BAS16TH [NEXPERIA]
High-speed switching diodeProduction;型号: | BAS16TH |
厂家: | Nexperia |
描述: | High-speed switching diodeProduction |
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BAS16TH
High-speed switching diode
7 December 2018
Product data sheet
1. General description
High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
•
High switching speed: trr ≤ 4 ns
•
•
•
•
•
•
Low leakage current
Repetitive peak reverse voltage VRRM ≤ 100 V
Low capacitance
Small SMD plastic package
High-temperature applications up to 175 °C
AEC-Q101 qualified
3. Applications
•
•
High-speed switching
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRRM
repetitive peak reverse Tj = 25 °C
voltage
-
-
100
V
IF
forward current
reverse voltage
[1]
[2]
-
-
-
-
-
-
-
-
-
-
215
100
1.25
0.5
4
mA
V
VR
VF
IR
forward voltage
reverse current
IF = 150 mA
V
VR = 80 V; Tj = 25 °C
µA
ns
trr
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tamb = 25 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.
[2] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
Nexperia
BAS16TH
High-speed switching diode
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
3
K
A
anode
2
n.c.
K
not connected
cathode
A
n.c.
006aaa764
3
1
2
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BAS16TH
TO-236AB
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23
mm x 1.3 mm x 1 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
BAS16TH
SP%
[1] % = placeholder for manufacturing site code
©
BAS16TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
2 / 10
Nexperia
BAS16TH
High-speed switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
Tj = 25 °C
-
100
V
VR
IF
reverse voltage
forward current
-
-
-
-
-
-
100
215
4
V
[1]
[1]
mA
A
IFSM
non-repetitive peak
forward current
tp = 1 µs; Tj(init) = 25 °C; square wave
tp = 1 ms; Tj(init) = 25 °C; square wave
tp = 1 s; Tj(init) = 25 °C; square wave
tp ≤ 0.5 ms; δ = 0.25
1
A
0.5
500
A
IFRM
repetitive peak forward
current
mA
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
300
175
175
175
mW
°C
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.
aaa-029053
400
P
tot
(mW)
300
200
100
0
-75
25
125
225
T
(°C)
amb
FR4 PCB, standard footprint
Fig. 1. Power derating curve
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
500
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
330
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.
[2] Soldering point of cathode tab.
©
BAS16TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
3 / 10
Nexperia
BAS16TH
High-speed switching diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
715
855
1
Unit
mV
mV
V
VF
forward voltage
IF = 1 mA
[1]
[1]
[1]
[1]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
30
V
IR
reverse current
VR = 25 V; Tj = 25 °C
VR = 80 V; Tj = 25 °C
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
VR = 0 V; f = 1 MHz; Tj = 25 °C
nA
µA
µA
µA
pF
ns
0.5
30
50
Cd
trr
diode capacitance
1.5
4
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tamb = 25 °C
VFRM
peak forward recovery IF = 10 mA; tr = 20 ns
voltage
-
-
1.75
V
[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
aaa-029051
aaa-029052
3
10
600
I
F
I
(mA)
F
(mA)
2
10
400
10
(2)
(3)
(4)
T
= 175 °C
amb
(1)
(5)
200
T
= 150 °C
amb
1
T
= 25 °C
amb
-1
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
(V)
1.4
X
0.5
1.0
1.5
2.0
V
V (V)
F
F
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 25 °C
Fig. 3. Forward current as a function of forward
voltage; typical values
Fig. 2. Forward current as a function of forward
voltage; typical values
©
BAS16TH
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Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
4 / 10
Nexperia
BAS16TH
High-speed switching diode
mbg704
aaa-029054
2
3
2
10
10
10
I
R
T
= 175 °C
= 150 °C
amb
(µA)
I
FSM
(A)
T
amb
10
10
1
T
= 85 °C
= 25 °C
amb
-1
10
-2
-3
-4
-5
-6
10
T
amb
1
10
10
10
10
T
= -40 °C
amb
-1
10
2
3
4
1
10
10
10
10
0
20
40
60
80
100
t
(µs)
V (V)
R
p
Based on square wave currents.
Tj(init) = 25 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
Fig. 4. Non-repetitive peak forward current as a
function of pulse duration; typical values
mbg446
0.8
C
d
(pF
)
0.6
0.4
0.2
0
0
4
8
12
16
V
R
(V)
f = 1 MHz; Tamb = 25 °C
Fig. 6. Diode capacitance as a function of reverse voltage; typical values
©
BAS16TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
5 / 10
Nexperia
BAS16TH
High-speed switching diode
11. Test information
t
r
t
p
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig. 7. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
I
V
90 %
R
S
= 50 Ω
OSCILLOSCOPE
= 50 Ω
V
FR
D.U.T.
R
i
10 %
t
t
t
t
p
r
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig. 8. Forward recovery voltage test circuit and waveforms
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
18-03-12
Fig. 9. Package outline TO-236AB (SOT23)
©
BAS16TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
6 / 10
Nexperia
BAS16TH
High-speed switching diode
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 10. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 11. Wave soldering footprint for TO-236AB (SOT23)
©
BAS16TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
7 / 10
Nexperia
BAS16TH
High-speed switching diode
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20181207
Data sheet status
Change notice
Supersedes
BAS16TH v.1
Product data sheet
-
-
©
BAS16TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
8 / 10
Nexperia
BAS16TH
High-speed switching diode
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
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data sheet
Development
This document contains data from
the objective specification for
product development.
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data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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©
BAS16TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
9 / 10
Nexperia
BAS16TH
High-speed switching diode
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................6
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information........................................................9
© Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 7 December 2018
©
BAS16TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
7 December 2018
10 / 10
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