NKH11020A [NELLSEMI]
Thyristor/Diode;
| 型号： | NKH11020A |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Thyristor/Diode |
| 文件： | 总4页 (文件大小：663K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
NKT110A/NKH110A Series RoHS
Nell High Power Products
Thyristor/Diode and Thyristor/Thyristor, 110A
(ADD-A-PAK Power Modules)
80
1
2
3
2-Ø6.4
15
20
20
15
ADD-A-PAK
93±1
68
3-M5 SCREWS
FEATURES
4-2.8x0.8
18
• High voltage
• Electrically isolated by DBC ceramic (AI 2O3)
• 3000 VRMS isolating voltage
• Industrial standard package
• High surge capability
• SCR GPP chips
• Modules uses high voltage power thyristors/diodes in two
All dimensions in millimeters
basic configurations
• Simple mounting
• UL approved file E320098
• Compliant to RoHS
• Designed and qualified for multiple level
APPLICATIONS
• DC motor control and drives
• Battery charges
• Welders
• Power converters
• Lighting control
(7)
(6)
1
1
2
2
3
3
NKT
(5)
(4)
NKH
• Heat and temperature control
(5)
(4)
PRODUCT SUMMARY
IT(AV) / IF(AV)
110 A
MAJOR RATINGS AND CHARACTERISTICS
UNITS
SYMBOL
CHARACTERISTICS
VALUE
IT(AV) / IF(AV)
85 °C
85 °C
50 Hz
60 Hz
50 Hz
60 Hz
110
A
IT(RMS) / IF(RMS)
173
2400
A
ITSM / IFSM
2520
28.8
kA2s
I2t
26.3
I2√
kA2√s
V
t
288
Range
Range
400 to 1600
-40 to 125
VDRM / VRRM
TJ
°C
Page 1 of 4
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RoHS
NKT110A/NKH110A Series RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUMREPETITIVE VRSM/VDSM, MAXIMUM NON-REPETITIVE
IRRM/IDRM
AT 125 °C
mA
TYPE
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
NUMBER
04
08
12
14
16
18
20
400
800
500
900
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
NKT110..A
NKH110..A
12
FORWARD CONDUCTION
PARAMETER
UNITS
TEST CONDITIONS
VALUE
SYMBOL
lT(AV)
lF(AV)
lT(RMS)
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
180° conduction, half sine wave, 50Hz , TC = 85°C
110
A
180° conduction, half sine wave, 50Hz ,TC = 85°C
Maximum RMS on-state current
173
lF(RMS)
t = 10 ms
2400
2520
2016
2117
28.8
26.3
No voltage
A
reapplied
t = 8.3 ms
lTSM
lFSM
Maximum peak, one-cycle, on-state
non-repetitive surge current
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100%VRRM
reapplied
Sine half wave,
initial TJ = TJ maximum
No voltage
reapplied
Maximum l2t for fusing
kA2s
l2t
t = 10 ms
t = 8.3 ms
20.3
18.6
100%VRRM
reapplied
I2
kA2√
Maximum I 2√
t for fusing
√
t
t = 0.1 ms to 10 ms, no voltage reapplied
288
s
Maximum value of threshold voltage
VT(TO)
rt
1.0
2.5
V
TJ = TJ Maximum
Maximum value of on-state slope resistance
mΩ
Maximum on-state voltage drop
VTM
VFM
ITM = 330A, TJ = 25°C, 180° conduction
IFM = 330A, TJ = 25°C, 180° conduction
1.6
1.3
V
Maximum forward voltage drop
Maximum holding current
Maximum latching current
250
400
IH
IL
Anode supply = 6V, resistive load TJ = 25°C
mA
BLOCKING
PARAMETER
SYMBOL
IRRM
IDRM
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
mA
TJ = 125 °C
12
50 Hz, circuit to base,
all terminals shorted
2500 (1min)
3000 (1s)
VISO
V
RMS isolation Voltage
Critical rate of rise of
off-state voltage
TJ = TJ maximum,
exponential to 67 % rated V DRM
dV/dt
V/μs
1000
Page 2 of 4
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RoHS
NKT110A/NKH110A Series RoHS
Nell High Power Products
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
≤
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
tp 5 ms, TJ = TJ maximum
10
3
W
A
PG(AV)
IGM
f = 50 Hz, TJ = TJ maximum
3
≤
tp 5 ms, TJ = TJ maximum
Maximum peak negative
gate voltage
- VGM
10
V
Maximum required DC
gate voltage to trigger
VGT
0.7~1.8
Anode supply = 6 V,
resistive load; Ra = 1
TJ = 25 °C
Ω
Maximum required DC
gate current to trigger
IGT
mA
20~150
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
VGD
IGD
V
0.25
10
DRM applied
TJ = TJ maximum, 66.7% V
mA
A/μs
= 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
TJ
dI/dt
150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
TJ
- 40 to 125
°C
TStg
RthJC
RthCS
- 40 to 150
0.22
DC operation
Mounting surface, smooth , flat and greased
°C/W
0.10
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
AAP to heatsink, M6
Mounting
torque ± 10 %
4
N.m
busbar to AAP, M5
g
120
Approximate weight
Case style
oz.
4.23
ADD-A-PAK
ORDERING INFORMATION TABLE
Device code
110
/
16
A
NKT
1
2
3
4
-
Module type: NKT for (Thyristor + Thyristor) module
NKH for (Thyristor + Diode) module
1
-
-
-
Current rating: IT(AV) / IF(AV)
2
3
4
Voltage code x 100 = VRRM
Assembly type,”A” for soldering type
Page 3 of 4
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RoHS
NKT110A/NKH110A Series RoHS
Nell High Power Products
Fig.2 Max. Junction To case Thermal Impedance Vs. Time
Fig.1 Peak On-state Voltage vs. Peak On-state Current
0.3
3
0.25
0.2
2.6
TJ = 125°C
2.2
1.8
1.4
1
0.15
0.1
0.05
0
0.6
10
100
1000
0.001
10
0.01
0.1
1
Time (s)
On-state current (A)
Fig.3 Power Dissipation Vs. Average On-state Current
Fig.4 Case Temperature Vs. Average On-state Current
300
140
120
180°
250
180
0
180
Conduction Angle
120°
0
90°
100
80
Conduction Angle
60°
200
30°
150
100
60
40
50
0
30°
60°
90°
120°
180°
20
0
120
150
30
90
60
0
0
30
90
120
60
150
180
210
On-state average current (A)
On-state average current (A)
Fig.6 Gate characteristics
Fig.5 Surge On-state Current Vs. Cycles
2.5
2
2
Peak Forward Gate Voltage (10V)
¹
10
P
e
a
A
P
o
k G
v
e
w
r
a
e
a
5
2
t
r (
g
e
e G
1
0
w
a
)
t
e P
o
w
e
r (
3
w
)
1.5
º
10
-40°C
5
25°C
1
125°C
2
Maximum Gate Voltage that will not trigger any unit
10-1
0.5
²
³
10
¹
2
5
2
5
2
5
10
10
1
10
100
Cycles @50Hz
Gate current (mA)
Page 4 of 4
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