BUK4D122-20P [NEXPERIA]
20 V, P-channel Trench MOSFETProduction;型号: | BUK4D122-20P |
厂家: | Nexperia |
描述: | 20 V, P-channel Trench MOSFETProduction |
文件: | 总15页 (文件大小:322K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK4D122-20P
20 V, P-channel Trench MOSFET
27 March 2023
Product data sheet
1. General Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
Extended temperature range Tj = 175 °C
•
•
•
•
•
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Tin-plated 100% solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Trench MOSFET technology
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-12
-
V
ID
VGS = -4.5 V; Tamb = 25 °C
[1]
-3.2
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -3.2 A; Tj = 25 °C
-
100
122
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
drain
Simplified outline
Graphic symbol
D
D
G
S
D
D
D
S
D
2
drain
1
6
5
4
3
gate
7
2
3
Transparent top view
G
4
source
drain
5
8
6
drain
S
7
drain
DFN2020MD‑6 (SOT1220)
017aaa259
8
source
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK4D122-20P
DFN2020MD‑6 plastic, leadless thermal enhanced ultra thin small outline SOT1220
package with side-wettable flanks (SWF); 6 terminals; 0.65
mm pitch; 2 mm x 2 mm x 0.65 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
6H
BUK4D122-20P
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BUK4D122-20P
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Product data sheet
27 March 2023
2 / 15
Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-12
V
ID
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-3.2
-2
A
-
A
IDM
Ptot
peak drain current
-
-13
550
1.95
10
A
total power dissipation
[2]
[1]
-
mW
W
-
Tsp = 25 °C
-
W
Tj
junction temperature
ambient temperature
storage temperature
non-repetitive drain-
-55
-55
-65
-
175
175
175
5
°C
°C
°C
mJ
Tamb
Tstg
EDS(AL)S
Tj(init) = 25 °C; ID = -0.5 A; DUT in
source avalanche energy avalanche (unclamped)
Source-drain diode
IS
source current
Tamb = 25 °C
HBM
[1]
[3]
-
-
-1.9
A
V
ESD maximum rating
VESD
electrostatic discharge
voltage
2000
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[3] Measured between all pins.
aaa-026120
aaa-026121
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
25
125
225
25
125
225
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
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BUK4D122-20P
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Product data sheet
27 March 2023
3 / 15
Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
aaa-026133
2
-10
I
D
Limit R
= V /I
DS
DSon
D
(A)
t
= 10 µs
p
-10
100 µs
1 ms
-1
-1
10 ms
DC; T = 25 °C
sp
100 ms
-10
2
DC; T
amb
= 25 °C; 6 cm
-2
-10
-1
2
-10
-1
-10
-10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
BUK4D122-20P
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Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
4 / 15
Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
236
67
Max
272
77
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
12
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-026122
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
0.25
0.20
2
10
0.10
0.05
0.02
0.01
10
0
1
-2
-1
2
3
-3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026123
2
10
duty cycle = 1
0.75
0.50
0.25
0.10
Z
th(j-a)
(K/W)
0.33
0.20
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
BUK4D122-20P
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Nexperia B.V. 2023. All rights reserved
Product data sheet
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Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.75 -1
-1.25
IDSS
IGSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -3.2 A; Tj = 25 °C
VGS = -4.5 V; ID = -3.2 A; Tj = 175 °C
VGS = -3 V; ID = -2.6 A; Tj = 25 °C
VDS = -10 V; ID = -3.2 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-1
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
S
-
-10
5
-
-
-2
-
2
RDSon
drain-source on-state
resistance
100
157
125
7
122
191
190
-
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
18.6
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -10 V; ID = -3.2 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
3.3
0.8
0.8
388
56
5
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
39
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -2.6 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5
-
-
-
-
ns
ns
ns
ns
4
turn-off delay time
fall time
36
17
Source-drain diode
VSD
trr
source-drain voltage
IS = -1.9 A; VGS = 0 V; Tj = 25 °C
-
-
-
-0.9
13.7
4.5
-1.2
V
reverse recovery time IS = -1.9 A; dIS/dt = 100 A/µs;
-
-
ns
nC
VGS = 0 V; VDS = -10 V; Tj = 25 °C
Qr
recovered charge
©
BUK4D122-20P
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Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
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Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
aaa-026135
aaa-026136
-3
-4
-5
-6
-12
-10
-4.5 V
I
I
D
D
(A)
(A)
-3.0 V
-8
-10
min
typ
max
-2.5 V
-2.2 V
-4
-10
-10
V
= -1.8 V
GS
0
0
-1
-2
-3
-4
0
-0.5
-1.0
-1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
VDS = -5 V
Tj = 25 °C
function of drain-source voltage; typical values Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-026137
aaa-026138
500
500
-1.8 V
-2.2 V -2.5 V
-3.0 V
R
DSon
R
DSon
(mΩ)
(mΩ)
400
400
300
200
100
0
300
200
100
0
T = 175 °C
j
V
= -4.5 V
GS
T = 25 °C
j
0
-4
-8
-12
0
-2
-4
-6
-8
-10
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = -2.9 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
BUK4D122-20P
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Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
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Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
aaa-026139
aaa-026140
-12
2.0
1.5
1.0
0.5
0
a
I
D
(A)
-8
-4
0
T = 175 °C
j
T = 25 °C
j
0
-1
-2
-3
-4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-026141
aaa-026142
3
-1.5
10
V
GS(th)
(V)
max
typ
C
C
(pF)
iss
-1.0
-0.5
0
2
10
min
C
C
oss
rss
1
10
-1
2
-60
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
(V)
DS
f = 1 MHz; VGS = 0 V
ID = -250 μA; VDS = VGS
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
©
BUK4D122-20P
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Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
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Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
aaa-026143
-5
V
GS
(V)
V
DS
-4
-3
-2
-1
0
I
D
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
aaa-030347
0
1
2
3
4
Q
G
(nC)
VDS = -10 V; ID = -3.2 A
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-026144
-10
I
S
(A)
-8
-6
-4
-2
0
T
j = 175 °C
T
j = 25 °C
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
©
BUK4D122-20P
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Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
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Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
BUK4D122-20P
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Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
10 / 15
Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
A
D
E
A
T (6×)
A
y
1
1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
L
p
y
E
2
C
D
2
4
5
3
2
J
1
e
J
bp (6×)
D
1
e
v
A B
1
6
pin 1
index area
X
E
1
0
2 mm
scale
e
Dimensions (mm are the original dimensions)
Unit bp
min 0.25 1.9 1.0
0.65 0.04 0.35 2.1 1.2
A
A
D
D
1
D
E
E
E
J
J
1
L
T
v
y
y
1
1
2
1
2
p
0.2 1.9 1.1 0.51
0.3 2.1 1.3 0.61
0.2 0.10
0.16 0.1 0.05 0.1
0.3 0.22
nom
max
mm
0.65 0.27 0.64
Note
1. Dimension A is including plating thickness.
sot1220_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
JEITA
18-05-30
18-06-07
SOT1220
Fig. 18. Package outline DFN2020MD‑6 (SOT1220)
©
BUK4D122-20P
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Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
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Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.775
0.285
0.65
2.06
1.25
0.35 (6×)
0.65
1.35
1.05
0.25 (6×)
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD‑6 (SOT1220)
©
BUK4D122-20P
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Product data sheet
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Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20230327
Data sheet status
Change notice
Supersedes
BUK4D122-20P v.2
Modifications:
Product data sheet
-
BUK4D122-20P v.1
•
Complete rework
BUK4D122-20P v.1
20200708
Product data sheet
-
-
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BUK4D122-20P
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Product data sheet
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Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
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products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
BUK4D122-20P
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
14 / 15
Nexperia
BUK4D122-20P
20 V, P-channel Trench MOSFET
Contents
1. General Description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information........................................................10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 27 March 2023
©
BUK4D122-20P
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
27 March 2023
15 / 15
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