BC857CQC [NEXPERIA]

45 V, 100 mA PNP general-purpose transistorsProduction;
BC857CQC
型号: BC857CQC
厂家: Nexperia    Nexperia
描述:

45 V, 100 mA PNP general-purpose transistorsProduction

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BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
Rev. 1 — 27 October 2021  
Product data sheet  
1. General description  
PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-  
Mounted Device (SMD) plastic package with side-wettable flanks.  
Table 1. Product overview  
Type number  
Package  
Nexperia  
SOT8009  
NPN complement:  
JEDEC  
BC857AQC  
BC857BQC  
BC857CQC  
MO-340CA  
BC847AQC  
BC847BQC  
BC847CQC  
2. Features and benefits  
High power dissipation capability  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
Smaller footprint compared to conventional leaded SMD packages  
Low package height of 0.5 mm  
3. Applications  
General-purpose switching and amplification  
Space restricted applications  
4. Quick reference data  
Table 2. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
-45  
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BC857AQC  
open base  
-
-
-
-
-
-
-100  
-200  
mA  
mA  
ICM  
single pulse; tp ≤ 1 ms  
VCE = -5 V; IC = -2 mA  
hFE  
125  
220  
420  
-
-
-
250  
475  
800  
BC857BQC  
BC857CQC  
 
 
 
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
5. Pinning information  
Table 3. Pinning  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
B
E
C
C
3
2
emitter  
B
3
collector  
E
sym132  
1
2
Transparent top view  
6. Ordering information  
Table 4. Ordering information  
Type number  
Package  
Name  
Description  
Version  
BC857AQC  
BC857BQC  
BC857CQC  
DFN1412D-3  
plastic leadless ultra small outline package with side-  
wettable flanks (SWF); 3 terminals; 0.8 mm pitch;  
body: 1.4 mm x 1.2 mm x 0.48 mm  
SOT8009  
7. Marking  
Table 5. Marking  
Type number  
Marking code  
BC857AQC  
BC857BQC  
BC857CQC  
9F  
9G  
9H  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
2 / 13  
 
 
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
8. Limiting values  
Table 6. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Conditions  
open emitter  
open base  
Min  
Max  
-50  
Unit  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current  
-
-
-45  
V
open collector  
-
-6  
V
-
-100  
-200  
-100  
360  
450  
150  
150  
150  
mA  
mA  
mA  
mW  
mW  
°C  
ICM  
peak collector current  
peak base current  
total power dissipation  
single pulse; tp ≤ 1 ms  
single pulse; tp ≤ 1 ms  
Tamb ≤ 25 °C  
-
IBM  
-
Ptot  
[1]  
[2]  
-
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
-55  
-65  
°C  
°C  
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided; 35 µm copper; tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB; single-sided; 70 µm copper; tin-plated and standard footprint.  
aaa-032836  
500  
P
tot  
(mW)  
(1)  
(2)  
400  
300  
200  
100  
0
-75  
-25  
25  
75  
125  
175  
(°C)  
T
amb  
(1) FR4 PCB; single-sided; 70 µm copper, standard footprint  
(2) FR4 PCB; single-sided; 35 µm copper, standard footprint  
Fig. 1. Power derating curves DFN1412D-3 (SOT8009)  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
3 / 13  
 
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
9. Thermal characteristics  
Table 7. Thermal characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
348  
278  
Unit  
K/W  
K/W  
Rth(j-a)  
thermal resistance from junction to ambient  
in free air  
[1]  
[2]  
-
-
-
-
[1] Device mounted on an FR4 PCB; single-sided; 35 µm copper; tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB; single-sided; 70 µm copper; tin-plated and standard footprint.  
aaa-032834  
3
10  
Z
duty cycle = 1  
th(j-a)  
(K/W)  
0.75  
0.50  
2
0.33  
10  
0.20  
0.10  
0.05  
0.02  
10  
0.01  
0
1
-5  
10  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; single-sided; 35 µm copper, standard footprint  
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-032835  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.50  
2
10  
0.33  
0.20  
0.10  
0.05  
0.02  
10  
0.01  
0
1
-5  
10  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; single-sided; 70 µm copper, standard footprint  
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
4 / 13  
 
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
10. Characteristics  
Table 8. Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
V(BR)CBO  
collector-base  
breakdown voltage  
IC = -100 µA; IE = 0 A  
-50  
-
-
-
-
V
V
V
V(BR)CES  
V(BR)EBO  
ICBO  
collector-emitter peak  
voltage  
IC = -2 mA; IE = 0 A  
IE = -100 µA; IC = 0 A  
-45  
-6  
-
-
emitter-base  
breakdown voltage  
collector-base cut-off  
current  
VCB = -30 V; IE = 0 A  
-
-
-
-
-
-
-15  
-5  
nA  
μA  
VCB = -30 V; IE = 0 A; Tj = 150 °C  
VEB = -5 V; IC = 0 A  
IEBO  
hFE  
emitter-base cut-off  
current  
-100 nA  
DC current gain  
BC857AQC  
BC857BQC  
BC857CQC  
VCE = -5 V; IC = -2 mA  
125  
220  
420  
-
-
250  
-
475  
-
800  
VCEsat  
collector-emitter  
saturation voltage  
IC = -10 mA; IB = -0.5 mA  
IC = -100 mA; IB = -5 mA  
VCE = -5 V ; IC = -2 mA  
VCE = -5 V ; IC = -10 mA  
-
-300 mV  
-650 mV  
-750 mV  
-820 mV  
[1]  
-
-
VBE  
base-emitter voltage  
[2] -600  
-
[2]  
-
-
VBEsat  
base-emitter saturation IC = -10 mA ; IB = -0.5 mA  
-
-700  
-
mV  
mV  
MHz  
pF  
voltage  
IC = -100 mA ; IB = -5 mA  
[1]  
-
-850  
-
fT  
transition frequency  
collector capacitance  
emitter capacitance  
noise figure  
VCE = -5 V; IC = -10 mA; f = 100 MHz  
100  
-
-
Cc  
Ce  
NF  
VCB = -10 V; IE = ie = 0 A; f = 1 MHz  
VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz  
-
-
-
2
10  
-
-
-
pF  
VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 1 kHz;  
B = 200 Hz  
10  
dB  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
[2] VBE decreases by about 2 mV/K with increasing temperature.  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
5 / 13  
 
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
aaa-028117  
mgt712  
400  
- 1200  
V
BE  
(mV)  
h
FE  
(1)  
- 1000  
300  
200  
100  
0
(1)  
(2)  
- 800  
- 600  
- 400  
- 200  
0
(2)  
(3)  
(3)  
- 2  
- 1  
- 10  
2
I
3
-1  
2
3
- 10  
- 1  
- 10  
- 10  
- 10  
(mA)  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
C
C
VCE = -5 V  
VCE = -5 V  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = -55 °C  
(1) Tamb = -55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig. 4. BC857AQC: DC current gain as a function of  
collector current; typical values  
Fig. 5. BC857AQC: Base-emitter voltage as a function  
of collector current; typical values  
mgt713  
mgt714  
4
- 10  
- 1200  
V
BEsat  
(mV)  
V
(mV)  
CEsat  
- 1000  
(1)  
(2)  
3
2
- 10  
- 800  
- 600  
- 400  
- 200  
0
(3)  
- 10  
(1)  
(3) (2)  
- 10  
- 10  
- 1  
2
3
- 1  
- 10  
2
3
- 1  
- 10  
- 10  
- 10  
- 1  
- 10  
- 10  
- 10  
I
(mA)  
I
C
(mA)  
C
IC/ IB= 20  
IC/ IB= 20  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = -55 °C  
(1) Tamb = -55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig. 6. BC857AQC: Collector-emitter saturation voltage Fig. 7. BC857AQC: Base-emitter saturation voltage as  
as a function of collector current; typical values  
a function of collector current; typical values  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
6 / 13  
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
aaa-028118  
mgt716  
600  
- 1200  
V
BE  
(mV)  
(1)  
h
FE  
- 1000  
(1)  
(2)  
400  
- 800  
- 600  
- 400  
- 200  
0
(2)  
(3)  
(3)  
200  
0
- 2  
- 1  
- 10  
2
I
3
-1  
-10  
2
3
- 10  
- 1  
- 10  
- 10  
- 10  
(mA)  
-1  
-10  
-10  
-10  
I
(mA)  
C
C
VCE = -5 V  
VCE = -5 V  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = -55 °C  
(1) Tamb = -55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig. 8. BC857BQC: DC current gain as a function of  
collector current; typical values  
Fig. 9. BC857BQC: Base-emitter voltage as a function  
of collector current; typical values  
mgt717  
mgt718  
4
- 10  
- 1200  
V
BEsat  
(mV)  
V
CEsat  
- 1000  
(mV)  
(1)  
(2)  
3
2
- 10  
- 800  
- 600  
- 400  
- 200  
0
(3)  
- 10  
(1)  
(3) (2)  
- 10  
- 10  
- 1  
2
3
- 1  
2
3
- 1  
- 10  
- 10  
- 10  
- 10  
- 1  
- 10  
- 10  
- 10  
I
(mA)  
I
C
(mA)  
C
IC/ IB= 20  
IC/ IB= 20  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = -55 °C  
(1) Tamb = -55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig. 10. BC857BQC: Collector-emitter saturation voltage Fig. 11. BC857BQC: Base-emitter saturation voltage as  
as a function of collector current; typical values  
a function of collector current; typical values  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
7 / 13  
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
aaa-028119  
mgt720  
1000  
- 1200  
V
BE  
(mV)  
h
FE  
(1)  
- 1000  
800  
(1)  
(2)  
- 800  
- 600  
- 400  
- 200  
0
600  
400  
200  
0
(2)  
(3)  
(3)  
- 1  
2
3
-1  
-10  
2
3
- 10  
- 1  
- 10  
- 10  
- 10  
(mA)  
-1  
-10  
-10  
-10  
I
(mA)  
I
C
C
VCE = -5 V  
VCE = -5 V  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = -55 °C  
(1) Tamb = -55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig. 12. BC857CQC: DC current gain as a function of  
collector current; typical values  
Fig. 13. BC857CQC: Base-emitter voltage as a function  
of collector current; typical values  
mgt721  
mgt722  
4
- 10  
- 1200  
V
BEsat  
(mV)  
V
(mV)  
CEsat  
- 1000  
(1)  
(2)  
3
2
- 10  
- 800  
- 600  
- 400  
- 200  
0
(3)  
- 10  
(1)  
(3) (2)  
- 10  
- 10  
- 1  
2
3
- 1  
- 10  
2
3
- 1  
- 10  
- 10  
- 10  
- 1  
- 10  
- 10  
- 10  
I
(mA)  
I
C
(mA)  
C
IC/ IB= 20  
IC/ IB= 20  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = -55 °C  
(1) Tamb = -55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig. 14. BC857CQC: Collector-emitter saturation voltage Fig. 15. BC857CQC: Base-emitter saturation voltage as  
as a function of collector current; typical values  
a function of collector current; typical values  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
8 / 13  
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
11. Package outline  
1.4  
0.8  
0.50  
0.44  
0.04  
max  
0.30  
0.22  
0.35  
0.27  
1
2
0.25  
1.2  
0.55  
0.47  
3
1.25  
1.17  
0.22  
0.10  
Dimensions in mm  
21-06-29  
Fig. 16. Package outline DFN1412D-3 (SOT8009)  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
9 / 13  
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
12. Soldering  
Footprint information for reflow soldering of DFN1412D-3 package  
SOT8009  
1.7  
0.5  
0.4  
0.3  
0.3  
0.4  
0.8  
0.65 0.55 0.45  
0.3  
0.4  
0.4  
2.0  
0.6 0.7  
0.95 0.85 0.75  
0.25  
0.25  
1.2  
1.3  
1.4  
recommended stencil thickness: 0.1 mm  
occupied area  
solder resist  
solder paste  
solder land  
Dimensions in mm  
20-03-23  
Issue date  
sot8009_fr  
Fig. 17. Reflow soldering footprint for DFN1412D-3 (SOT8009)  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
10 / 13  
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
13. Revision history  
Table 9. Revision history  
Data sheet ID  
Release date  
Data sheet status  
Change  
notice  
Supersedes  
BC857XQC_SER v.1  
20211027  
Product data sheet  
-
-
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
11 / 13  
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
14. Legal information  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Data sheet status  
Document status Product  
Definition  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1][2]  
status [3]  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
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Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
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or problem which is based on any weakness or default in the customer’s  
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Definitions  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
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with the same product type number(s) and title. A short data sheet is  
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©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
12 / 13  
 
Nexperia  
BC857xQC series  
45 V, 100 mA PNP general-purpose transistor  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 3  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................5  
11. Package outline.......................................................... 9  
12. Soldering................................................................... 10  
13. Revision history........................................................11  
14. Legal information......................................................12  
© Nexperia B.V. 2021. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 27 October 2021  
©
BC857XQC_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 27 October 2021  
13 / 13  

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