BC846BPN-Q [NEXPERIA]
65 V, 100 mA NPN/PNP general-purpose transistorProduction;型号: | BC846BPN-Q |
厂家: | Nexperia |
描述: | 65 V, 100 mA NPN/PNP general-purpose transistorProduction |
文件: | 总13页 (文件大小:284K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
9 December 2021
Product data sheet
1. General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted
Device (SMD) plastic package.
NPN/NPN complement: BC846BS-Q
PNP/PNP complement: BC856BS-Q
2. Features and benefits
•
Low collector capacitance
•
•
•
•
•
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
General-purpose switching and amplification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
-
-
-
-
65
V
IC
collector current
DC current gain
DC current gain
100
mA
TR1 (NPN)
hFE
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
200
200
300
290
450
450
TR2 (PNP)
hFE
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
E1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
C1
B2 E2
6
5
4
3
2
B1
TR2
3
C2
collector TR2
emitter TR2
base TR2
TR1
E1
4
E2
1
2
5
B2
B1 C2
sym019
TSSOP6 (SOT363)
6
C1
collector TR1
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BC846BPN-Q
TSSOP6
plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363
2.1 mm x 1.25 mm x 0.95 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
PJ%
BC846BPN-Q
[1] % = placeholder for manufacturing site code
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
2 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions
Per transistor; for the PNP transistor with negative polarity
Min
Max
Unit
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
-
-
-
-
-
-
-
80
V
collector-emitter voltage open base
65
V
emitter-base voltage
collector current
open collector
6
V
100
200
200
200
mA
mA
mA
mW
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
IBM
Ptot
[1]
[1]
Per device
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
300
150
150
150
mW
°C
Tj
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
006aab618
500
P
tot
(mW)
400
300
200
100
0
- 75
- 25
25
75
125
175
(°C)
T
amb
FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint
Fig. 1. Per device: Power derating curve
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
3 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[1]
-
-
-
-
625
230
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
416
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab619
3
10
δ = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
0.20
2
10
0.10
0.02
0.05
10
0.01
0
1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol
TR1 (NPN)
ICBO
Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off
current
VCB = 50 V; IE = 0 A; Tamb = 25 °C
VCB = 30 V; IE = 0 A; Tj = 150 °C
VEB = 6 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
15
5
nA
µA
nA
IEBO
hFE
emitter-base cut-off
current
100
DC current gain
VCE = 5 V; IC = 10 µA; Tamb = 25 °C
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
IC = 100 mA; IB = 5 mA; Tamb = 25 °C
-
280
300
55
-
200
450
100
300
850
-
VCEsat
collector-emitter
saturation voltage
-
-
-
-
mV
mV
mV
mV
200
755
1000
VBEsat
base-emitter saturation IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
voltage
IC = 100 mA; IB = 5 mA; Tamb = 25 °C
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
4 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
Symbol
Parameter
Conditions
Min
Typ
650
-
Max
700
770
-
Unit
mV
mV
pF
VBE
base-emitter voltage
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
VCE = 5 V; IC = 10 mA; Tamb = 25 °C
580
-
-
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
noise figure
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
1.9
VEB = 0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
11
-
-
-
-
-
pF
VCE = 5 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
100
MHz
dB
NF
VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ;
f = 15.7 kHz; Tamb = 25 °C
-
-
1.9
3.1
VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz; Tamb = 25 °C
dB
TR2 (PNP)
ICBO
collector-base cut-off
current
VCB = -50 V; IE = 0 A; Tamb = 25 °C
VCB = -30 V; IE = 0 A; Tj = 150 °C
VEB = -6 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-15
-5
nA
nA
nA
IEBO
hFE
emitter-base cut-off
current
-100
DC current gain
VCE = -5 V; IC = -10 µA; Tamb = 25 °C
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
IC = -100 mA; IB = -5 mA; Tamb = 25 °C
-
270
290
-55
-
200
450
-100
-300
-850
-
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
-
mV
mV
mV
mV
mV
mV
pF
-
-200
-755
-900
-650
-
base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
voltage
-
IC = -100 mA; IB = -5 mA; Tamb = 25 °C
-
base-emitter voltage
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
VCE = -5 V; IC = -10 mA; Tamb = 25 °C
-600
-750
-820
-
-
-
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
noise figure
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
2.3
VEB = -0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
10
-
-
-
-
-
pF
VCE = -5 V; IC = -10 mA; f = 100 MHz;
Tj = 25 °C
100
MHz
dB
NF
VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ;
f = 15.7 kHz; Tamb = 25 °C
-
-
1.6
2.9
VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz; Tamb = 25 °C
dB
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
5 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
006aaa533
006aaa532
600
0.20
I
(mA) = 4.50
4.05
B
I
C
3.60
(A)
0.16
h
FE
3.15
2.70
2.25
1.80
1.35
400
(1)
(2)
(3)
0.12
0.08
0.04
0
0.90
0.45
200
0
10
- 2
- 1
2
3
10
1
10
10
10
(mA)
0
2
4
6
8
10
I
V
(V)
CE
C
VCE = 5 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
Fig. 3. TR1 (NPN): DC current gain as a function of
collector current; typical values
006aaa536
006aaa534
1
1.3
V
BEsat
(V)
V
BE
(V)
1.1
0.8
0.9
0.7
0.5
0.3
0.1
(1)
(2)
(3)
0.6
0.4
10
- 1
2
3
- 1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V; Tamb = 25 °C
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 5. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig. 6. TR1 (NPN): Base-emitter saturation voltage as a
function of collector current; typical values
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
6 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
006aaa535
006aaa537
3
10
10
V
CEsat
(V)
f
T
(MHz)
1
2
10
- 1
10
(1)
(2)
(3)
- 2
10
10
- 1
2
3
2
10
1
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
VCE = 5 V; Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8. TR1 (NPN): Transition frequency as a function
of collector current; typical values
Fig. 7. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aab620
006aaa539
6
15
C
e
(pF)
13
C
(pF)
c
4
2
0
11
9
7
5
0
2
4
6
8
10
0
2
4
6
V
(V)
V
(V)
EB
CB
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
Fig. 9. TR1 (NPN): Collector capacitance as a function Fig. 10. TR1 (NPN): Emitter capacitance as a function of
of collector-base voltage; typical values
emitter-base voltage; typical values
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
7 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
006aaa541
006aaa540
600
- 0.20
I
(mA) = - 2.5
- 2.25
B
I
C
(A)
h
FE
- 2.0
- 1.75
- 1.5
- 1.25
- 0.16
(1)
(2)
400
- 0.12
- 0.08
- 0.04
0
- 1.0
- 0.75
- 0.5
200
(3)
- 0.25
0
- 2
- 10
- 1
2
3
- 10
- 1
- 10
- 10
- 10
(mA)
0
- 2
- 4
- 6
- 8
- 10
(V)
I
V
CE
C
VCE = -5 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 12. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig. 11. TR2 (PNP): DC current gain as a function of
collector current; typical values
006aaa544
006aaa542
- 1
- 1.3
V
BEsat
(V)
V
BE
(V)
- 1.1
- 0.9
- 0.7
- 0.5
- 0.3
- 0.1
- 0.8
(1)
(2)
(3)
- 0.6
- 0.4
- 1
- 10
2
3
- 1
- 10
2
3
- 1
- 10
- 10
- 10
- 1
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
VCE = -5 V; Tamb = 25 °C
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 13. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig. 14. TR2 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
8 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
006aaa543
006aaa545
3
- 10
10
V
CEsat
(V)
f
T
(MHz)
- 1
2
10
- 1
(1)
(2)
(3)
- 10
- 2
- 10
10
- 1
2
3
2
- 10
- 1
- 10
- 10
- 10
- 1
- 10
- 10
I
(mA)
I (mA)
C
C
IC/IB = 20
VCE = -5 V; Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 16. TR2 (PNP): Transition frequency as a function
of collector current; typical values
Fig. 15. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa547
006aab623
10
15
C
c
C
E
(pF)
(pF)
13
8
6
4
2
0
11
9
7
5
0
- 2
- 4
- 6
- 8
- 10
(V)
0
-2
-4
-6
V
CB
V
(V)
EB
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
Fig. 17. TR2 (PNP): Collector capacitance as a function
of collector-base voltage; typical values
Fig. 18. TR2 (PNP): Emitter capacitance as a function of
emitter-base voltage; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
9 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
12. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
2.2 1.35
2.0 1.15
pin 1
index
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
14-10-03
Fig. 19. Package outline TSSOP6 (SOT363)
13. Soldering
2.65
solder lands
solder resist
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 20. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig. 21. Wave soldering footprint for TSSOP6 (SOT363)
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
10 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20211209
Data sheet status
Change notice
Supersedes
BC846BPN-Q v.1
Product data sheet
-
-
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
11 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
equipment, nor in applications where failure or malfunction of an Nexperia
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severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
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products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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Characteristics sections of this document is not warranted. Constant or
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with the same product type number(s) and title. A short data sheet is
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©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
12 / 13
Nexperia
BC846BPN-Q
65 V, 100 mA NPN/PNP general-purpose transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................4
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 10
14. Revision history........................................................11
15. Legal information......................................................12
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 9 December 2021
©
BC846BPN-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
9 December 2021
13 / 13
相关型号:
BC846BR
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
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