BAS45A [NEXPERIA]
Low-leakage diodeProduction;
| 型号： | BAS45A |
| 厂家： | 
Nexperia |
| 描述： | Low-leakage diodeProduction |
| 文件： | 总9页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BAS45A
Low-leakage diode
Product data sheet
1996 Mar 13
Supersedes data of June 1994
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS45A
FEATURES
DESCRIPTION
• Continuous reverse voltage:
max. 125 V
Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.
• Repetitive peak forward current:
max. 625 mA
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 μs.
k
a
handbook, halfpage
MAM156
APPLICATION
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
• Low leakage current applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
125
125
250
625
V
V
IF
see Fig.2; note 1
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
tp = 1 μs
tp = 1 ms
tp = 1 s
−
−
4
1
A
A
−
0.5
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C
−
300
+175
175
mW
°C
°C
−65
−
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13
2
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS45A
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
TYP.
MAX.
UNIT
VF
see Fig.3
IF = 1 mA
IF = 10 mA
−
−
−
780 mV
860 mV
IF = 100 mA
1000 mV
IR
reverse current
see Fig.5
VR = 125 V; Emax = 100 lx
VR = 30 V; Tj = 125 °C; Emax = 100 lx
VR = 125 V; Tj = 125 °C; Emax = 100 lx
VR = 125 V; Tj = 150 °C; Emax = 100 lx
f = 1 MHz; VR = 0; see Fig.6
−
−
1
nA
300 nA
500 nA
−
−
2
4
−
μA
pF
μs
Cd
trr
diode capacitance
−
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
1.5
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
thermal resistance from junction to tie-point 8 mm from the body
thermal resistance from junction to ambient lead length 10 mm; note 1
VALUE
300
UNIT
K/W
K/W
Rth j-a
500
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13
3
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS45A
GRAPHICAL DATA
MBG523
MBG522
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2) (3)
200
200
100
100
0
0
0
o
0
100
200
0.5
1.0
1.5
T
( C)
V
(V)
amb
F
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on a printed-circuit board without metallization pad.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(μs)
p
Based on square wave currents;Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Mar 13
4
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS45A
MBG524
MBD456
3
4
10
handbook, halfpage
handbook, halfpage
I
C
R
(nA)
d
(pF)
2
3
10
max
2
10
typ
10
1
1
1
10
0
0
0
50
100
150
o
5
10
15
20
T
( C)
j
V
(V)
R
VR = 125 V.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
Fig.7 Reverse recovery time test circuit and waveforms.
1996 Mar 13
5
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS45A
PACKAGE OUTLINE
0.55
max
1.6
max
3.04
max
25.4 min
25.4 min
MSA212 - 1
Dimensions in mm.
The black marking band indicates the cathode.
Fig.8 SOD68 (DO-34).
1996 Mar 13
6
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS45A
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1996 Mar 13
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
1996 Mar 13
相关型号：
BAS45A/A52A
DIODE 0.25 A, 125 V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
BAS45AL,135
DIODE 0.25 A, 125 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
BAS45ALT/R
DIODE 0.25 A, 125 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
BAS45AT/R
DIODE 0.25 A, 125 V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
©2020 ICPDF网 联系我们和版权申明