BST61 [NEXPERIA]
PNP Darlington transistorProduction;
| 型号： | BST61 |
| 厂家： | 
Nexperia |
| 描述： | PNP Darlington transistorProduction 开关 晶体管 |
| 文件： | 总9页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BST60; BST61; BST62
PNP Darlington transistors
Product data sheet
2004 Dec 09
Supersedes data of 2001 Feb 20
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
FEATURES
PINNING
PIN
• High current (max. 0.5 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
DESCRIPTION
1
2
3
emitter
collector
base
APPLICATIONS
• Industrial switching applications such as:
– Print hammer
– Solenoid
2
– Relay and lamp driving.
3
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BST50, BST51 and BST52.
1
3
2
1
MARKING
sym081
TYPE NUMBER
BST60
MARKING CODE
BS1
BS2
BS3
BST61
BST62
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
NAME
VERSION
BST60
BST61
BST62
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2004 Dec 09
2
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BST60
−
−
−
−60
V
V
V
BST61
−80
−90
BST62
VCES
collector-emitter voltage
BST60
VBE = 0 V
−
−
−
−
−
−
−
−
−45
−60
−80
−5
V
V
V
V
A
A
BST61
BST62
VEBO
IC
ICM
IB
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
open collector
Tamb ≤ 25 °C; note 1
−1
−2
−100
1.3
mA
W
Ptot
Tstg
Tj
−65
−
+150
150
+150
°C
°C
°C
Tamb
−65
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth(j-a)
Rth(j-s)
thermal resistance from junction to ambient
96
16
K/W
K/W
thermal resistance from junction to soldering point
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 09
3
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICES
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
collector-emitter cut-off current
BST60
VBE = 0 V; VCE = −45 V
VBE = 0 V; VCE = −60 V
VBE = 0 V; VCE = −80 V
IC = 0 A; VEB = −4 V
VCE = −10 V; note 1; see Fig.2
IC = −150 mA
−
−
−
−
−
−
−
−
−50
−50
−50
−50
nA
nA
nA
nA
BST61
BST62
IEBO
hFE
emitter-base cut-off current
DC current gain
1000
2000
−
−
−
−
−
−
IC = −500 mA
−
VCEsat
collector-emitter saturation
voltage
IC = −500 mA; IB = −0.5 mA
−1.3
−1.3
V
V
IC = −500 mA; IB = −0.5 mA;
Tj = 150 °C
−
VBEsat
fT
base-emitter saturation voltage IC = −500 mA; IB = −0.5 mA
−
−
−
−1.9
V
transition frequency
IC = −500 mA; VCE = −5 V;
200
−
MHz
f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
toff
turn-on time
turn-off time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
−
−
500
700
−
−
ns
ns
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Dec 09
4
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
MGD839
6000
h
FE
5000
4000
3000
2000
1000
0
−10
−1
2
3
−1
−10
−10
−10
I
(mA)
C
VCE = −10 V.
Fig.2 DC current gain; typical values.
V
B
V
C
BB
CC
h
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
i
DUT
R1
MGD624
Vi = −10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = 1.8 V; VCC = −10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
5
2004 Dec 09
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2004 Dec 09
6
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
2004 Dec 09
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/05/pp8
Date of release: 2004 Dec 09
Document order number: 9397 750 13878
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