BUK7608-40B [NEXPERIA]
N-channel TrenchMOS standard level FETProduction;
| 型号： | BUK7608-40B |
| 厂家： | 
Nexperia |
| 描述： | N-channel TrenchMOS standard level FETProduction |
| 文件： | 总12页 (文件大小：702K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7608-40B
N-channel TrenchMOS standard level FET
Rev. 04 — 24 September 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
Suitable for standard level gate drive
on-state resistance
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
General purpose power switching
Motors, lamps and solenoids
Automotive systems
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
40
75
V
A
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3;
[1]
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
-
157
241
W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
ID = 75 A; Vsup ≤ 40 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
mJ
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 32 V; Tj = 25 °C; see
Figure 14
-
-
12
-
nC
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 11
6.6
8
mΩ
[1] Continuous current is limited by package.
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
[1]
3
G
mb
mounting base; connected to
drain
mbb076
S
2
1
3
SOT404
(D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7608-40B
D2PAK
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
SOT404
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
40
V
V
V
A
VDGR
VGS
-
40
-20
-
20
ID
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure [1]
3;
101
T
mb = 100 °C; VGS = 10 V; see Figure 1;
[1]
-
-
71
75
A
A
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure [2]
3;
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
-
407
157
175
175
A
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
-55
-55
junction temperature
Source-drain diode
IS
source current
Tmb = 25 °C;
[1]
[2]
-
-
-
101
75
A
A
A
Tmb = 25 °C;
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
407
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
2 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
Table 4.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Avalanche ruggedness
EDS(AL)S non-repetitive
Parameter
Conditions
Min
Max
Unit
ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V;
-
241
mJ
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
003aac081
120
003aac070
120
I
P
der
D
(A)
(%)
80
80
(1)
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
mb
(°C)
T
mb
(°C)
Fig 2. Normalized total power dissipation as a
function of solder point temperature
Fig 1. Continuous drain current as a function of
mounting base temperature
003aac079
3
10
Limit R
= V / I
DS D
DSon
I
D
(A)
t
p
= 10 μs
2
10
100 μs
(1)
1 ms
10
10 ms
100 ms
DC
1
10
−1
2
1
10
10
V
DS
(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-s
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
3 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from mounted on a printed-circuit board;
junction to ambient minimum footprint
-
50
-
K/W
Rth(j-mb)
thermal resistance from see Figure 4
junction to mounting
base
-
-
0.95
K/W
003aac080
1
δ = 0.5
Z
th(j−mb)
(K/W)
0.2
−1
0.1
10
10
10
0.05
0.02
t
p
single pulse
P
δ =
−2
−3
T
t
t
p
T
t
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
4 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
40
36
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; see
3
4
voltage
Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 9; see Figure 10
-
-
-
4.4
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 9; see Figure 10
1
IDSS
drain leakage current
gate leakage current
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
-
-
-
-
-
0.02
1
µA
µA
nA
nA
mΩ
-
500
100
100
15.2
IGSS
2
2
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C; see
Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 12; see Figure 11
-
6.6
8
mΩ
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 25 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; see Figure 14
-
-
-
-
-
-
36
-
nC
nC
nC
pF
pF
pF
9
-
12
-
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
2017
486
213
2689
583
291
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
-
20
51
20
33
4.5
-
-
-
-
-
ns
ns
ns
ns
nH
turn-off delay time
fall time
LD
internal drain
inductance
from drain lead 6 mm from package to
center of die; Tj = 25 °C
from upper edge of drain mounting base to
centre of die; Tj = 25 °C
-
-
2.5
7.5
-
-
nH
nH
LS
internal source
inductance
from source lead 6 mm from package to
source bond pad; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; see
Figure 13
-
0.85
1.2
V
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 20 V; Tj = 25 °C
-
-
53
44
-
-
ns
Qr
nC
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
5 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
003aac076
003aac073
300
60
V
GS
(V) = 10
9.5
20
14
12
I
g
fs
(S)
D
(A)
9.0
8.5
8.0
200
40
7.5
7.0
100
20
6.5
6.0
5.5
5.0
4.5
0
0
0
2
4
6
8
10
(V)
0
20
40
60
V
DS
I (A)
D
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Forward transconductance as a function of
drain current; typical values
003aac077
003aac074
16
100
6.0 6.5 7.0
8.0
I
D
R
(mΩ)
DSon
(A)
75
V
GS
(V) = 10
12
50
25
0
8
4
20
T = 175 °C
25 °C
j
0
100
200
300
0
2
4
6
8
I
D
(A)
V
GS
(V)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
6 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
003aab852
003aab853
−1
−2
−3
−4
−5
−6
5
10
I
V
D
GS(th)
(A)
(V)
min
typ
max
4
10
10
10
10
10
max
typ
3
2
1
min
0
−60
0
60
120
160
0
2
4
6
T (°C)
V
(V)
j
GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Gate-source threshold voltage as a function of
junction temperature
003aac075
003aab851
14
2
R
(mΩ)
DSon
a
12
1.5
10
8
1
0.5
0
6
4
5
10
15
20
−60
0
60
120
180
V
GS
(V)
T (°C)
j
Fig 11. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
7 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
003aac071
003aac072
100
10
V
(V)
GS
I
S
(A)
8
6
4
2
0
V
DD
= 14 V
75
V
= 32 V
DD
50
25
0
T = 175 °C
25 °C
j
0.0
0.3
0.6
0.9
1.2
0
10
20
30
40
V
(V)
Q (nC)
G
SD
Fig 13. Reverse diode current as a function of reverse
diode voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
003aac078
3000
C
iss
C
(pF)
2000
1000
0
C
oss
C
rss
−2
−1
2
10
10
1
10
10
V
DS
(V)
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
8 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig 16. Package outline SOT404 (D2PAK)
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
9 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7608-40B_4
Modifications:
20080924
Product data sheet
-
BUK75_7608-40B_3
• Type number BUK7608-40B separated from data sheet BUK75_7608-40B_3
BUK75_7608-40B_3
BUK75_7608-40B_2
BUK75_7608_40B-01
20071128
20071116
20030319
Product data sheet
Product data sheet
Product data sheet
-
-
-
BUK75_7608-40B_2
BUK75_7608_40B-01
-
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
10 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
©
BUK7608-40B_4
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 24 September 2008
11 of 12
BUK7608-40B
Nexperia
N-channel TrenchMOS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .11
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 24 September 2008
相关型号：
BUK7608-55A/T3
TRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
NXP
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