BF623 [NEXPERIA]

PNP high-voltage transistorsProduction;
BF623
型号: BF623
厂家: Nexperia    Nexperia
描述:

PNP high-voltage transistorsProduction

放大器 晶体管
文件: 总10页 (文件大小:125K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BF621; BF623  
PNP high-voltage transistors  
Product data sheet  
2004 Dec 14  
Supersedes data of 1999 Apr 21  
NXP Semiconductors  
Product data sheet  
PNP high-voltage transistors  
BF621; BF623  
FEATURES  
PINNING  
Low current (max. 50 mA)  
High voltage (max. 300 V).  
PIN  
1
DESCRIPTION  
emitter  
collector  
base  
2
APPLICATIONS  
3
Video output stages.  
DESCRIPTION  
PNP high-voltage transistor in a SOT89 plastic package.  
NPN complements: BF620 and BF622.  
2
1
MARKING  
3
TYPE NUMBER  
BF621  
MARKING CODE  
DF  
DB  
3
2
1
sym079  
BF623  
Fig.1 Simplified outline (SOT89) and symbol.  
ORDERING INFORMATION  
TYPE NUMBER  
PACKAGE  
DESCRIPTION  
NAME  
VERSION  
BF621  
BF623  
SC-62  
plastic surface mounted package; collector pad for good heat  
transfer; 3 leads  
SOT89  
2004 Dec 14  
2
NXP Semiconductors  
Product data sheet  
PNP high-voltage transistors  
BF621; BF623  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
BF621  
300  
250  
V
BF623  
V
VCEO  
collector-emitter voltage  
BF621  
open base  
300  
250  
5  
V
BF623  
V
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
open collector  
V
50  
mA  
mA  
mA  
ICM  
IBM  
Ptot  
100  
50  
Tamb 25 °C  
note 1  
0.5  
W
W
W
°C  
°C  
°C  
note 2  
0.8  
note 3  
1.1  
Tstg  
Tj  
storage temperature  
junction temperature  
ambient temperature  
65  
+150  
150  
+150  
Tamb  
65  
Notes  
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.  
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.  
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.  
2004 Dec 14  
3
NXP Semiconductors  
Product data sheet  
PNP high-voltage transistors  
BF621; BF623  
006aaa238  
1600  
P
tot  
(mW)  
1200  
800  
400  
0
(1)  
(2)  
(3)  
75  
25  
25  
75  
125  
T
175  
(°C)  
amb  
(1) FR4 PCB; 6 cm2 mounting pad for collector.  
(2) FR4 PCB; 1 cm2 mounting pad for collector.  
(3) FR4 PCB; standard footprint.  
Fig.2 Power derating curves.  
2004 Dec 14  
4
NXP Semiconductors  
Product data sheet  
PNP high-voltage transistors  
BF621; BF623  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth(j-a)  
PARAMETER  
CONDITIONS  
in free air  
VALUE  
UNIT  
thermal resistance from junction to  
ambient  
note 1  
note 2  
note 3  
250  
156  
113  
30  
K/W  
K/W  
K/W  
K/W  
Rth(j-s)  
thermal resistance from junction to  
soldering point  
Notes  
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.  
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.  
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.  
006aaa235  
3
10  
Z
th  
(1)  
(3)  
(K/W)  
(2)  
(4)  
2
10  
(5)  
(6)  
(7)  
10  
(8)  
(9)  
(10)  
1
10  
5  
4  
3  
2  
1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
Mounted on FR4 printed-circuit board; standard footprint.  
(1) δ = 1.  
(3) δ = 0.5.  
(5) δ = 0.2.  
(6) δ = 0.1.  
(7) δ = 0.05.  
(8) δ = 0.02.  
(9) δ = 0.01.  
(10) δ = 0.  
(2) δ = 0.75.  
(4) δ = 0.33.  
Fig.3 Transient thermal impedance as a function of pulse time; typical values.  
2004 Dec 14  
5
NXP Semiconductors  
Product data sheet  
PNP high-voltage transistors  
BF621; BF623  
006aaa236  
3
10  
Z
th  
(K/W)  
(1)  
(2)  
2
10  
(3)  
(4)  
(5)  
(6)  
(7)  
10  
(8)  
(9)  
(10)  
1
10  
5  
4  
3  
2  
1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.  
(1) δ = 1.  
(3) δ = 0.5.  
(5) δ = 0.2.  
(6) δ = 0.1.  
(7) δ = 0.05.  
(8) δ = 0.02.  
(9) δ = 0.01.  
(10) δ = 0.  
(2) δ = 0.75.  
(4) δ = 0.33.  
Fig.4 Transient thermal impedance as a function of pulse time; typical values.  
006aaa237  
3
10  
Z
th  
(K/W)  
(1)  
(3)  
2
10  
(2)  
(4)  
(5)  
(6)  
(7)  
10  
(8)  
(9)  
(10)  
1
10  
5  
4  
3  
2  
1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.  
(1) δ = 1.  
(3) δ = 0.5.  
(5) δ = 0.2.  
(6) δ = 0.1.  
(7) δ = 0.05.  
(8) δ = 0.02.  
(9) δ = 0.01.  
(10) δ = 0.  
(2) δ = 0.75.  
(4) δ = 0.33.  
Fig.5 Transient thermal impedance as a function of pulse time; typical values.  
6
2004 Dec 14  
NXP Semiconductors  
Product data sheet  
PNP high-voltage transistors  
BF621; BF623  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
IE = 0 A; VCB = 200 V  
MIN.  
MAX.  
10  
UNIT  
nA  
ICBO  
collector-base cut-off current  
IE = 0 A; VCB = 200 V; Tj = 150 °C  
IC = 0 A; VEB = 5 V  
10  
50  
µA  
IEBO  
hFE  
VCEsat  
Cre  
emitter-base cut-off current  
DC current gain  
nA  
IC = 25 mA; VCE = 20 V  
50  
collector-emitter saturation voltage IC = 30 mA; IB = 5 mA  
800  
1.6  
mV  
pF  
feedback capacitance  
transition frequency  
IC = ic = 0 A; VCE = 30 V; f = 1 MHz  
fT  
IC = 10 mA; VCE = 10 V; f = 100 MHz 60  
MHz  
2004 Dec 14  
7
NXP Semiconductors  
Product data sheet  
PNP high-voltage transistors  
BF621; BF623  
PACKAGE OUTLINE  
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads  
SOT89  
B
A
D
b
p3  
E
H
E
L
p
1
2
3
c
b
p2  
w
M
b
p1  
e
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1  
p2  
p3  
1
1.6  
1.4  
0.48  
0.35  
0.53  
0.40  
1.8  
1.4  
0.44  
0.23  
4.6  
4.4  
2.6  
2.4  
4.25  
3.75  
1.2  
0.8  
mm  
3.0  
1.5  
0.13  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-08-03  
06-03-16  
SOT89  
TO-243  
SC-62  
2004 Dec 14  
8
NXP Semiconductors  
Product data sheet  
PNP high-voltage transistors  
BF621; BF623  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2004 Dec 14  
9
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/04/pp10  
Date of release: 2004 Dec 14  
Document order number: 9397 750 13868  

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