N-80EPU12 [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 80 A; FRED超快软恢复二极管， 80 A
| 型号： | N-80EPU12 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 80 A |
| 文件： | 总6页 (文件大小：1911K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
N-80EPU12 Series
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 80 A
FEATURES
N-80APU12
N-80EPU12
Ultrafast recovery
175 °C operating junction temperature
Designed and qualified for industrial level
-
BENEFITS
Cathode
to base
Cathode
to base
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
2
2
3
1
1
Anode
3
Anode
Cathode
Anode
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
TO-247AC modified
TO-247AB
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRODUCT SUMMARY
trr
IF(AV)
VR
35 ns
80 A
1200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
1200
V
lF(AV)
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
T
C = 110 °C
C = 25 °C
80
610
lFSM
T
A
lFRM
Square wave, 20 kHz
129
Tj, TStg
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
VBR,
Vr
Breakdown voltage,
blocking voltage
-
-
lR = 100µA
1200
-
-
-
-
-
-
lF = 80A
2.8
3.3
2.1
-
3.3
V
Forward voltage
VF
-
-
lF = 160A
lF = 80A, TJ = 125°C
VR = VR rated
100
500
-
lR
µA
Reverse leakage current
Junction capacitance
-
TJ = 150°C, VR = VR rated
VR = 200V
CT
pF
50
Page 1 of 6
RoHS
RoHS
N-80EPU12 Series
SEMICONDUCTOR
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
(TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
IF = 0.5A, IR = 1A, IRR=0.25A
IF = 1A, dIF/dt = 100 A/µs, VR=30V
TJ = 25°C
-
-
-
-
-
-
-
-
35
40
-
30
330
430
5
Reverse recovery time
trr
ns
-
TJ = 125°C
-
IF = 80 A
dIF/dt = 200 A/µs
VR = 800 V
TJ = 25°C
-
lRRM
Peak recovery current
A
TJ = 125°C
13
-
-
TJ = 25°C
740
Qrr
Reverse recovery charge
nC
TJ = 125°C
-
3450
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
-
-
RthJC
0.3
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
RthCS
-
-
0.39
g
-
-
-
-
5.9
Weight
oz.
0.22
0.6
(5)
1.2
(10)
Mounting torque
N ⋅ m
-
(lbf . in)
80EPU12
80APU12
Case style TO-247AC modified
Case style TO-247AC
Marking device
Page 2 of 6
RoHS
RoHS
N-80EPU12 Series
SEMICONDUCTOR
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.35
0.30
0.25
D = 0.9
0.7
0.20
0.15
0.5
0.3
Note:
t1
t2
0.10
0.05
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
Single pulse
0
10-5
10-4
10-3
10-2
10-1
1
Rectangular pulse duration (seconds)
Fig3. Reverse recovery time vs. current rate
of change
Fig.2 Forward current vs. forward voltage
500
200
180
160
T
J
V
= 125°C
= 800V
R
400
300
200
100
0
T
J
= 175°C
J
140
120
100
80
160A
T
= 125°C
80A
40A
60
T
= 25°C
J
40
T
= -55°C
J
20
0
0
1
2
3
4
0
200
400
600
800 1000 1200
Anode-to-cathode voltage-VF (V)
Current rate of change-diF/dt(A/µs)
Fig.4 Reverse recovery charge vs. current
rate of change
Fig.5 Reverse recovery current vs. current
rate of change
8000
50
160A
T
J
V
= 125°C
T
J
V
= 125°C
160A
= 800V
7000
6000
5000
4000
3000
2000
1000
R
= 800V
R
80A
40A
40
30
20
10
0
80A
40A
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
Current rate of change-diF/dt(A/µs)
Current rate of change-diF/dt(A/µs)
Page 3 of 6
RoHS
RoHS
N-80EPU12 Series
SEMICONDUCTOR
Nell High Power Products
Fig.7 Maximum average forward current vs.
case temperature
Fig.6 Dynamic parameters vs. junction temperature
1.2
1
140
Duty cycle = 0.5
J
T
= 175°C
120
100
80
0.8
trr
0.6
lRRM
60
40
20
0
0.4
Qrr
0.2
0
0
25
50
75
100
125
150
25
50
75
100
125
150
175
Junction temperature-TJ (°C)
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
350
300
250
200
150
100
50
0
1
10
100 200
Reverse voltage-VR (V)
Ordering Information Tabel
Device code
N
-
80
E
P
U
12
1
2
3
4
5
-
Nell
1
2
3
4
5
6
-
-
Current rating (80 = 80A)
Single Diode
E = 2 pins
A = 3 pins
-
-
TO-247AC (Modified)
Ultrafast Recovery
-
VoltageRating (12 = 1200 V)
Page 4 of 6
RoHS
RoHS
N-80EPU12 Series
SEMICONDUCTOR
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
Page 5 of 6
RoHS
RoHS
N-80EPU12 Series
SEMICONDUCTOR
Nell High Power Products
Outine Table
N-80EPU12
Outine Table
N-80APU12
Page 6 of 6
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