MTPT10012 [NELLSEMI]
Three-Phase Bridge Thyristor;
| 型号： | MTPT10012 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Three-Phase Bridge Thyristor |
| 文件： | 总5页 (文件大小：694K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MTPT100 Series
Nell High Power Products
Three-Phase Bridge + Thyristor, 100A
MTPT10008 Thru MTPT10016
80
32
30
20
0
1
2
2- 5.5
5
4
3
4
29
20
20
6-M5 SCREWS
93.5MAX
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Three-phase bridge and a thyristor
-
(2)
(0)
(1)
R2
+
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
Glass passivated chip junction
(7)
(6)
K
G
(5)
(4)
(3)
Applications
lnverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
PRIMARY CHARACTERRISTICS
IF(AV)
100A
800V to 1600V
920A/1200A
20 µA
ADVANTAGE
VRRM
IFSM/ITSM
IR
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
VFM/VTM
TJ max.
1.3V/1.6V
Small thermal resistance
Weight: 250g (8.8 ozs)
150ºC
Page 1 of 5
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RoHS
MTPT100 Series
Nell High Power Products
Maximum Ratings for Diodes
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTPT100
SYMBOL
PARAMETER
UNIT
08
12
16
VRRM
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
800
900
1200
1300
100
1600
1700
V
V
A
VRSM
IO
Output DC current three-phase full wave, Tc = 100°C
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
920
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
2
A s
2
I t
4230
-40 to 150
-40 to 125
0.20
Operating junction temperature range
TJ
ºC
Storage temperature range
TSTG
RthJC
RthCS
ºC
Thermal Impedance, junction to case
Thermal Impedance, case to heatsink
ºC/W
0.10
ºC/W
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
MTPT100
TEST
UNIT
PARAMETER
SYMBOL
CONDITIONS
IF = 100A
08
12
1.3
20
6
16
VF
Maximum instantaneous forward drop per diode
V
Maximum reverse DC current at rated DC blocking
voltage per diod
TA = 25°C
µA
mA
IR
TA = 150°C
Maximum Ratings for Thyristor
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
100
85
UNITS
A
Maximum average on-state current
180° conduction, half sine wave ,50Hz
IT(AV)
at case temperature
°C
1200
1260
1008
t = 10 ms
No voltage
reapplied
t = 8.3 ms
Maximum peak, one-cycle, on-state
ITSM
A
non-repetitive surge current
t = 10 ms
100%VRRM
Sine half wave,
initial TJ =
reapplied
t = 8.3 ms
t = 10 ms
1058
7200
No voltage
TJ maximum
t = 8.3 ms reapplied
6590
5080
4645
2
A s
2
Maximum I t for fusing
2
t
I
t = 10 ms
100%VRRM
reapplied
t = 8.3 ms
2
t
I
2
kA √
2
Maximum I √
√
t = 0.1 ms to 10 ms, no voltage reapplied
72
s
t for fusing
Maximum on-state voltage drop
VTM
ITM = 300A, TJ = 25 °C, 180° conduction
1.6
150
400
V
Anode supply = 6 V, initial I
= 25 °C
T= 30 A, T
Maximum holding current
IH
IL
J
mA
Anode supply = 6 V
Maximum latching current
Gate pulse: 10 V, 100 μs, TJ = 25 °C
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
td
Typical delay time
1
TJ = 25 °C ,gate current = 1A dlg/dt = 1 A/µs
Vd = 0.67 VDRM
Typical rise time
tr
2
μs
ITM = 300A ; dl/dt = 15 A/µs ; TJ = TJ maximum,
VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω
Typical tum-off time
tq
50 to 150
Page 2 of 5
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RoHS
MTPT100 Series
Nell High Power Products
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
IRRM
IDRM
mA
TJ = 125 °C
20
50 Hz, circuit to base,
VISO
V
RMS isolation Voltage
2500
all terminals shorted, 25 ºC ,60s
Critical rate of rise of
off-state voltage
TJ = TJ maximum,
dV/dt
V/μs
500
exponential to 67 % rated VDRM
TRIGGERING
PARAMETER
SYMBOL
PGM
PG(AV)
IGM
TEST CONDITIONS
VALUES
UNITS
≤
tp 5 ms, TJ = TJ maximum
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
15
5
W
f = 50 Hz, TJ = TJ maximum
3
A
≤
tp 5 ms, TJ = TJ maximum
Maximum peak negative
gate voltage
- VGT
10
V
Maximum required DC
gate voltage to trigger
VGT
3
Anode supply = 6V,
TJ = 25 °C
Ω
resistive load; Ra = 1
Maximum required DC
gate current to trigger
IGT
mA
150
Maximum gate voltage
that will not trigger
VGD
V
0.25
applied
TJ = TJ maximum, 67% V
DRM
Maximum gate current
that will not trigger
IGD
10
mA
TJ = 125ºC, VD = 0.5VDRM, IG = 100 mA,
dIG/dt = 0.1 A/µs
Maximum rate of rise of
turned-on current
A/μs
dI/dt
150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
junction operating and storage
temperature range
TJ Tstg
,
- 40 to 125
°C
Maximum thermal resistance,
0.36
RthJC
DC operation
case per junction
junction to
Typical thermal resistance,
case to heatsink per module
°C/W
RthCS
Mounting surface, smooth , flat and greased
0.10
A mounting compound is recommended and the
torque should be rechecked after a period of
about 3 hours to allow for the
3
to heatsink, M5
to terminal, M5
Mounting
N.m
torque ± 10 %
3
spread of the compound.
g
250
8.8
Approximate weight
oz.
Device code
MTPT
100 16
3
1
2
-
-
1
2
3
Module type : “MTPT” for 3Ø Bridge + Thyristor
IF(AV) rating : "100" for 100 A
-
Voltage code : code x 100 = V
RRM
Page 3 of 5
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RoHS
MTPT100 Series
Nell High Power Products
Fig.1 Power dissipation
(For Diodes)
Fig.2 Forward current derating curve
(For Diodes)
300
240
180
120
60
120
100
80
60
40
20
0
Three phase
Three phase
0
0
20
40
60
80
100
0
50
100
150
T (°C)
c
Io(A)
Fig.3 Transient thermal impedance
(For Diodes)
Fig.4 Max non-repetitive forward surge current
(For Diodes)
1000
0.20
50HZ
Zth(j-C)
Per one element
500
0.10
Single phase half wave
Tj=25°C start
0
0
0.001
10
100
0.01
0.1
1.0
t (S)
10
100
1
Cycles
Fig.5 Forward characteristics
(For Diodes)
Fig.6 SCR power dissipation
150
120
90
1000
max.
100
60
30
TJ=25°C
10
0
0
0.5
1.0
1.5
2.0
2.5
20
40
60
80
100
V (V)
F
I (A)
T
Page 4 of 5
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RoHS
MTPT100 Series
Nell High Power Products
Fig.7 SCR forward current derating curve
Fig.8 SCR transient thermal impedance
120
0.50
Zth(j-C)
80
40
0
0.25
0
0
50
100
150
0.001
0.01
0.1
1.0
Time (S)
10
100
T (°C)
c
Fig.9 SCR forward characteristics
Fig.10 Gate trigger characteristics
1000
100
10
20
max.
Peak Forward Gate Voltage (10V)
10
-40ºC
1
25ºC
125ºC
Maximum Gate Non-Trigger Voltage
T =25°C
j
0.1
10
100
1000
10000
0.5
1.0
1.5
2.0
2.5
VTM(V)
IG(mA)
Page 5 of 5
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