BUK7K17-80E [NEXPERIA]
Dual N-channel 80 V, 17 mΩ standard level MOSFETProduction;型号: | BUK7K17-80E |
厂家: | Nexperia |
描述: | Dual N-channel 80 V, 17 mΩ standard level MOSFETProduction |
文件: | 总12页 (文件大小:255K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
10 May 2018
Product data sheet
1. General description
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for
use in high performance automotive applications.
2. Features and benefits
•
Dual MOSFET
•
•
•
•
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
•
•
•
•
12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Limiting values FET1 and FET2
VDS
ID
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
-
-
-
-
-
-
80
21
64
V
VGS = 10 V; Tmb = 25 °C; Fig. 2
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
W
Static characteristics FET1 and FET2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 11
-
-
-
12.5
10.4
37.1
16.7
mΩ
nC
nC
Dynamic characteristics FET1 and FET2
QGD gate-drain charge
ID = 10 A; VDS = 64 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
Source-drain diode FET1 and FET2
Qr recovered charge
IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
8
7
6
5
S1
G1
S2
G2
D2
D2
D1
D1
source1
gate1
D1
D2
D2
D1
2
3
source2
gate2
4
5
drain2
drain2
drain1
drain1
S1
G1
S2
G2
mbk725
6
1
2
3
4
7
LFPAK56D (SOT1205)
8
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK7K17-80E
LFPAK56D
plastic, single ended surface mounted package (LFPAK56D); 8
leads
SOT1205
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK7K17-80E
71780E
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
2 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Limiting values FET1 and FET2
VDS
VDGR
VGS
Ptot
ID
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
-
80
V
RGS = 20 kΩ
-
80
V
DC; Tj ≤ 175 °C
-20
20
V
Tmb = 25 °C; Fig. 1
-
64
W
A
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
21
-
15
A
IDM
Tstg
Tj
peak drain current
storage temperature
junction temperature
-
84
A
-55
-55
175
175
°C
°C
Source-drain diode FET1 and FET2
IS
source current
Tmb = 25 °C
-
-
21
84
A
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness FET1 and FET2
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 21 A; Vsup ≤ 80 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[1] [2]
-
116
mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
03aa16
aaa-026831
120
25
20
15
10
5
I
D
(A)
P
der
(%)
80
40
0
0
0
50
100
150
200
0
25
50
75 100 125 150 175 200
(°C)
T
T
(°C)
mb
mb
VGS ≥ 10 V
Fig. 2. Continuous drain current as a function of
mounting base temperature, FET1 and FET2
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
3 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
aaa-026829
2
10
I
D
Limit R
= V / I
DS
DSon
D
(A)
t
p
= 10 µs
100 µs
10
DC
1
1 ms
10 ms
100 ms
-1
10
-1
2
3
10
1
10
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and
FET2
aaa-026828
2
10
I
AL
(A)
10
(1)
(2)
(3)
1
-1
10
-2
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) Tj (init) = 25°C; (2) Tj (init) = 150°C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
4 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
2.36
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
-
95
-
K/W
003aaj748
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
0.02
t
p
-1
P
10
δ =
T
single shot
t
t
p
T
-2
10
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and
FET2
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
5 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics FET1 and FET2
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
80
72
2.4
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;
3
4
voltage
Fig. 10
ID = 1 mA; VDS=VGS; Tj = -55 °C;
Fig. 10
-
-
-
4.5
-
V
V
ID = 1 mA; VDS=VGS; Tj = 175 °C;
Fig. 10
1
IDSS
drain leakage current
gate leakage current
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.02
1
µA
µA
nA
nA
mΩ
-
500
100
100
16.7
IGSS
2
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 11
12.5
VGS = 10 V; ID = 10 A; Tj = 175 °C;
Fig. 12
-
-
42
mΩ
Dynamic characteristics FET1 and FET2
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 10 A; VDS = 64 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
-
-
-
-
32.4
7.1
-
-
-
nC
nC
nC
10.4
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
1701 2262 pF
Coss
Crss
174
104
208
142
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 60 V; RL = 5 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
8.1
-
-
-
-
ns
ns
ns
ns
11.1
22.5
13.4
turn-off delay time
fall time
Source-drain diode FET1 and FET2
VSD
trr
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
-
0.8
1.2
V
reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
30.1
37.1
-
-
ns
nC
VDS = 25 V; Tj = 25 °C
Qr
recovered charge
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
6 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
aaa-026830
aaa-026832
40
60
6 V
5.5 V
10 V
I
D
R
(mΩ)
5 V
DSon
(A)
50
30
20
10
0
40
30
20
10
0
V
= 4.5 V
GS
4 V
0
1
2
3
4
0
4
8
12
16
V (V)
GS
20
V
DS
(V)
Tj = 25 °C
Tj = 25 °C; ID = 10 A
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical
values, FET1 and FET2
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values, FET1
and FET2
aaa-026833
003aah028
-1
80
10
I
D
I
D
(A)
(A)
-2
10
60
40
20
0
typ
max
min
-3
-4
-5
-6
10
10
10
10
175°C
3
T = 25°C
j
0
2
4
6
0
1
2
4
5
6
(V)
7
V
(V)
GS
V
GS
VDS = 12 V
Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values,
FET1 and FET2
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage, FET1 and FET2
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
7 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
003aah027
aaa-026834
60
5
R
(mΩ)
DSon
V
GS(th)
(V)
4.5 V
5 V
50
40
30
20
10
0
max
4
typ
3
2
1
min
6 V
V
= 10 V
GS
0
-60
0
60
120
180
0
10
20
30
40
T ( C)
I
(A)
°
D
j
Tj = 25 °C
ID = 1 mA ; VDS = VGS
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values, FET1 and FET2
Fig. 10. Gate-source threshold voltage as a function of
junction temperature, FET1 and FET2
003aaj817
aaa-026835
10
3
V
(V)
GS
a
8
6
4
2
0
2.4
V
= 14 V
DS
64 V
1.8
1.2
0.6
0
-60
0
60
120
180
0
10
20
30
Q
40
Tj °C)
(
(nC)
G
Tj = 25 °C; ID = 10 A
Fig. 13. Gate-source voltage as a function of gate
charge; typical values, FET1 and FET2
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature,
FET1 and FET2
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
8 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
aaa-026836
4
10
V
C
DS
(pF)
I
D
C
iss
3
2
10
10
V
V
GS(pl)
GS(th)
C
oss
V
GS
Q
GS2
C
rss
Q
GS1
Q
GS
Q
GD
G(tot)
Q
003aaa508
10
10
Fig. 14. Gate charge waveform definitions
-1
2
1
10
10
V
DS
(V)
VGS = 0 V; f = 1 MHz
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values, FET1 and FET2
aaa-026837
60
I
S
(A)
45
30
15
0
175°C
0.4
T = 25°C
j
0
0.2
0.6
0.8
1
(V)
1.2
V
SD
VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values,
FET1 and FET2
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
9 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
11. Package outline
Plastic single ended surface mounted package LFPAK56D; 8 leads
SOT1205
E
A
A
b
c
1
1
L
1
mounting
base
D
1
D
D
2
H
L
1
2
3
4
X
b
(8x)
e
c
E
1
w
A
E
2
C
A
1
θ
L
p
y
C
detail X
0
2.5
5 mm
scale
Dimensions
Unit
D
(ref)
2
(1)
(1)
(1)
E
(1)
A
A
b
b
c
c
D
D
1
E
E
e
H
L
L
L
p
w
y
θ
1
1
1
1
2
1
°
8
0
max 1.05 0.1 0.50 4.4 0.25 0.30 4.70 4.55 3.5 5.30 1.8 0.85
nom
min 1.02 0.0 0.35 4.1 0.19 0.24 4.45 4.35 3.4 4.95 1.6 0.60
6.2 1.3 0.55 0.85
5.9 0.8 0.30 0.40
mm
1.27
0.25 0.1
°
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
sot1205_po
Issue date
References
Outline
version
European
projection
IEC
JEDEC
JEITA
14-08-21
14-10-28
SOT1205
Fig. 17. Package outline LFPAK56D (SOT1205)
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
10 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
12. Legal information
Data sheet status
Document status Product
Definition
[1][2]
status [3]
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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agreed otherwise in writing. In no event however, shall an agreement be
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beyond those described in the Product data sheet.
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Limited warranty and liability — Information in this document is believed
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representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
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Notwithstanding any damages that customer might incur for any reason
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for the products described herein shall be limited in accordance with the
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
©
BUK7K17-80E
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
11 / 12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Package outline........................................................ 10
12. Legal information.......................................................11
© Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 10 May 2018
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BUK7K17-80E
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Nexperia B.V. 2018. All rights reserved
Product data sheet
10 May 2018
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