BAT54CM [NEXPERIA]

Schottky barrier double diodeProduction;
BAT54CM
型号: BAT54CM
厂家: Nexperia    Nexperia
描述:

Schottky barrier double diodeProduction

文件: 总8页 (文件大小:351K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
understanding,  
Kind regards,  
Team Nexperia  
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BAT54CM  
Schottky barrier double diode  
Product data sheet  
2003 Nov 11  
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
BAT54CM  
FEATURES  
PINNING  
Low forward voltage  
PIN  
1
DESCRIPTION  
Leadless ultra small plastic package  
(1.0 × 0.6 × 0.5 mm)  
Boardspace 1.17 mm2 (approx. 10% of SOT23)  
anode (a1)  
anode (a2)  
2
3
common cathode  
Power dissipation comparable to SOT23.  
APPLICATIONS  
Ultra high-speed switching  
Voltage clamping  
handbook, halfpage  
1
2
Protection circuits  
3
Mobile communications, digital (still) cameras, PDAs  
and PCMCIA cards.  
cathode mark  
DESCRIPTION  
Planar Schottky barrier double diode encapsulated in a  
SOT883 leadless ultra small plastic package.  
Top view  
MARKING  
1
2
TYPE NUMBER  
BAT54CM  
MARKING CODE  
3
S3  
Bottom view  
MLE232  
Fig.1 Simplified outline (SOT883) and symbol.  
ORDERING INFORMATION  
TYPE NUMBER  
PACKAGE  
NAME  
DESCRIPTION  
VERSION  
SOT883  
BAT54CM  
leadless ultra small plastic package; 3 solder lands;  
body 1.0 × 0.6 × 0.5 mm  
2003 Nov 11  
2
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
BAT54CM  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
30  
UNIT  
VR  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
non-repetitive peak forward current  
storage temperature  
V
IF  
200  
300  
600  
+150  
150  
250  
mA  
mA  
mA  
°C  
IFRM  
IFSM  
Tstg  
Tj  
tp 1 s; δ ≤ 0.5  
tp < 10 ms  
65  
junction temperature  
°C  
Ptot  
total power dissipation (per package) Tamb 25 °C; note 1  
mW  
Note  
1. Refer to SOT883 standard mounting conditions (footprint); FR4 with 60 μm copper strip line.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to  
ambient  
note 1  
500  
K/W  
Note  
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.  
Soldering  
Reflow soldering is the only recommended soldering method.  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
see Fig.2;  
IF = 0.1 mA  
240  
320  
400  
500  
800  
2
mV  
mV  
mV  
mV  
mV  
μA  
IF = 1 mA  
IF = 10 mA  
IF = 30 mA  
IF = 100 mA  
IR  
continuous reverse current  
diode capacitance  
VR = 25 V; note 1; see Fig.3  
f = 1 MHz; VR = 1 V; see Fig.4  
Cd  
10  
pF  
Note  
1. Pulsed test: tp 300 μs; δ ≤ 0.02.  
2003 Nov 11  
3
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
BAT54CM  
MSA892  
MSA893  
3
2
3
10  
10  
handbook, halfpage  
I
(1)  
I
(1) (2) (3)  
R
(μA)  
F
(mA)  
2
10  
10  
(2)  
10  
10  
(1)  
1
(2) (3)  
1
1
(3)  
1
10  
10  
0
10  
20  
30  
0
0.4  
0.8  
1.2  
V
(V)  
V
(V)  
R
F
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
Fig.2 Forward current as a function of forward  
voltage; typical values.  
Fig.3 Reverse current as a function of reverse  
voltage; typical values.  
MSA891  
15  
handbook, halfpage  
C
d
(pF)  
10  
5
0
0
10  
20  
30  
V
(V)  
R
f = 1 MHz; Tamb = 25 °C.  
Fig.4 Diode capacitance as a function of reverse  
voltage; typical values.  
2003 Nov 11  
4
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
BAT54CM  
PACKAGE OUTLINE  
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm  
SOT883  
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5  
1 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
1
UNIT  
A
b
b
D
E
e
e
L
L
1
1
1
max.  
0.50  
0.46  
0.20 0.55 0.62 1.02  
0.12 0.47 0.55 0.95  
0.30 0.30  
0.22 0.22  
mm  
0.03  
0.35 0.65  
Note  
1. Including plating thickness  
REFERENCES  
JEDEC  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEITA  
03-02-05  
03-04-03  
SOT883  
SC-101  
2003 Nov 11  
5
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
BAT54CM  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2003 Nov 11  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R76/01/pp7  
Date of release: 2003 Nov 11  
Document order number: 9397 750 11909  

相关型号:

BAT54CM,315

BAT54CM - Schottky barrier double diode DFN 3-Pin
NXP

BAT54CM-TP-HF

Rectifier Diode,
MCC

BAT54CN3

Small Signal Schottky (double) diodes
CYSTEKEC

BAT54CP6FILM

Small signal Schottky diodes
STMICROELECTR

BAT54CPBF

Schottky Diode, 2 x 0.1 A
VISHAY

BAT54CPT

SCHOTTKY DIODE Volts
CHENMKO

BAT54CQ-13-F

SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODES

BAT54CQ-7-F

SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODES

BAT54CRF

200mW SMD Schottky Barrier Diode
TSC

BAT54CRFG

200mW SMD Schottky Barrier Diode
TSC

BAT54CS3

Small Signal Schottky (double) diodes
CYSTEKEC

BAT54CS62Z

Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, TO-236AB,
FAIRCHILD