2N7002KQB [NEXPERIA]
60 V N-channel Trench MOSFETProduction;
| 型号： | 2N7002KQB |
| 厂家： | 
Nexperia |
| 描述： | 60 V N-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002KQB
60 V N-channel Trench MOSFET
22 September 2021
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3
(SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
Logic-level compatible
•
•
•
•
•
Side wettable flanks for optical solder inspection
Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-16
-
16
V
ID
VGS = 10 V; Tamb = 25 °C
[1]
720
mA
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 720 mA; Tj = 25 °C
-
635
850
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
D
G
S
D
2
source
drain
3
3
G
1
2
Transparent top view
S
DFN1110D-3 (SOT8015)
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
2N7002KQB
DFN1110D-3 plastic, leadless extremely thin small outline package with SOT8015
side-wettable flanks (SWF); 3 terminals; 0.65 mm pitch;
1.1 mm x 1 mm x 0.48 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
C7
2N7002KQB
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2N7002KQB
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Product data sheet
22 September 2021
2 / 15
Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
gate-source voltage
Tj = 25 °C
-
VGS
-16
16
V
VGSMlim
ID
peak gate-source voltage δfactor = 0.1; tp = 50 µs; Tj = 25 °C
-20
20
V
drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
720
460
2.9
420
960
4.2
150
150
150
mA
mA
A
-
IDM
Ptot
peak drain current
-
total power dissipation
[2]
[1]
-
mW
mW
W
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS
source current
Tamb = 25 °C
HBM
[1]
-
-
700
mA
V
ESD maximum rating
VESD
electrostatic discharge
voltage
1000
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalanche energy
Tj(init) = 25 °C; ID = 0.05 A
-
1.5
mJ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
001aao121
001aao122
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
-25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
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Product data sheet
22 September 2021
3 / 15
Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
aaa-033486
10
Limit R
= V /I
DS
DSon
D
I
D
(A)
t
t
= 10 µs
p
p
1
= 100 µs
DC; T
= 25 °C;
drain mounting pad 6 cm
amb
2
-1
10
10
t
t
t
= 1 ms
p
p
p
= 10 ms
= 100 ms
DC; T = 25 °C
sp
-2
2
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
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2N7002KQB
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Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
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Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
245
110
25
Max
300
130
30
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-033487
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
0.33
10
0.25
0.2
0.1
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-033488
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.25
0.1
0.2
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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2N7002KQB
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Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
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Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.3
1.7
2.6
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 720 mA; Tj = 25 °C
VGS = 10 V; ID = 720 mA; Tj = 150 °C
VGS = 4.5 V; ID = 630 mA; Tj = 25 °C
VDS = 5 V; ID = 720 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
1
µA
µA
µA
mΩ
-
10
-10
850
-
RDSon
drain-source on-state
resistance
635
1400 1800 mΩ
765
1.1
1100 mΩ
gfs
forward
-
S
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 30 V; ID = 0.7 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
0.61
0.07
0.15
28
0.92
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = 30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
5
reverse transfer
capacitance
3
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; ID = 0.7 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
1
1
6
3
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = 0.7 A; VGS = 0 V; Tj = 25 °C
-
-
0.7
8
1.2
-
V
reverse recovery time IS = 0.7 A; dIS/dt = -100 A/s;
VGS = 10 V; VDS = 30 V; Tj = 25 °C
ns
Qr
recovered charge
IS = 0.7 A; dIS/dt = -100 A/µs;
-
2
-
nC
VGS = 10 V; VDS = 30 V; Tj = 25 °C
©
2N7002KQB
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Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
6 / 15
Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
aaa-033489
aaa-033490
-3
-4
-5
-6
3
10
D
I
I
D
(A)
(A)
V
= 10.0 V
GS
min
typ
max
2
10
4.5 V
3.5 V
3.0 V
2.5 V
1
10
10
0
0
1
2
3
4
5
0
1
2
3
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-033491
aaa-033492
2.0
2.0
2.5 V
3.0 V
3.5 V 4.5 V
R
DSon
R
DSon
T = 150 °C
j
1.5
1.5
1.0
0.5
0
1.0
0.5
0
V
= 10.0 V
GS
T = 25 °C
j
0
0.5
1.0
1.5
2.0
2.5
0
4
8
12
16
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 720 mA
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
2N7002KQB
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Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
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Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
aaa-033493
aaa-022667
2.0
2
1.5
1
I
D
(A)
a
T = 25 °C
j
1.5
1.0
0.5
0
T = 150 °C
j
0.5
0
-60
0
1
2
3
4
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = 10 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
aaa-033494
aaa-033495
2
3
10
V
GSth
(V)
max
C
C
iss
(pF)
2
typ
10
C
C
oss
1
0
min
rss
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
2N7002KQB
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Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
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Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
aaa-033496
10
V
(V)
V
GS
DS
8
I
D
6
4
2
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
0.1
0.2
0.3
0.4
0.5
0.6
(nC)
0.7
Q
G
Q
G(tot)
003aaa508
ID = 0.7 A; VDS = 30 V; Tj = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-033497
0.7
I
S
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
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2N7002KQB
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Product data sheet
22 September 2021
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Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
2N7002KQB
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Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
10 / 15
Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
12. Package outline
DFN1110D-3: plastic, leadless extremely thin small outline package with side-wettable flanks (SWF);
3 terminals; 0.65 mm pitch; 1.1 mm x 1 mm x 0.48 mm body
SOT8015
A
1
C
Seating plane
y
C
detail X
X
v
B
C A
C
pin 1
index area
b
(2x)
w
(1)
(1)
(2)
(4x)
y
1
B
C
e
1
2
L (2x)
K
e
1
E
Gx45°
e
2
E
1
u
C
3
(2x)
A
D
1
(1)
(1)
(1)
D
A
u
C
(2x)
T (3x)
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
D
D
1
E
E
1
e
e
e
2
G
K
L
T
u
v
w
y
y1
1
1
max 0.50 0.040 0.30
nom
min
0.95
0.47 0.020 0.25 1.1 0.90
0.44 0.005 0.22 0.87
0.48
0.27 0.22
0.23 0.16 0.05 0.1 0.05 0.05 0.05
0.2 0.20 0.10
0.09
(ref)
mm
1
0.43 0.65 0.58 0.19
0.40
Note
1. Side Wettable Flank, protrusion max. 0.02 mm.
2. Visible depend upon used manufacturing technology.
Dimension A and T are including plating thickness.
sot8015_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
MO-340BA
JEITA
19-12-02
19-12-04
SOT8015
Fig. 18. Package outline DFN1110D-3 (SOT8015)
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2N7002KQB
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Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
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Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN1110D-3 package
SOT8015
1.4
0.2
0.3
0.45
0.35
0.25
0.65
0.6
0.5
0.4
0.12 0.22
0.34 0.44
1.8
0.88 0.78 0.68
0.34
0.34
0.2
0.3
0.4
0.8
0.9
occupied area
solder resist
1.0
solder lands
solder paste
recommended stencil thickness: 0.1 mm
Dimensions in mm
19-11-27
Issue date
sot8015_fr
Fig. 19. Reflow soldering footprint for DFN1110D-3 (SOT8015)
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Product data sheet
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Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20210922
Data sheet status
Change notice
Supersedes
2N7002KQB v.1
Product data sheet
-
-
©
2N7002KQB
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Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
13 / 15
Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
2N7002KQB
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
14 / 15
Nexperia
2N7002KQB
60 V N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information........................................................10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 22 September 2021
©
2N7002KQB
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
22 September 2021
15 / 15
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