NKT135-16A [NELLSEMI]
Thyristor Diode and Thyristor / /Thyristor, 135A(New INT-A-PAK Power Modules); 晶闸管二极管和晶闸管/ /晶闸管， 135A （新INT -A- PAK功率模块）
| 型号： | NKT135-16A |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Thyristor Diode and Thyristor / /Thyristor, 135A(New INT-A-PAK Power Modules) |
| 文件： | 总4页 (文件大小：1383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
NKT135A/NKH135A Series RoHS
SEMICONDUCTOR
Nell High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135A
(New INT-A-PAK Power Modules)
24
23
23
2.8x0.8+0.1
New INT-A-PAK
2−Ø6.5
15+1
3-M6 SCREWS
80+1
94+1
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI 2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in two
basic configurations
All dimensions in millimeters
• Simple mounting
• UL approved file E320098
• Compliant to RoHS
• Designed and qualified for multiple level
NKT
NKH
APPLICATIONS
• DC motor control and drives
• Battery charges
• Welders
+
+
-
-
~
~
• Power converters
• Lighting control
-
-
~
~
+
+
K2 G2
G1 K1
K1 G1
• Heat and temperature control
PRODUCT SUMMARY
IT(AV)
135 A
MAJOR RATINGS AND CHARACTERISTICS
UNITS
VALUE
135
SYMBOL
CHARACTERISTICS
IT(AV)
85 °C
A
IT(RMS)
85 °C
50 Hz
60 Hz
50 Hz
60 Hz
212
A
3800
3990
72.2
65.9
722
ITSM
kA2s
I2t
I2√t
kA2√s
V
Range
Range
400 to 1600
-40 to 125
V
DRM / VRRM
TJ
°C
www.nellsemi.com
Page 1 of 4
RoHS
NKT135A/NKH135A Series RoHS
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM REPETITIVE VRSM/VDSM, MAXIMUM NON-REPETITIVE
IRRM/IDRM
AT 125 °C
mA
TYPE
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
NUMBER
04
08
12
14
16
400
800
500
900
NKT135
1200
1400
1600
1300
1500
1700
20
NKH135
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave ,50Hz
UNITS
VALUE
135
A
Maximum average on-state current
at case temperature
IT(AV)
lT(RMS)
ITSM
°C
85
Maximum RMS on-state current
180° conduction, half sine wave ,50Hz ,TC = 85°C
212
t = 10 ms
A
3800
3990
72.2
65.9
Maximum peak, one-cycle, on-state
non-repetitive surge current
t = 8.3 ms
No voltage
Sine half wave,
reapplied
t = 10 ms
t = 8.3 ms
initial TJ =
TJ maximum
Maximum I2t for fusing
I2t
kA2s
100%VRRM
reapplied
t = 10 ms
t = 8.3 ms
50.5
46
2
Maximum I2√
kA2√s
√
t
t = 0.1 ms to 10 ms, no voltage reapplied
ITM = 480A , TJ = 25 °C, 180° conduction
722
1.7
t for fusing
I
Maximum on-state voltage drop
VTM
VFM
V
IFM = 480A, TJ = 25 °C, 180° conduction
Maximum forward voltage drop
Maximum holding current
1.4
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C
40~150
IH
IL
mA
Anode supply = 6 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 °C
400
Maximum latching current
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
IRRM
,
mA
TJ = 125 °C
20
IDRM
50 Hz, circuit to base,
all terminals shorted
2500 (1min)
3500 (1s)
VISO
V
RMS isolation Voltage
Critical rate of rise of
off-state voltage
TJ = TJ maximum,
dV/dt
V/μs
800
exponential to 67 % rated V DRM
www.nellsemi.com
Page 2 of 4
RoHS
NKT135A/NKH135A Series RoHS
SEMICONDUCTOR
Nell High Power Products
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
≤
tp 5 ms, TJ = TJ maximum
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
10
3
W
A
PG(AV)
IGM
f = 50 Hz, TJ = TJ maximum
3
≤
tp 5 ms, TJ = TJ maximum
Maximum peak negative
gate voltage
- VGT
10
V
Maximum required DC
gate voltage to trigger
VGT
0.7~1.8
Anode supply = 6 V,
resistive load; Ra = 1
TJ = 25 °C
Ω
Maximum required DC
gate current to trigger
IGT
mA
30~150
Maximum gate voltage
that will not trigger
VGD
V
0.25
10
DRM applied
TJ = TJ maximum, 66.7% V
Maximum gate current
that will not trigger
IGD
mA
A/μs
Maximum rate of rise of
turned-on current
= 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
TJ
dI/dt
150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 125
°C
Maximum storage
temperature range
TStg
RthJC
RthCS
- 40 to 150
0.2
Maximum thermal resistance,
junction to ca se per junction
DC operation
Mounting surface, smooth , flat and greased
°C/W
N.m
Maximum thermal resistance,
case to heatsink per module
0.055
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
IAP to heatsink , M6
Mounting
4 to 6
torque 10 %
busbar to IAP , M6
g
Approximate weight
Case style
220
oz.
7.05
New INT-A-PAK
ORDERING INFORMATION TABLE
Device code
135
/
16
A
NKT
1
-
2
3
4
Module type: NKT for (Thyristor + Thyristor) module
NKH for (Thyristor + Diode) module
1
-
-
Current rating: IT(AV)
2
3
Voltage code x 100 = VRRM
4
-
Assembly type,”A” for soldering type
www.nellsemi.com
Page 3 of 4
RoHS
NKT135A/NKH135A Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 On-state current vs. voltage characteristic
Fig.2 Transient thermal impedance(junction-case)
0.25
5
4
3
2
1
0.2
TJ = 125°C
0.15
0.1
0.05
0
0.001
0.01
0.1
1
10
100
1000
10000
Time (s)
On-state current (A)
Fig.4 Case temperature vs. on-state average current
Fig.3 Power consumption vs. average current
350
140
180°
300
120
120°
90°
180
0
0
180
60°
250
200
150
100
50
100
80
60
40
20
0
Conduction Angle
30°
Conduction Angle
30°
60°
90°
120°
180°
0
0
50
100
150
200
0
50
100
150
200
250
On-state average current (A)
On-state average current (A)
Fig.6 Gate characteristics
Fig.5 On-state surge current vs cycles
4.5
2
101
5
4
Peak Forward Gate Voltage (10V)
3.5
3
2
100
5
2.5
2
125°C 25°C
-30°C
Maximum Gate Voltage that will not trigger any unit
2
1.5
10-1
101
102
103
2
5
2
5
2
5
1
1
10
100
Gate current (mA)
Cycles @50Hz
www.nellsemi.com
Page 4 of 4
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