NKE800 [NELLSEMI]
Standard Recovery Diodes;
| 型号： | NKE800 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Standard Recovery Diodes |
| 文件： | 总4页 (文件大小：671K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
NKE800 Series RoHS
Nell Semiconductors
Standard Recovery Diodes, 800 A
( SUPER MAGN-A-PAK Power Modules)
60
3
2
1
132
150
4-Ø8.5
180
SUPER MAGN-A-PAK (1)
3-M12x1.75
FEATURES
• UL approved file E320098
• High current capability
• High surge capability
• High voltage ratings up to 2000 V
• 3000 VRMS isolating voltage with non-toxic substrate
• Industrial standard package
• Compliant to RoHS
All dimensions in millimeters
APPLICATIONS
• Rectifying bridge for large motor drives
• Rectifying bridge for large UPS
• Rectifying power supplier
• Frequency converters
• Snubber for large GTO and IGBT
2
3
NKE
(A)
(K)
PRODUCT SUMMARY
IF(AV)
800A
Type
Single Diode, High Voltage
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
800
UNIT
A
IF(AV)
TC
100
ºC
A
1256
IF(RMS)
IFSM
I2t
100
ºC
50 HZ
60 HZ
50 HZ
60 HZ
30000
31410
4500
A
kA2s
4094
I2√t
VRRM
kA2√s
V
45000
800 to 2000
-40 to 150
Range
TStg, TJ
ºC
Page 1 of 4
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RoHS
NKE800 Series RoHS
Nell Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
VRSM, MAXIMUM NON-REPETITIVE
lRRM MAXIMUM
AT TJ MAXIMUM
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
V
V
08
12
16
20
800
900
1300
1700
1200
1600
NKE800
40
2000
2100
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNIT
800
A
ºC
A
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
180° conduction, half sine wave at TC = 100°C
100
1256
30
IF(RMS)
Maximum RMS forward current
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
31.4
Maximum peak, one-cycle forward
non-reptitive surge current
IFSM
kA
25.2
26.4
100%VRRM
reapplied
Sine half wave,
initial TJ = TJ maximum
4500
4094
3175
2893
45000
No voltage
reapplied
Maximum l2t for fusing
I2t
kA2s
100%VRRM
reapplied
Maximum l2√t for fusing
I2√t
kA2√s
t = 0.1 to 10 ms, no voltage reapplied
lpk = 2400A, TJ = 25°C
Maximum forward voltage drop
VFM
1.45
V
UNIT
VALUES
PARAMETER
BLOCKING
SYMBOL
TEST CONDITIONS
RMS insulation Voltage
VINS
t = 1s
V
3000
TJ = TJ maximum, rated VRRM applied
40
mA
Maximum peak reverse leakage current
lRRM
TJ = 25°C
µA
100
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNIT
Maximum junction operating and storage
temperature range
TJ,Tstg
-40 to 150
°C
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.054
°C/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth,
flat and greased
RthCS
0.008
6 to 8
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
SMAP to heatsink, M8
Mounting torque,
.
N m
busbar to SMAP, M12
±10%
13 to 16
g
Approximate weight
Case style
3500
See dimensions - link at the end of
datasheet
SUPER MAGN-A-PAK (1)
Page 2 of 4
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RoHS
NKE800 Series RoHS
Nell Semiconductors
Ordering Information Tabel
Device code
/
16
NKE
800
2
1
3
-
-
-
Module type, NKE, Single Diode module
Current rating : IF(AV)
1
2
3
Voltage code x 100 = VRRM
Fig.2 Transient thermal impedance
(junction-case)
Fig.1 On-state current vs. voltage
characteristics
0.08
0.06
0.04
0.02
0
5
4
3
2
1
0
TJ = 25°C
100
1000
10000
0.001
0.01
0.1
1
10
On-state current (A)
Time (s)
Fig.4 Case temperature vs. on-state
average current
Fig.3 Power consumption vs. average current
160
140
120
100
80
1200
180°
180
Conduction Angle
0
180
0
1000
800
600
400
200
0
120°
90°
Conduction Angle
60°
30°
30°
60°
90°
60
120°
40
180°
20
0
100 200 300 400 500 600 700 800
On-state average current (A)
0
200
400
600
800
1000
On-state average current (A)
Page 3 of 4
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RoHS
NKE800 Series RoHS
Nell Semiconductors
Fig.6 I2t characteristics
Fig.5 On-state surge current vs cycles
4800
4200
3600
3000
2400
1800
1200
600
32
28
24
20
16
12
8
0
4
1
10
100
1
10
Cycles @50Hz
Time (ms)
Page 4 of 4
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