概述
规格参数
数据手册
替代型号BCP54-10 概述
45 V, 1 A NPN medium power transistorsProduction 双极性晶体管 小信号双极晶体管
BCP54-10 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.29.00.95 |
| 风险等级： | 5.07 | 外壳连接： | COLLECTOR |
| 最大集电极电流 (IC)： | 1 A | 集电极-发射极最大电压： | 45 V |
| 配置： | SINGLE | 最小直流电流增益 (hFE)： | 63 |
| JESD-30 代码： | R-PDSO-G4 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 4 | 最高工作温度： | 150 °C |
| 最低工作温度： | -55 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 极性/信道类型： | NPN | 最大功率耗散 (Abs)： | 1.35 W |
| 认证状态： | Not Qualified | 参考标准： | AEC-Q101; IEC-60134 |
| 表面贴装： | YES | 端子面层： | Tin (Sn) |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| 标称过渡频率 (fT)： | 180 MHz | VCEsat-Max： | 0.5 V |
| Base Number Matches： | 1 |
BCP54-10 数据手册
通过下载BCP54-10数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BCP54 series
45 V, 1 A NPN medium power transistors
Rev. 9 — 6 January 2023
Product data sheet
1. General description
NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD)
plastic package.
2. Features and benefits
•
High collector current capability IC and ICM
•
•
•
Three current gain selections
High power dissipation capability
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Linear voltage regulators
MOSFET drivers
Low-side switches
Battery-driven devices
Power management
Amplifiers
4. Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
VCEO
IC
Parameter
Conditions
Min
Typ
Max
45
1
Unit
V
collector-emitter voltage
collector current
peak collector current
DC current gain
BCP54
open base
-
-
-
-
-
-
A
ICM
single pulse; tp ≤ 1 ms
VCE = 2 V; IC = 150 mA
2
A
hFE
[1]
[1]
[1]
63
-
-
-
250
160
250
BCP54-10
63
BCP54-16
100
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
5. Pinning information
Table 2. Pinning
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
C; C
B
C
E
C
4
2
collector
emitter
B
3
1
2
3
E
4
collector
sym016
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BCP54
SC-73
plastic, surface-mounted package with increased heatsink; 4
leads
SOT223
BCP54-10
BCP54-16
7. Marking
Table 4. Marking
Type number
Marking code
BCP54
BCP54
BCP54-10
BCP54-16
BCP54/10
BCP54/16
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BCP54_SER
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
2 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Tamb = 25 °C unless otherwise specified.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
45
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
45
V
open collector
-
5
V
-
1
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
-
2
A
IB
-
0.3
0.3
0.65
1.00
1.35
150
150
150
A
IBM
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
A
Ptot
[1]
[2]
[3]
-
W
W
W
°C
°C
°C
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.
006aac674
1.5
(1)
P
tot
(W)
(2)
(3)
1.0
0.5
0.0
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves SOT223
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BCP54_SER
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
3 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
9. Thermal characteristics
Table 6. Thermal characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
195
125
93
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from junction to ambient
in free air
[1]
[2]
[3]
-
-
R(j-sp)
thermal resistance from junction to solder point
-
-
16
[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
006aac677
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
10
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; single-sided copper; tin-plated and standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac678
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
10
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
4 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
006aac679
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
10
- 2
- 1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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BCP54_SER
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
5 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
10. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V(BR)CBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A
45
-
-
-
-
V
V
V
V(BR)CEO
V(BR)EBO
ICBO
collector-emitter
breakdown voltage
IC = 2 mA; IB = 0 A
45
5
-
-
emitter-base
breakdown voltage
IE = 100 µA; IC = 0 A
collector-base
cut-off current
VCB = 30 V; IE = 0 A
-
-
-
-
-
-
100
10
nA
µA
nA
VCB = 30 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
IEBO
hFE
emitter-base
cut-off current
100
DC current gain
BCP54
VCE = 2 V; IC = 5 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 5 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 5 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 500 mA
IC = 500 mA; IB = 50 mA
[1] 63
-
-
-
-
-
-
-
-
-
-
-
63
40
250
-
BCP54-10
BCP54-16
[1] 63
63
-
160
40
-
[1] 63
-
100
250
-
40
-
VCEsat
collector-emitter
saturation voltage
[1]
[1]
0.5
V
VBE
Cc
fT
base-emitter voltage
collector capacitance
transition frequency
VCE = 2 V; IC = 500 mA
-
-
1
-
V
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
VCE = 5 V; IC = 50 mA; f = 100 MHz
-
6
pF
100
180
-
MHz
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
©
BCP54_SER
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
6 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
006aac691
300
h
FE
006aaa084
1.6
I
(mA) = 50 45 40 35 30
(1)
(2)
B
I
200
C
(A)
1.2
25
20
15
10
100
(3)
0.8
0.4
0
5
0
10
- 4
- 3
10
- 2
10
- 1
10
1
10
I
(A)
C
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
0
0.4
0.8
1.2
1.6
V
2.0
(V)
CE
Tamb = 25 °C
Fig. 5. DC current gain as a function of collector
current; typical values
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
006aac692
006aac693
1.2
1
V
BE
(V)
V
CEsat
(V)
(1)
0.8
(2)
(3)
- 1
10
(1)
(2)
0.4
(3)
- 2
0.0
10
10
- 1
2
3
4
- 1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 7. Base-emitter voltage as a function of collector Fig. 8. Collector-emitter saturation voltage as a
current; typical values
function of collector current; typical values
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BCP54_SER
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
7 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
11. Test information
11.1. Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig. 9. Package outline SOT223 (SC-73)
©
BCP54_SER
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
8 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 10. Reflow soldering footprint for SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
occupied area
6.2
8.7
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 11. Wave soldering footprint for SOT223 (SC-73)
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
9 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
14. Revision history
Table 8. Revision history
Document ID
BCP54_SER v.9
Modifications:
Release date
20220106
Data sheet status
Change notice Supersedes
Product data sheet
-
BCP54_BCX54_BC54PA v.8
•
Data sheet separated into 3 data sheets
BCP54_BCX54_BC54PA v.8 20111021
Product data sheet
Product data sheet
Product data sheet
-
-
BC635_BCP54_BCX54 v.7
BC635_BCP54_BCX54 v.6
BC635_BCP54_BCX54 v.7
BC635_BCP54_BCX54 v.6
20070604
20050225
CPCN200405 BC635_637_639 v.4
029
BCP54_55_56 v.5
BCP54_55_56 v.4
BC635_637_639 v.4
BCX54_55_56 v.5
BCX54_55_56 v.4
20011010
20030206
20011010
Product specification
Product specification
Product specification
-
-
-
BC635_637_639 v.3
BCX54_55_56 v.4
BCX54_55_56 v.3
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BCP54_SER
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
10 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Nexperia does not accept any liability related to any default, damage, costs
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and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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be suitable for use in life support, life-critical or safety-critical systems or
©
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
11 / 12
Nexperia
BCP54 series
45 V, 1 A NPN medium power transistors
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................6
11. Test information..........................................................8
11.1. Quality information.....................................................8
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information......................................................11
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 6 January 2023
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Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 9 — 6 January 2023
12 / 12
BCP54-10 CAD模型
引脚图
封装焊盘图
BCP54-10 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| BCP54-16 | NEXPERIA | 45 V, 1 A NPN medium power transistorsProduction | 类似代替 |
|
| BCP54,135 | NXP | 45 V, 1 A NPN medium power transistor SC-73 4-Pin | 功能相似 |
|
| BCP54 | ONSEMI | NPN 通用放大器 | 功能相似 |
|
BCP54-10 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BCP54-10,135 | ETC | TRANS NPN 45V 1A SOT223 | 获取价格 |
|
| BCP54-10-Q | NEXPERIA | 45 V, 1 A NPN medium power transistorsProduction | 获取价格 |
|
| BCP54-10-TAPE-13 | NXP | TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | 获取价格 |
|
| BCP54-10-TAPE-7 | NXP | TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | 获取价格 |
|
| BCP54-10E6327 | INFINEON | Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
|
| BCP54-10E6433 | INFINEON | Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
|
| BCP54-10T | NEXPERIA | 45 V, 1 A NPN medium power transistorsProduction | 获取价格 |
|
| BCP54-10T/R | DIOTEC | TRANSISTOR 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 |
|
| BCP54-10TA | DIODES | 1A, 45V, NPN, Si, POWER TRANSISTOR | 获取价格 |
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| BCP54-10TA | ZETEX | Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, | 获取价格 |
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