig.2 Thermal lmpedance (junction to case)
Fig.1 Forward characteristic
Forward current (A)
Time (s)
Fig.3 Power dissipation vs. output current
Fig.4 Case temperature vs. output current
90
80
70
60
50
40
30
20
30
60
150
180
90
120
Output current (A)
Case Temperature (°C)
Fig.6 I2t characteristic
Fig.5 Forward surge current vs. cycle
Cycle @ 50Hz
Time (ms)
Page 3 of 3
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