N-60EPU06 [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 60 A; FRED超快软恢复二极管， 60 A
| 型号： | N-60EPU06 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 60 A |
| 文件： | 总6页 (文件大小：2736K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
N-60EPU06 Series
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 60 A
FEATURES
N-60APU06
N-60EPU06
Ultrafast recovery
175 °C operating junction temperature
Designed and qualified for industrial level
-
BENEFITS
Cathode
to base
Cathode
to base
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
2
2
3
1
1
Anode
3
Anode
Cathode
Anode
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
TO-247AC modified
TO-247AB
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRODUCT SUMMARY
trr
34 ns
60 A
IF(AV)
V
R
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
600
UNITS
Cathode to anode voltage
V
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
IF(AV)
T
T
= 116 °C
= 25 °C
60
C
C
IFSM
600
A
IFRM
Square wave, 20 kHz
120
- 55 to 175
TJ, TStg
°C
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
V
r
,
IR= 100 µA
IF = 60 A
600
-
-
-
-
1.50
1.30
1.75
1.55
V
Forward voltage
VF
IF = 60 A, TJ = 125 ºC
IF = 60 A, TJ = 175 ºC
-
-
-
-
1.20
1.40
50
rated
-
VR= VR
µA
Reverse leakage current
Junction capacitance
IR
CT
-
TJ = 150 ºC, VR = VR rated
VR= 600 V
500
-
39
pF
Page 1 of 6
RoHS
RoHS
N-60EPU06 Series
SEMICONDUCTOR
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
(TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
IF = 0.5A, IR = 1A, IRR=0.25A (RG#1 CKT)
IF = 1A, dIF/dt = 200 A/µs, VR=30V
TJ = 25°C
-
-
-
-
-
-
-
-
38
45
45
-
30
81
Reverse recovery time
trr
ns
TJ = 125°C
-
164
7.4
17
IF = 60 A
dIF/dt = 200 A/µs
VR = 200 V
TJ = 25°C
-
lRRM
Peak recovery current
A
TJ = 125°C
-
-
TJ = 25°C
300
Qrr
Reverse recovery charge
nC
TJ = 125°C
-
1394
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
-
RthJC
-
0.63
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
RthCS
-
-
0.2
g
-
-
-
-
5.5
0.2
Weight
oz.
1.2
(10)
2.4
(20)
Mounting torque
N ⋅ m
-
(lbf . in)
60EPU06
60APU06
Case style TO-247AC modified
Case style TO-247AC
Marking device
Page 2 of 6
RoHS
RoHS
N-60EPU06 Series
SEMICONDUCTOR
Nell High Power Products
Fig.2 Typical values of reverse current vs.
reverse voltage
Fig.1 Typical forward voltage drop characteristics
1000
1000
100
10
T =175°
j
100
T =125°
j
1
T =175°
T =125°
j
T =25°
j
j
10
1
0.1
T =25°
j
0.01
0.001
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
500
600
Forward voltage drop-V (A)
Reverse voltage-V (V)
R
F
Fig.3 Typical junction capacitance vs. reverse voltage
1000
100
T =25°
j
10
0
100
200
300
400
500
600
Reverse voltage-V (V)
R
Fig4. Maximum thermal impedance Z
characteristics
thJC
1
0.7
0.5
0.3
Ri (°C/W)
Ti (s)
0.06226
0.32503
0.24271
0.00049
0.01294
0.24310
0.1
0.1
Notes:
0.05
Tj
Tc
t1
t2
t3
1. Duty factor D=ton/period
2. Peak TJ=PDMxZthJC+Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Rectangular pulse duration-t (s)
on
Page 3 of 6
RoHS
RoHS
N-60EPU06 Series
SEMICONDUCTOR
Nell High Power Products
Fig.5 Max. Allowable Case Temperature
Fig.6 Forward Power Loss Characteristics
Vs. Average Forward Current
180
150
120
90
140
RMS Limit
120
DC
100
80
Square Wave (D=0.50)
80% Rated Vr applied
D = 0.01
D = 0.02
60
D = 0.05
60
40
20
0
D = 0.10
D = 0.20
D = 0.50
DC
30
see note (3)
0
0
20
40
60
80
100
0
20
40
60
80
100
Average Forward Current I
(A)
Average Forward Current I
(A)
F(AV)
F(AV)
Fig.7 Typical Stored Charge vs. dI /dt
Fig.8 Typical Reverse Recovery Time vs. dI /dt
F
F
300
3000
2500
2000
T =125°C
j
T =125°C
T =25°C
j
j
T =25°C
j
250
200
150
100
50
IF = 30A
IF = 60A
IF = 30A
IF = 60A
1500
1000
500
0
0
100
1000
10
100
1000
dI /dt (A/µs)
F
dI /dt (A/µs)
F
Ordering Information Tabel
Device code
N
-
60
E
P
U
06
1
2
3
4
5
-
Nell
1
2
3
4
5
6
-
-
Current rating (60 = 60A)
Single Diode
E = 2 pins
A = 3 pins
-
-
TO-247AC (Modified)
Ultrafast Recovery
-
VoltageRating (06 = 600 V)
Page 4 of 6
RoHS
RoHS
N-60EPU06 Series
SEMICONDUCTOR
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
Page 5 of 6
RoHS
RoHS
N-60EPU06 Series
SEMICONDUCTOR
Nell High Power Products
Outine Table
N-60EPU06
Outine Table
N-60APU06
Page 6 of 6
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