BC847BPN [NEXPERIA]
45 V, 100 mA NPN/PNP general-purpose transistorProduction;型号: | BC847BPN |
厂家: | Nexperia |
描述: | 45 V, 100 mA NPN/PNP general-purpose transistorProduction 开关 光电二极管 晶体管 |
文件: | 总13页 (文件大小:260K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
1 July 2022
Product data sheet
1. General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted
Device (SMD) plastic package.
2. Features and benefits
•
Low collector capacitance
•
•
•
•
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
3. Applications
•
General-purpose switching and amplification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
-
-
45
V
IC
collector current
DC current gain
-
-
-
100
450
mA
hFE
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
200
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
E1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
C1 B2
E2
6
5
4
3
2
B1
TR2
3
C2
collector TR2
emitter TR2
base TR2
TR1
4
E2
1
2
5
B2
E1
B1 C2
sym139
TSSOP6 (SOT363)
6
C1
collector TR1
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BC847BPN
TSSOP6
plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363
2.1 mm x 1.25 mm x 0.95 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
13%
BC847BPN
[1] % = placeholder for manufacturing site code
©
BC847BPN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
2 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions
Per transistor; for the PNP transistor with negative polarity
Min
Max
Unit
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
-
-
-
-
-
-
-
-
50
V
collector-emitter voltage open base
45
V
emitter-base voltage
collector current
open collector
5
V
100
200
200
220
250
mA
mA
mA
mW
mW
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
IBM
Ptot
[1]
[2]
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
[2]
-
300
400
150
150
150
mW
mW
°C
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-65
-65
°C
°C
[1] Device mounted on an FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided, 35 μm copper, tin-plated, mounting pad for collector 1 cm².
006aab419
500
P
tot
(mW)
(1)
(2)
400
300
200
100
0
- 75
- 25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, single-sided, 35 μm copper, tin-plated, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint
Fig. 1. Per device: Power derating curves SOT363 (SC-88)
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
3 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
-
-
-
568
500
230
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
-
416
313
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided, 35 μm copper, tin-plated, mounting pad for collector 1 cm².
006aab420
3
10
δ = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
0.20
2
10
0.10
0.02
0.05
10
0.01
0
1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab421
3
10
δ = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
0.20
2
10
0.10
0.02
0.05
10
0.01
0
1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided, 35 μm copper, tin-plated, mounting pad for collector 1 cm2
Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
4 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A; Tamb = 25 °C
IC = 2 mA; IB = 0 A; Tamb = 25 °C
IC = 0 A; IE = 100 µA; Tamb = 25 °C
50
45
5
-
-
-
-
-
-
V
V
V
collector-emitter
breakdown voltage
emitter-base
breakdown voltage
collector-base cut-off
current
VCB = 30 V; IE = 0 A; Tamb = 25 °C
VCB = 30 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
15
5
nA
µA
nA
IEBO
emitter-base cut-off
current
100
hFE
DC current gain
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
200
-
-
-
450
100
300
VCEsat
collector-emitter
saturation voltage
-
-
mV
mV
IC = 100 mA; IB = 5 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
VBE
base-emitter saturation IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
voltage
-
755
-
mV
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
580
655
655
-
700
750
1.5
2.2
-
mV
mV
pF
600
Cc
Ce
fT
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
-
-
pF
VEB = 0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
11
10
-
pF
-
-
pF
VCE = 5 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
100
-
MHz
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
5 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
mgt727
006aab422
600
0.20
I
(mA) = 4.0
B
3.6
2.8
h
FE
I
C
3.2
2.4
(A)
500
2.0
0.15
1.6
400
300
200
100
0
1.2
(1)
0.8
0.10
0.05
0
0.4
(2)
(3)
-1
10
2
3
1
10
10
10
0
1
2
3
4
5
V
(V)
I
(mA)
CE
C
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. NPN transistor: Collector current as a function
of collector-emitter voltage; typical values
Fig. 4. NPN transistor: DC current gain as a function of
collector current; typical values
mgt728
006aab423
1.2
1200
V
BE
(mV)
1000
V
BEsat
(V)
1.0
0.8
0.6
0.4
0.2
(1)
(2)
(1)
(2)
800
600
400
200
0
(3)
(3)
- 2
- 1
2
3
- 1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
C
I
(mA)
C
IC/IB = 20
VCE = 5 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
6 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
mgt729
006aab424
9
4
10
10
V
CEsat
(mV)
f
T
(Hz)
3
2
10
8
10
10
(1)
(3) (2)
7
10
10
10
- 1
2
- 1
2
3
10
1
10
10
1
10
10
10
I (mA)
C
I
(mA)
C
Tamb = 25 °C;
VCE = 5 V;
f = 100 MHz
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 9. Transition frequency as a function of collector
current; typical values
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab425
006aab426
600
- 0.20
I
(mA) = - 3.5
B
- 3.15
- 2.45
- 1.75
I
C
- 2.8
(1)
h
FE
(A)
- 2.1
- 1.4
- 0.15
400
- 1.05
(2)
(3)
- 0.7
- 0.10
- 0.05
0
- 0.35
200
0
- 1
- 10
2
3
- 1
- 10
- 10
- 10
0
- 1
- 2
- 3
- 4
- 5
I
(mA)
V
(V)
CE
C
VCE = -5 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 11. PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
Fig. 10. PNP transistor: DC current gain as a function of
collector current; typical values
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
7 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
mld700
mld702
- 1200
- 1200
V
V
BEsat
BE
(mV)
mV
- 1000
- 1000
(1)
(1)
(2)
(2)
- 800
- 600
- 400
- 200
- 800
(3)
- 600
(3)
- 400
- 200
- 2
- 1
2
I
3
- 1
2
3
- 10
- 10
- 1
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
I
(mA)
C
C
VCE = -5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 12. PNP TR2: Base-emitter voltage as a function of
collector current; typical values
Fig. 13. PNP TR2: Base-emitter saturation voltage as a
function of collector current; typical values
mld701
006aab427
9
4
10
- 10
V
CEsat
(mV)
f
T
(Hz)
3
- 10
8
10
(1)
(3)
2
- 10
(2)
7
10
- 10
- 10
- 1
2
3
- 1
2
- 10
- 1
- 10
- 10
- 10
- 1
- 10
- 10
I
(mA)
C
I
(mA)
C
Tamb = 25 °C;
VCE = -5 V;
f = 100 MHz
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 15. PNP transistor: Transition frequency as a
function of collector current; typical values
Fig. 14. PNP TR2: Collector-emitter saturation voltage
as a function of collector current; typical values
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
8 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
11. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
2.2 1.35
2.0 1.15
pin 1
index
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
14-10-03
Fig. 16. Package outline TSSOP6 (SOT363)
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
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Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
12. Soldering
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 17. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig. 18. Wave soldering footprint for TSSOP6 (SOT363)
©
BC847BPN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
10 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
13. Revision history
Table 8. Revision history
Data sheet ID
BC847BPN v.5
Modification:
Release date
20220701
Data sheet status
Change notice
Supersedes
Product data sheet
-
BC847BPN_4
•
•
Product(s) changed to non-automotive qualification. Please refer to nexperia.com for
automotive (-Q) product alternative(s).
Packing information removed.
BC847BPN_4
BC847BPN_3
BC847BPN_2
20090218
20011026
19990426
Product data sheet
Product specification
-
-
-
BC847BPN_3
BC847BPN_2
BC847BPN_1
Preliminary
specification
BC847BPN_1
19970709
Preliminary
-
-
specification
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
11 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
14. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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data sheet shall define the specification of the product as agreed between
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to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
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Non-automotive qualified products — Unless this data sheet expressly
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
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and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
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whatsoever, Nexperia’s aggregate and cumulative liability towards customer
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specifications and product descriptions, at any time and without notice. This
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Trademarks
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systems or equipment, nor in applications where failure or malfunction
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Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
BC847BPN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
12 / 13
Nexperia
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Package outline.......................................................... 9
12. Soldering................................................................... 10
13. Revision history........................................................11
14. Legal information......................................................12
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Date of release: 1 July 2022
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
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