BCP53T [NEXPERIA]
80 V, 1 A PNP medium power transistors;型号: | BCP53T |
厂家: | Nexperia |
描述: | 80 V, 1 A PNP medium power transistors |
文件: | 总14页 (文件大小:274K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BCP53T series
80 V, 1 A PNP medium power transistors
Rev. 2 — 29 April 2019
Product data sheet
1. Product profile
1.1. General description
PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Type number
Package
Nexperia
SOT223
NPN comlement
JEDEC
BCP53T
SC-73
BCP56T
BCP53-10T
BCP53-16T
BCP56-10T
BCP56-16T
1.2. Features and benefits
•
•
•
•
High collector current capability IC and ICM
Three current gain selections
High power dissipation capability
AEC-Q101 qualified
1.3. Applications
•
•
•
•
•
Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4. Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
VCEO
IC
Parameter
Conditions
Min
Typ
Max
-80
-1
Unit
V
collector-emitter voltage
collector current
open base
-
-
-
-
-
-
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-2
A
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
Symbol
Parameter
DC current gain
BCP53T
Conditions
Min
Typ
Max
Unit
hFE
VCE = -2 V; IC = -150 mA
[1]
[1]
[1]
63
-
-
-
250
160
250
BCP53-10T
BCP53-16T
63
100
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
2. Pinning information
Table 3. Pinning
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
B
C
E
C
4
C
2
collector
emitter
B
3
E
1
2
3
4
collector
sym132
3. Ordering information
Table 4. Ordering information
Type number
Package
Name
Description
Version
BCP53T
SC-73
plastic, surface-mounted package with increased heatsink;
4 leads
SOT223
BCP53-10T
BCP53-16T
4. Marking
Table 5. Marking
Type number
Marking code
BCP53T
BCP53T
BCP53-10T
BCP53-16T
P5310T
P5316T
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BCP53T_SER
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Product data sheet
Rev. 2 — 29 April 2019
2 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Tamb = 25 °C unless otherwise specified.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
-100
-80
-5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
V
open collector
-
V
-
-1
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
-
-2
A
IB
-
-0.2
-0.3
0.6
1
A
IBM
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
A
Ptot
[1]
[2]
[3]
[4]
[5]
-
W
W
W
W
W
°C
°C
°C
-
-
1.3
1.3
1.8
150
150
150
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.
[5] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm.2
aaa-023487
2
P
(W)
tot
(1)
1.6
(2), (3)
(4)
1.2
0.8
0.4
0
(5)
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB; 4-layer copper; 1 cm2
(2) FR4 PCB; single-sided copper; 6 cm2
(3) FR4 PCB; 4-layer copper; standard footprint
(4) FR4 PCB; single-sided copper; 1 cm2
(5) FR4 PCB; single-sided copper; standard footprint
Fig. 1. Power derating curves
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BCP53T_SER
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Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
3 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023488
-10
I
C
(A)
-1
-1
t
= 10 µs
p
100 µs
1 ms
10 ms
100 ms
-10
-10
-10
DC
1 s
DC; FR4 PCB, 4-layer copper;
collector mounting pad 1 cm
2
-2
-3
-1
-10
2
3
-1
-10
-10
-10
V
(V)
CE
FR4 PCB; single-sided copper; standard footprint
single pulse; Tamb = 25 °C
Fig. 2. Safe operating area; junction to ambient; continous and peak collector currents as a funtion of collecor-
emitter voltage
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BCP53T_SER
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Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
4 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
6. Thermal characteristics
Table 7. Thermal characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
209
125
97
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from junction to ambient
in free air
[1]
[2]
[3]
[4]
[5]
-
-
-
-
-
-
-
-
97
70
R(j-sp)
thermal resistance from junction to solder point
18
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.
[5] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm2.
aaa-023489
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
10
0.33
0.20
0.10
0.05
10
0.02
0.01
0
1
-5
10
-4
-3
10
-2
10
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB; single-sided copper; tin-plated and standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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BCP53T_SER
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Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
5 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023490
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
0
1
-5
10
-4
-3
10
-2
10
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023491
2
10
duty cycle = 1
0.75
0.50
Z
th(j-a)
(K/W)
0.33
0.10
0.20
0.05
10
0.02
0.01
0
1
-5
10
-4
-3
10
-2
10
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023492
2
10
duty cycle = 1
0.75
0.50
Z
th(j-a)
(K/W)
0.33
0.10
0.20
0.05
10
0.02
0.01
0
1
-5
10
-4
-3
10
-2
10
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB; 4-layer copper; tin-plated and standard footprint
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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BCP53T_SER
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Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
6 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023493
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.50
0.20
0.33
10
0.10
0.05
0.02
0.01
0
1
-5
10
-4
-3
10
-2
10
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB; 4-layer copper; tin-plated; mounting pad for collector 1 cm2
Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V(BR)CBO
collector-base
IC = -100 µA; IE = 0 A
-100
-
V
breakdown voltage
V(BR)CEO
V(BR)EBO
ICBO
collector-emitter
breakdown voltage
IC = -2 mA; IE = 0 A
IE = -100 µA; IC = 0 A
-80
-5
-
-
V
V
emitter-base
breakdown voltage
collector-base
cut-off current
VCB = -30 V; IE = 0 A
-
-
-
-
-
-
-100 nA
VCB = -30 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A
-10
μA
IEBO
hFE
emitter-base
cut-off current
-100 nA
DC current gain
BCP53T, -10T, -16T
VCE = -2 V; IC = -5 mA
63
-
-
-
-
-
-
-
VCE = -2 V; IC = -500 mA
VCE = -2 V; IC = -150 mA
VCE = -2 V; IC = -150 mA
VCE = -2 V; IC = -150 mA
IC = -500 mA; IB = -50 mA
[1] 40
-
BCP53T
[1] 63
[1] 63
[1] 100
250
BCP53-10T
BCP53-16T
160
250
VCEsat
collector-emitter
[1]
-
-500 mV
saturation voltage
VBE
fT
base-emitter voltage
transition frequency
collector capacitance
VCE = -2 V; IC = -500 mA
[1]
-
-
-1
-
V
VCE = -5 V; IC = -50 mA; f = 100 MHz
VCB = -10 V; IE = ie = 0 A; f = 1 MHz
100
-
140
7
MHz
pF
Cc
-
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
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BCP53T_SER
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Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
7 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023494
aaa-023495
250
200
(1)
(2)
h
FE
h
FE
200
150
100
50
150
100
50
(3)
(1)
(2)
(3)
0
-10
0
-10
-1
2
3
4
-1
2
3
4
-1
-10
-10
-10
-10
(mA)
-1
-10
-10
-10
-10
I (mA)
C
I
C
VCE = -2 V
Tamb = 25 °C
(1) VCE = -1 V
(2) VCE = -2 V
(3) VCE = -5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 8. DC current gain as a function of collector
current; typical values
Fig. 9. DC current gain as a function of collector
current; typical values
aaa-023496
aaa-023497
-1
-1.2
I
(mA) = -15
B
I
-13.5
-10.5
C
V
(V)
-12
-9
BE
(A)
-0.8
-0.9
(1)
-7.5
-4.5
-0.6
-0.4
-0.2
0
-6
-3
(2)
-0.6
(3)
-0.3
-1.5
-4
0
-10
-1
2
3
4
0
-1
-2
-3
-5
-1
-10
-10
-10
-10
I (mA)
C
V
(V)
CE
Tamb = 25 °C
VCE = -2 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 10. Collector current as a function of collector-
emitter voltage; typical values
Fig. 11. Base-emitter voltage as a function of collector
current; typical values
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Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
8 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023498
aaa-023499
-1.2
-1
V
BEsat
(V)
V
CESat
(V)
(1)
(2)
-0.8
-0.4
0
(1)
(2)
(3)
-1
-10
(3)
-2
-10
-1
-10
2
3
4
-1
2
3
4
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 10
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 12. Base-emitter saturation voltage as a function of Fig. 13. Collector-emitter saturation voltage as a
collector current; typical values
function of collector current; typical values
aaa-023501
aaa-023500
25
-1
C
c
(pF)
20
V
CESat
(V)
15
10
5
-1
-10
(1)
(2)
(3)
-2
0
-10
-1
2
3
I
4
0
-20
-40
-60
-80
V
-100
(V)
-10
-1
-10
-10
-10
-10
(mA)
CB
C
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 5
f = 1 MHz; Tamb = 25 °C
Fig. 15. Collector capacitance as a function of collector-
base voltage; typical values
Fig. 14. Collector-emitter saturation voltage as a
function of collector current; typical values
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Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
9 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
aaa-023502
aaa-023503
3
70
10
C
e
(pF)
60
f
T
(MHz)
50
40
30
20
10
0
2
10
10
-1
-10
2
3
0
-1
-2
-3
-4
-5
-1
-10
-10
-10
V
(V)
I
(mA)
EB
C
f = 1 MHz; Tamb = 25 °C
VCE = -5 V
f = 100 MHz; Tamb = 25 °C
Fig. 16. Emitter capacitance as a function of emitter-
base voltage; typical values
Fig. 17. Transition frequency as a function of collector
current; typical values
8. Test information
8.1. Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig. 18. Package outline SOT223 (SC-73)
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Product data sheet
Rev. 2 — 29 April 2019
10 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
10. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 19. Reflow soldering footprint for SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
occupied area
6.2
8.7
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 20. Wave soldering footprint for SOT223 (SC-73)
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Product data sheet
Rev. 2 — 29 April 2019
11 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
11. Revision history
Table 9. Revision history
Document ID
BCP53T_SER v.2
Modifications:
Release date
20190429
Data sheet status
Change notice Supersedes
Product data sheet
-
BCP53T_SER v.1
•
•
Characteristics: breakdown voltages added
The format of this data sheet has been redesigned to comply with the identity guidelines
of Nexperia.
•
Legal texts have been adapted to the new company name where appropriate.
BCP53T_SER v.1
20160705
Product data sheet
-
-
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BCP53T_SER
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Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
12 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
equipment, nor in applications where failure or malfunction of an Nexperia
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no liability for inclusion and/or use of Nexperia products in such equipment or
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12. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
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©
BCP53T_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
13 / 14
Nexperia
BCP53T series
80 V, 1 A PNP medium power transistors
Contents
1. Product profile..............................................................1
1.1. General description......................................................1
1.2. Features and benefits..................................................1
1.3. Applications................................................................. 1
1.4. Quick reference data................................................... 1
2. Pinning information......................................................2
3. Ordering information....................................................2
4. Marking..........................................................................2
5. Limiting values............................................................. 3
6. Thermal characteristics............................................... 5
7. Characteristics..............................................................7
8. Test information..........................................................10
8.1. Quality information.....................................................10
9. Package outline.......................................................... 10
10. Soldering................................................................... 11
11. Revision history........................................................12
12. Legal information......................................................13
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 29 April 2019
©
BCP53T_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 2 — 29 April 2019
14 / 14
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