2N7002BKV [NEXPERIA]
60 V, 340 mA dual N-channel Trench MOSFETProduction;
| 型号： | 2N7002BKV |
| 厂家： | 
Nexperia |
| 描述： | 60 V, 340 mA dual N-channel Trench MOSFETProduction |
| 文件： | 总14页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
28 December 2022
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Logic-level compatible
•
•
•
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswich
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tamb = 25 °C
-
-
-
-
60
V
-20
-
20
V
VGS = 10 V; Tamb = 25 °C
[1]
340
mA
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.01; Tj = 25 °C
-
1
1.6
Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
S1
Description
source1
gate1
Simplified outline
Graphic symbol
1
2
6
5
2
G1
6
5
4
3
D2
drain2
4
S2
source2
gate2
5
G2
6
D1
drain1
1
2
3
3
4
SOT666
017aaa055
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
2N7002BKV
SOT666
plastic, surface-mounted package; 6 leads; 0.5 mm pitch; SOT666
1.6 mm x 1.2 mm x 0.55 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
ZG
2N7002BKV
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2N7002BKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
2 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tamb = 25 °C
-
60
V
-20
20
V
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-
-
-
-
-
340
240
1.2
mA
mA
A
IDM
Ptot
peak drain current
total power dissipation
[2]
[1]
350
410
1140
mW
mW
mW
Tsp = 25 °C
Per device
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb = 25 °C
[2]
-
525
150
150
150
mW
°C
-
Tamb
Tstg
-55
-65
°C
°C
Source-drain diode
IS
source current
Tamb = 25 °C
HBM
[1]
[3]
-
-
340
2
mA
kV
ESD maximum rating
VESD
electrostatic discharge
voltage
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
017aaa001
017aaa002
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
(°C)
- 25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
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2N7002BKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
3 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
017aaa059
10
I
D
(A)
Limit R
= V /I
DS D
DSon
1
(1)
(2)
- 1
10
10
10
(3)
(4)
(5)
- 2
- 3
(6)
- 1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig. 3. Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a function
of drain-source voltage
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2N7002BKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
4 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from in free air
junction to ambient
[1]
-
-
240
K/W
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
315
265
-
360
305
110
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa060
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
10
0.25
0.05
0.1
0
0.02
0.01
10
1
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa061
3
10
Z
th(j-a)
duty cycle = 1
0.75
(K/W)
0.5
2
0.33
0.2
10
0.25
0.1
0
0.05
0.02
0.01
10
1
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
©
2N7002BKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
5 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
VGSth
drain-source
breakdown voltage
ID = 10 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
1.1
1.6
2.1
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
1
µA
µA
µA
µA
Ω
-
10
10
10
2
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.01; Tj = 25 °C
1.3
VGS = 10 V; ID = 500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.01; Tj = 25 °C
-
-
1
1.6
-
Ω
gfs
forward
VDS = 10 V; ID = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.01; Tj = 25 °C
550
mS
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 30 V; ID = 300 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.5
0.2
0.1
33
7
0.6
nC
nC
nC
pF
pF
pF
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
50
-
Coss
Crss
reverse transfer
capacitance
4
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5
10
-
ns
ns
ns
ns
6
turn-off delay time
fall time
12
7
24
-
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V; Tj = 25 °C
0.47
0.75
1.1
V
©
2N7002BKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
6 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
017aaa039
017aaa040
- 3
0.7
V
10
= 4.0 V
GS
I
D
3.5 V
(A)
0.6
I
D
(A)
3.25 V
3.0 V
0.5
0.4
0.3
0.2
0.1
0.0
- 4
- 5
- 6
10
10
10
(1)
(2)
(3)
2.75 V
2.5 V
0.0
1.0
2.0
3.0
V
4.0
0.0
1.0
2.0
3.0
(V)
V
(V)
GS
DS
Tamb = 25 °C
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa041
017aaa042
6.0
6.0
R
DSon
(Ω)
R
DSon
(Ω)
(1)
4.0
2.0
0.0
4.0
2.0
0.0
(2)
(3)
(1)
(2)
(4)
(5)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
10.0
(V)
I
D
(A)
V
GS
Tamb = 25 °C
ID = 500 mA
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
©
2N7002BKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
7 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
017aaa043
017aaa044
1.0
2.4
I
D
a
(A)
0.8
1.8
1.2
0.6
0.0
(1)
(2)
0.6
0.4
0.2
0.0
0.0
1.0
2.0
3.0
4.0
5.0
(V)
- 60
0
60
120
180
(°C)
V
T
amb
GS
VDS > ID × RDSon
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig. 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa045
017aaa046
2
3.0
10
V
GS(th)
(V)
(1)
C
(pF)
(1)
(2)
(3)
2.0
1.0
0.0
(2)
10
(3)
1
10
- 1
2
- 60
0
60
120
180
(°C)
1
10
10
T
amb
V
(V)
DS
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
ambient temperature
as a function of drain-source voltage; typical
values
©
2N7002BKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
8 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
017aaa047
5.0
V
(V)
V
GS
DS
4.0
I
D
3.0
2.0
1.0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0.0
0.0
Q
Q
GS
GD
0.2
0.4
0.6
0.8
Q
G
(nC)
Q
G(tot)
003aaa508
ID = 300 mA; VDD = 6 V; Tamb = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa048
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
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2N7002BKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
9 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
p
c
D
E
e
e
H
L
w
y
A
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT666
Fig. 18. Package outline SOT666
©
2N7002BKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
10 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
13. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
(2×)
1.075
1.7
2
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
(4×)
0.6
(2×)
0.5
(4×)
0.65
(2×)
sot666_fr
Fig. 19. Reflow soldering footprint for SOT666
©
2N7002BKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
11 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
2N7002BKV v.3
Modifications:
Release date
20221228
Data sheet status
Change notice
Supersedes
Product data sheet
-
2N7002BKV v.2
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia
•
•
Legal texts have been adapted to the new company name where appropriate
Product changed to non-automotive qualification
2N7002BKV v.2
2N7002BKV v.1
20100922
20100610
Product data sheet
Product data sheet
-
-
2N7002BKV v.1
-
©
2N7002BKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
12 / 14
Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
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and products using Nexperia products, and Nexperia accepts no liability for
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Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
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or problem which is based on any weakness or default in the customer’s
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[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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©
2N7002BKV
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Product data sheet
28 December 2022
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Nexperia
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 December 2022
©
2N7002BKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
14 / 14
相关型号：
2N7002BKW
TRANSISTOR 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN, FET General Purpose Small Signal
NXP
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