BC859CW [NEXPERIA]
PNP general purpose transistorsProduction;
| 型号： | BC859CW |
| 厂家： | 
Nexperia |
| 描述： | PNP general purpose transistorsProduction 放大器 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC859W; BC860W
PNP general purpose transistors
Product data sheet
1999 Apr 12
Supersedes data of 1997 Sep 03
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
DESCRIPTION
1
2
3
base
emitter
APPLICATIONS
collector
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
3
handbook, halfpage
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
3
2
MARKING
1
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC859W
4D∗
4B∗
4C∗
BC860W
4H∗
4F∗
4G∗
1
2
BC859BW
BC859CW
BC860BW
BC860CW
Top view
MAM048
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BC859W
−
−
−30
V
V
BC860W
−50
VCEO
collector-emitter voltage
BC859W
open base
−
−
−
−
−
−
−
−30
V
V
V
BC860W
−45
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
−5
−100
−200
−200
200
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
+150
150
°C
Tamb
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = −30 V
MIN.
TYP. MAX. UNIT
collector cut-off current
−
−
−
−
−
−
−15
−4
nA
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
μA
IEBO
hFE
emitter cut-off current
DC current gain
−100 nA
IC = −2 mA; VCE = −5 V;
see Figs 2 and 3
BC859W; BC860W
BC859BW; BC860BW
BC859CW; BC860CW
220
220
420
−
−
−
−
−
−
−
−
−
10
−
−
800
475
800
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−300 mV
−650 mV
IC = −100 mA; IB = −5 mA; note 1
IC = −2 mA; VCE = −5 V
−
VBE
base-emitter voltage
600
−
750
820
5
mV
mV
pF
IC = −10 mA; VCE = −5 V
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−
−
−
pF
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
MHz
dB
F
noise figure;
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
−
4
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
f = 10 Hz to 15.7 kHz
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
4
dB
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Apr 12
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
MBH727
400
h
FE
V
= −5 V
CE
300
200
100
0
−10
−2
−1
2
3
−10
−1
−10
−10
−10
I
(mA)
C
BC859BW; BC860BW.
Fig.2 DC current gain; typical values.
MBH728
600
h
FE
500
400
V
= −5 V
CE
300
200
100
0
−2
−1
2
3
−10
−10
−1
−10
−10
−10
I
(mA)
C
BC859CW; BC860CW.
Fig.3 DC current gain; typical values.
1999 Apr 12
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
1999 Apr 12
5
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 12
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/04/pp7
Date of release: 1999 Apr 12
Document order number: 9397 750 05583
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