BCM56DS [NEXPERIA]

80 V, 1 A NPN/NPN matched double transistorsProduction;
BCM56DS
型号: BCM56DS
厂家: Nexperia    Nexperia
描述:

80 V, 1 A NPN/NPN matched double transistorsProduction

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BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
10 April 2018  
Product data sheet  
1. General description  
NPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)  
plastic package.  
PNP/PNP complement: BCM53DS  
2. Features and benefits  
High collector current capability IC and ICM  
Reduces component count  
Reduces pick and place costs  
Current gain matching 5%  
Application-optimized pinout  
AEC-Q101 qualified  
3. Applications  
Current mirror  
Differential amplifier  
Linear voltage regulators  
MOSFET drivers  
High-side switches  
Power management  
Amplifiers  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
80  
V
IC  
collector current  
-
-
-
-
1
A
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-
2
hFE  
DC current gain  
VCE = 2 V; IC = 150 mA; Tamb = 25 °C  
[1]  
63  
250  
Per device  
hFE1/hFE2  
DC current gain  
matching  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
0.95  
1
1.05  
 
 
 
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VBE1−VBE2  
base-emitter voltage  
matching  
[2]  
-
-
2
mV  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02  
[2] The smaller of the two values is subtracted from the larger value.  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
6
5
4
3
C1  
E1  
B2  
E2  
B1  
B2  
C2  
E2  
E1  
C1  
base TR1  
TR1  
2
base TR2  
TR2  
3
collector TR2  
emitter TR2  
emitter TR1  
collector TR1  
1
2
B1  
C2  
4
TSOP6 (SOT457)  
aaa-024629  
5
6
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
SOT457  
BCM56DS  
TSOP6  
plastic, surface-mounted package (SC-74)  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code  
BCM56DS  
3D  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
2 / 13  
 
 
 
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC60134).  
Symbol  
Per transistor  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Conditions  
Min  
Max  
Unit  
collector-base voltage  
open emitter  
-
-
-
-
-
-
-
-
-
100  
80  
5
V
collector-emitter voltage open base  
V
emitter-base voltage  
collector current  
open collector  
V
1
A
ICM  
peak collector current  
limiting base current  
peak base current  
total power dissipation  
single pulse; tp ≤ 1 ms  
2
A
IBlim  
0.2  
0.3  
270  
320  
A
IBM  
single pulse; tp ≤ 1 ms  
Tamb ≤ 25 °C  
A
Ptot  
[1]  
[2]  
mW  
mW  
Per device  
Ptot  
total power dissipation  
Tamb ≤ 25 °C  
[1]  
[2]  
-
400  
500  
150  
150  
150  
mW  
mW  
°C  
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
-55  
-65  
°C  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 1 cm2.  
aaa-027468  
600  
P
tot  
(mW)  
(1)  
(2)  
400  
200  
0
-75  
-25  
25  
75  
125  
175  
(°C)  
T
amb  
(1) = FR4 PCB, single sided copper, 1 cm2  
(2) = FR4 PCB, single sided copper, standard footprint  
Fig. 1. Per device: Power derating curves  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
3 / 13  
 
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
in free air  
[1]  
[2]  
-
-
-
-
463  
391  
K/W  
K/W  
Rth(j-sp)  
thermal resistance  
from junction to solder  
point  
-
-
150  
K/W  
Per device  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
in free air  
[1]  
[2]  
-
-
-
-
313  
250  
K/W  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2.  
aaa-027469  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.50  
0.20  
0.33  
2
10  
0.10  
0.02  
0.05  
0.01  
10  
0
1
-5  
10  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, single sided copper, tin-plated and standard footprint  
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;  
typical values  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
4 / 13  
 
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
aaa-027470  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.50  
0.20  
0.33  
2
10  
0.10  
0.02  
0.05  
0.01  
10  
0
1
-5  
10  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, single sided copper, tin-plated, mounting pad for collector 1 cm2  
Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;  
typical values  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
5 / 13  
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
V(BR)CBO  
collector-base  
breakdown voltage  
IC = 100 µA; IE = 0 A  
IC = 2 mA; IB = 0 A  
IC = 0 A; IE = 100 µA  
100  
80  
5
-
-
-
-
-
-
V
V
V
V(BR)CEO  
V(BR)EBO  
ICBO  
collector-emitter  
breakdown voltage  
emitter-base  
breakdown voltage  
collector-base cut-off  
current  
VCB = 30 V; IE = 0 A; Tamb = 25 °C  
VCB = 30 V; IE = 0 A; Tj = 150 °C  
VEB = 5 V; IC = 0 A; Tamb = 25 °C  
-
-
-
-
-
-
100  
10  
nA  
µA  
nA  
IEBO  
hFE  
emitter-base cut-off  
current  
100  
DC current gain  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
VCE = 2 V; IC = 150 mA; Tamb = 25 °C  
VCE = 2 V; IC = 500 mA; Tamb = 25 °C  
63  
63  
40  
-
-
-
-
-
-
[1]  
[1]  
250  
-
VCEsat  
collector-emitter  
IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1]  
500  
mV  
saturation voltage  
VBE  
Cc  
base-emitter voltage  
collector capacitance  
VCE = 2 V; IC = 500 mA; Tamb = 25 °C  
[1]  
-
-
-
1
-
V
VCB = 10 V; IE = 0 A; ie = 0 A;  
f = 1 MHz; Tamb = 25 °C  
4.5  
pF  
fT  
transition frequency  
VCE = 5 V; IC = 50 mA; f = 100 MHz;  
Tamb = 25 °C  
100  
155  
-
MHz  
Per device  
hFE1/hFE2  
DC current gain  
matching  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
0.95  
-
1
-
1.05  
2
VBE1−VBE2  
base-emitter voltage  
matching  
[2]  
mV  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02  
[2] The smaller of the two values is subtracted from the larger value.  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
6 / 13  
 
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
aaa-027471  
aaa-027472  
200  
200  
(1)  
(2)  
h
h
FE  
FE  
150  
150  
(2)  
100  
50  
0
100  
50  
0
(3)  
(1)  
(3)  
-1  
10  
2
3
4
-1  
10  
2
3
4
1
10  
10  
10  
10  
(mA)  
1
10  
10  
10  
10  
I (mA)  
C
I
C
VCE = 2 V  
Tamb = 25 °C  
(1) VCE = 1 V  
(2) VCE = 2 V  
(3) VCE = 5 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -55 °C  
Fig. 4. DC current gain as a function of collector  
current; typical values  
Fig. 5. DC current gain as a function of collector  
current; typical values  
aaa-027473  
aaa-027474  
1.0  
1.5  
IB (mA) = 30  
I
C
27  
21  
(A)  
24  
18  
V
BE  
(V)  
0.8  
15  
9
1.0  
12  
6
0.6  
0.4  
0.2  
0
(1)  
(2)  
(3)  
0.5  
3
0
-1  
10  
2
3
4
0
1
2
3
4
5
1
10  
10  
10  
10  
I (mA)  
C
V
(V)  
CE  
Tamb = 25 °C  
VCE = 2 V  
Tamb = -55 °C  
Tamb = 25 °C  
Tamb = 100 °C  
Fig. 6. Collector current as a function of collector-  
emitter voltage; typical values  
Fig. 7. Base-emitter voltage as a function of collector  
current; typical values  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
7 / 13  
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
aaa-027475  
aaa-027476  
1.5  
1
V
BEsat  
(V)  
V
CEsat  
(V)  
1.0  
0.5  
0
(1)  
(2)  
(3)  
-1  
10  
(2)  
(1)  
(3)  
-2  
10  
-1  
10  
2
3
4
-1  
2
3
4
1
10  
10  
10  
10  
(mA)  
10  
1
10  
10  
10  
10  
I (mA)  
C
I
C
IC/IB = 10  
IC/IB = 10  
(1) Tamb = -55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -55 °C  
Fig. 8. Base-emitter saturation voltage as a function of Fig. 9. Collector-emitter saturation voltage as a  
collector current; typical values  
function of collector current; typical values  
aaa-027477  
aaa-027478  
1
16  
C
C
(pF)  
V
CEsat  
(V)  
12  
-1  
10  
8
4
0
(1)  
(2)  
(3)  
-2  
10  
-1  
2
3
4
10  
1
10  
10  
10  
10  
(mA)  
0
20  
40  
60  
80  
V
100  
(V)  
I
C
CB  
Tamb = 25 °C  
(1) IC/IB = 50  
(2) IC/IB = 20  
(3) IC/IB = 5  
f = 1 MHz  
Tamb = 25 °C  
Fig. 11. Collector capacitance as a function of  
collector-base voltage; typical values  
Fig. 10. Collector-emitter saturation voltage as a  
function of collector current; typical values  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
8 / 13  
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
aaa-027479  
aaa-027480  
3
100  
10  
C
E
(pF)  
80  
f
T
(MHz)  
60  
40  
20  
0
2
10  
10  
-1  
10  
2
3
0
1
2
3
4
5
1
10  
10  
10  
V
(V)  
I (mA)  
C
BE  
f = 1 MHz  
VCE = 5 V  
Tamb = 25 °C  
f = 100 MHz  
Tamb = 25 °C  
Fig. 12. Emitter capacitance as a function of emitter-  
base voltage; typical values  
Fig. 13. Transition frequency as a function of collector  
current; typical values  
11. Test information  
Quality information  
This product has been qualified in accordance with the Automotive Electronics Council (AEC)  
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in  
automotive applications.  
12. Package outline  
3.1  
2.7  
1.1  
0.9  
6
5
4
0.6  
0.2  
3.0  
2.5 1.3  
1.7  
pin 1 index  
1
2
3
0.26  
0.10  
0.40  
0.25  
0.95  
1.9  
Dimensions in mm  
18-03-11  
Fig. 14. Package outline TSOP6 (SOT457)  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
9 / 13  
 
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
13. Soldering  
3.45  
1.95  
0.55  
(6×)  
solder lands  
solder resist  
0.45  
(6×)  
0.95  
0.95  
3.3 2.825  
solder paste  
occupied area  
0.7  
Dimensions in mm  
(6×)  
0.8  
(6×)  
2.4  
sot457_fr  
Fig. 15. Reflow soldering footprint for TSOP6 (SOT457)  
5.3  
1.5  
(4×)  
solder lands  
solder resist  
occupied area  
1.475  
5.05  
0.45  
(2×)  
1.475  
Dimensions in mm  
preferred transport  
direction during soldering  
1.45  
(6×)  
2.85  
sot457_fw  
Fig. 16. Wave soldering footprint for TSOP6 (SOT457)  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
10 / 13  
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
14. Revision history  
Table 8. Revision history  
Data sheet ID  
Release date  
20180410  
Data sheet status  
Change notice  
Supersedes  
BCM56DS v.1  
Product data sheet  
-
-
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
11 / 13  
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
15. Legal information  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Data sheet status  
Suitability for use in automotive applications — This Nexperia product  
has been qualified for use in automotive applications. Unless otherwise  
agreed in writing, the product is not designed, authorized or warranted to  
be suitable for use in life support, life-critical or safety-critical systems or  
equipment, nor in applications where failure or malfunction of an Nexperia  
product can reasonably be expected to result in personal injury, death or  
severe property or environmental damage. Nexperia and its suppliers accept  
no liability for inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
Document  
status [1][2] status [3]  
Product  
Definition  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.nexperia.com.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
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Customers should provide appropriate design and operating safeguards to  
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Definitions  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
Nexperia does not give any representations or warranties as to the accuracy  
or completeness of information included herein and shall have no liability for  
the consequences of use of such information.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
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modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the relevant  
full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
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data sheet shall define the specification of the product as agreed between  
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agreed otherwise in writing. In no event however, shall an agreement be  
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beyond those described in the Product data sheet.  
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In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’ aggregate and cumulative liability towards customer  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
12 / 13  
 
 
Nexperia  
BCM56DS  
80 V, 1 A NPN/NPN matched double transistors  
16. Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 3  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................6  
11. Test information..........................................................9  
12. Package outline.......................................................... 9  
13. Soldering................................................................... 10  
14. Revision history........................................................11  
15. Legal information..................................................... 12  
© Nexperia B.V. 2018. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 10 April 2018  
©
BCM56DS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
10 April 2018  
13 / 13  

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