BUK6Y33-60P [NEXPERIA]
60 V, P-channel Trench MOSFETProduction;型号: | BUK6Y33-60P |
厂家: | Nexperia |
描述: | 60 V, P-channel Trench MOSFETProduction |
文件: | 总13页 (文件大小:242K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK6Y33-60P
60 V, P-channel Trench MOSFET
21 January 2021
Product data sheet
1. General description
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device
(SMD) plastic package using Trench MOSFET technology.
This product has been designed and qualified to AEC-Q101 standard for use in high-performance
automotive applications such as reverse battery protection.
2. Features and benefits
•
High thermal power dissipation capability
•
•
•
Suitable for thermally demanding environments due to 175 °C rating
Trench MOSFET technology
AEC-Q101 qualified
3. Applications
•
•
•
•
Reverse battery protection
Power management
High-side load switch
Motor drive
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Typ
Max
-60
20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-
[1]
-20
V
VGS = -10 V; Tmb = 25 °C
-
-
-30
110
A
Ptot
total power dissipation Tmb = 25 °C
W
Static characteristics
RDSon drain-source on-state
resistance
VGS = -10 V; ID = -7 A; Tj = 25 °C
-
26
33
mΩ
[1] VGS = -20 V/+5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/+20 V according AEC-Q101 at Tj = 150 °C
Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
S
S
S
G
D
mb
D
2
G
3
4
S
1
2 3 4
mb
mounting base; connected
to drain
017aaa094
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK6Y33-60P
LFPAK56;
plastic, single-ended surface-mounted package; 4 terminals
SOT669
Power-SO8
7. Marking
Table 4. Marking codes
Type number
Marking code
6Y3360P
BUK6Y33-60P
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BUK6Y33-60P
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Nexperia B.V. 2021. All rights reserved
Product data sheet
21 January 2021
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
-60
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
VGS
[1]
-20
-
20
V
ID
VGS = -10 V; Tmb = 25 °C
VGS = -10 V; Tmb = 100 °C
single pulse; tp ≤ 10 µs; Tmb = 25 °C
Tmb = 25 °C
-30
A
-
-21
A
IDM
Ptot
Tj
peak drain current
-
-120
110
175
175
175
A
total power dissipation
junction temperature
ambient temperature
storage temperature
-
W
°C
°C
°C
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
-30
A
A
ISM
single pulse; tp ≤ 10 µs; Tmb = 25 °C
-120
ESD maximum rating
VESD electrostatic discharge
voltage
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
HBM
[2]
-
-
1000
85
V
Tj(init) = 25 °C; ID = -2.8 A; DUT in
mJ
source avalanche energy avalanche (unclamped)
[1] VGS = -20 V/+5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/+20 V according AEC-Q101 at Tj = 150 °C
[2] Measured between all pins.
aaa-030121
aaa-030122
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
25
125
225
25
125
225
T
(°C)
T
(°C)
mb
mb
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Normalized continuous drain current as a
function of mounting base temperature
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Product data sheet
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
aaa-030711
3
-10
I
D
Limit R
= V /I
DS
DSon
D
(A)
t
=
2
p
-10
10 µs
100 µs
-10
DC; T = 25 °C
mb
-1
-1
1 ms
-10
10 ms
100 ms
-2
-10
2
-1
-10
-10
V
(V)
DS
Fig. 3. Safe operating area; junction to mounting base; continuous and peak drain currents as a function of
drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from
junction to mounting
base
-
1.1
1.4
K/W
aaa-031187
10
Z
th(j-mb)
(K/W)
duty cycle = 1
1
0.70
0.50
0.30
0.10
0.05
0.01
-1
10
10
0.02
-2
-5
10
-4
-3
-2
10
-1
10
10
10
1
t
(s)
p
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
BUK6Y33-60P
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Nexperia B.V. 2021. All rights reserved
Product data sheet
21 January 2021
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-60
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS=VGS; Tj = 25 °C
voltage
-1.5
-2
-3
IDSS
drain leakage current
VDS = -60 V; VGS = 0 V; Tj = 25 °C
VDS = -60 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; ID = -7 A; Tj = 25 °C
VGS = -10 V; ID = -7 A; Tj = 175 °C
VGS = -4.5 V; ID = -6.7 A; Tj = 25 °C
VDS = -10 V; ID = -4.8 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-1
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
-
-10
-100
100
33
69
36
-
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
26
55
30
99
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
6.1
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -30 V; ID = -7 A; VGS = -10 V;
Tj = 25 °C
-
-
-
-
-
-
46
69
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
7.3
9.4
-
VDS = -30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
2590
202
118
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -30 V; ID = -7 A; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
9
-
-
-
-
ns
ns
ns
ns
16
81
310
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = -30 A; VGS = 0 V; Tj = 25 °C
-
-
-
-0.7
32
-1.2
V
reverse recovery time IS = -30 A; dIS/dt = 100 A/µs;
-
-
ns
nC
VGS = -10 V; VDS = -30 V; Tj = 25 °C
Qr
recovered charge
18
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BUK6Y33-60P
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Product data sheet
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
aaa-030712
aaa-030713
-3
-4
-5
-6
-50
-10
V
= -10 V
GS
I
D
(A)
I
D
(A)
-40
-30
-20
-10
0
-4.5 V
-3.8 V
-10
Min Typ
Max
-3.4 V
-3.2 V
-10
-10
-3.0 V
-2.8 V
0
-1
-2
-3
-4
0
-0.5
-1.0 -1.5 -2.0
-2.5 -3.0
-3.5
(V)
V
(V)
V
DS
GS
Tj = 25 °C
VDS = -5 V; Tj = 25 °C
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 6. Sub-threshold drain current as a function of
gate-source voltage
aaa-030714
aaa-030715
200
200
-3.0 V
180
R
(mΩ)
DSon
R
DSon
(mΩ)
160
140
120
100
80
150
-3.2 V
-3.4 V
100
-3.8 V
-4.5 V
T = 175 °C
j
60
50
0
40
T = 25 °C
j
20
V
= -10 V
GS
0
0
-10
-20
-30
-40
0
-1
-2
-3
-4
-5
I
D
(A)
V
(V)
GS
Tj = 25 °C
ID = -6.5 A
Fig. 7. Drain-source on-state resistance as a function Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
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BUK6Y33-60P
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Nexperia B.V. 2021. All rights reserved
Product data sheet
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
aaa-030716
aaa-030717
-20
2.5
2.0
1.5
1.0
0.5
0
I
a
D
(A)
-15
-10
-5
0
T = 175 °C
j
T = 25 °C
j
0
-1
-2
-3
-4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = -10 V
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 10. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-030718
aaa-030719
4
-3.5
10
V
GS(th)
(V)
Max
-3.0
C
(pF)
-2.5
-2.0
-1.5
-1.0
-0.5
0
C
iss
Typ
Min
3
10
C
C
oss
rss
2
10
-1
2
-60
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -250 μA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 11. Gate-source threshold voltage as a function of Fig. 12. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
BUK6Y33-60P
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Nexperia B.V. 2021. All rights reserved
Product data sheet
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
aaa-030720
-10
V
(V)
V
GS
DS
-8
I
D
-6
-4
-2
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
10
20
30
40
Q
50
(nC)
G
Q
G(tot)
003aaa508
VDS = -30 V; ID = -10.8 A; Tj = 25 °C
Fig. 14. Gate charge waveform definitions
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
aaa-030721
-8
I
S
(A)
-7
-6
-5
-4
-3
-2
-1
0
T = 175 °C
j
T = 25 °C
j
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
Fig. 15. Source current as a function of source-drain voltage; typical values
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BUK6Y33-60P
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Nexperia B.V. 2021. All rights reserved
Product data sheet
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 16. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
BUK6Y33-60P
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Nexperia B.V. 2021. All rights reserved
Product data sheet
21 January 2021
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
1
b
2
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
Issue date
11-03-25
References
Outline
version
European
projection
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
©
BUK6Y33-60P
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Nexperia B.V. 2021. All rights reserved
Product data sheet
21 January 2021
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
13. Revision history
Table 8. Revision history
Data sheet ID
BUK6Y33-60P v.3
Modifications:
Release date
20210121
Data sheet status
Change notice
Supersedes
Product data sheet
-
BUK6Y33-60P v.2
•
Chapter "Characteristics": Typo correction at parameter tf. Correction of the conditions for the
source-drain diode parameters VSD, trr, Qr.
BUK6Y33-60P v.2
BUK6Y33-60P v.1
20200318
20200316
Product data sheet
Product data sheet
-
-
BUK6Y33-60P v.1
-
©
BUK6Y33-60P
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Product data sheet
21 January 2021
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
14. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
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modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
BUK6Y33-60P
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Nexperia B.V. 2021. All rights reserved
Product data sheet
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Nexperia
BUK6Y33-60P
60 V, P-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Revision history........................................................11
14. Legal information......................................................12
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 January 2021
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