BUK7M3R3-40H [NEXPERIA]
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33Production;型号: | BUK7M3R3-40H |
厂家: | Nexperia |
描述: | N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33Production |
文件: | 总11页 (文件大小:280K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
29 January 2019
Product data sheet
1. General description
Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9
TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high
performance automotive applications.
2. Features and benefits
•
Fully automotive qualified to AEC-Q101 at 175 °C
Trench 9 superjunction technology:
Low power losses, high power density
LFPAK copper clip package technology:
•
•
•
•
•
High robustness and reliability
Gull wing leads for high manufacturability and AOI
•
Repetitive avalanche rated
3. Applications
•
•
•
•
•
12 V automotive systems
Powertrain, chassis, body and infotainment applications
Medium/Low power motor drive
DC-DC systems
LED lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
40
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
-
ID
[1]
80
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
101
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
1.8
2.6
6.6
21
3.3
13.2
-
mΩ
nC
nC
QGD
gate-drain charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
-
Source-drain diode
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Fig. 17
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
-
0.68
-
[1] 80A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
D
S
2
G
3
4
mbb076
mb
Mounting base; connected to
drain
1
2
3
4
LFPAK33 (SOT1210)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK7M3R3-40H
LFPAK33
Plastic, single ended surface mounted package (LFPAK33); 8
leads; 0.65 mm pitch
SOT1210
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK7M3R3-40H
73H340
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Ptot
Parameter
Conditions
Min
Max
Unit
drain-source voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
-
40
V
DC; Tj ≤ 175 °C
-10
20
V
Tmb = 25 °C; Fig. 1
-
101
80
W
A
ID
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
-
-
80
A
IDM
Tstg
Tj
peak drain current
storage temperature
junction temperature
-
475
175
175
A
-55
-55
°C
°C
Source-drain diode
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BUK7M3R3-40H
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Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
2 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
Symbol
IS
Parameter
Conditions
Min
Max
80
Unit
A
source current
peak source current
Tmb = 25 °C
-
-
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
475
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 80 A; Vsup ≤ 40 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[2] [3]
-
57
mJ
[1] 80A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
03aa16
aaa-028618
120
120
100
80
60
40
20
0
I
D
(A)
P
der
(%)
80
(1)
40
0
0
50
100
150
200
0
25
50
75 100 125 150 175 200
T
mb
(°C)
T
(°C)
mb
VGS ≥ 10 V
(1) 80A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
aaa-028608
3
10
I
D
(A)
Limit R
= V / I
DS
DSon
D
t
p
= 10 µs
2
10
DC
100 µs
10
1 ms
1
10 ms
100 ms
-1
10
-1
2
10
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
©
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
3 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
aaa-028609
2
10
I
AL
(A)
(1)
10
(2)
(3)
1
-1
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 5
junction to mounting
base
-
1.3
1.48
K/W
aaa-028610
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
10
10
0.05
0.02
t
p
P
single shot
δ =
T
-2
-3
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -40 °C
40
-
43
-
-
V
V
40.5
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BUK7M3R3-40H
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Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
4 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
Symbol
Parameter
Conditions
Min
36
Typ
40
3
Max
-
Unit
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;
2.4
3.6
V
voltage
Fig. 10
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9
ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 16 V; VGS = 0 V; Tj = 125 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
4.3
-
V
1
-
V
IDSS
drain leakage current
gate leakage current
-
0.07
0.94
80
2
1
µA
µA
µA
nA
nA
mΩ
-
10
500
100
100
3.3
-
IGSS
-
-
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
1.8
2.6
VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 12
2.5
2.8
3.5
0.3
4
5.3
5.8
7.2
2
mΩ
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 12
4.4
5.5
0.8
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12
RG
gate resistance
f = 1 MHz; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
-
-
-
-
-
32
9
45
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
14
6.6
13.2
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
2169 3037 pF
Coss
Crss
592
113
829
250
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
-
-
-
-
8.4
7.3
19
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
9.1
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
0.82
27
1.2
-
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
ns
Qr
S
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Fig. 17
-
-
-
21
-
-
-
nC
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
0.68
0.49
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
©
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
5 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
aaa-028611
aaa-028612
120
12
I
D
R
DSon
(A)
(mΩ)
10 V
6 V
5 V
90
60
30
0
9
6
3
0
5.5 V
V
=4.5 V
4 V
GS
0
1
2
3
DS
4
0
5
10
15
GS
20
V
(V)
V
(V)
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-028613
aaa-018139
120
5
I
V
GS(th)
(V)
D
(A)
4
3
2
1
0
90
60
30
0
Max
Typ
Min
175°C
-55°C
T =25°C
j
0
1
2
3
4
5
V
6
(V)
7
-60 -30
0
30
60
90 120 150 180
T (°C)
GS
j
VDS = 8 V
ID = 1 mA ; VDS = VGS
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
©
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
6 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
aaa-018138
aaa-028614
-1
10
12
I
R
(mΩ)
D
DSon
4.5 V
5 V
(A)
10
8
-2
-3
-4
-5
-6
10
Min
Typ
Max
10
10
10
10
5.5 V
6
6 V
4
2
V
GS
= 10 V
0
0
1
2
3
4
5
0
20
40
60
80
100
(A)
120
V
(V)
I
GS
D
Tj = 25 °C; VDS = 5 V
Tj = 25 °C
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
aaa-026897
aaa-028615
2.4
10.0
a
V
GS
(V)
2
8.0
6.0
4.0
2.0
0.0
1.6
1.2
0.8
0.4
0
V
DS
= 14 V
32 V
-60 -30
0
30
60
90 120 150 180
T (°C)
0
10
20
30
G
40
Q
(nC)
j
Tj = 25 °C; ID = 25 A
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
©
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
7 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
aaa-028616
4
10
V
C
DS
(pF)
I
D
C
C
iss
3
2
10
10
V
V
GS(pl)
oss
GS(th)
V
GS
C
rss
Q
GS2
Q
GS1
Q
GS
Q
GD
G(tot)
Q
003aaa508
10
10
Fig. 14. Gate charge waveform definitions
-1
2
1
10
10
V
DS
(V)
VGS = 0 V; f = 1 MHz
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaf444
aaa-028617
150
120
90
60
30
0
I
S
I
D
(A)
(A)
t
rr
t
t
b
a
0
0.25 I
RM
175°C
T = 25°C
j
t
t
I
b
a
RM
S =
0
0.2
0.4
0.6
0.8
1
(V)
1.2
t (s)
V
SD
VGS = 0 V
Fig. 17. Reverse recovery timing definition
Fig. 16. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
©
BUK7M3R3-40H
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Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
8 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
11. Package outline
Plastic single ended surface mounted package (LFPAK33); 8 leads
SOT1210
E
A
e
1
A
c
1
b
1
L
1
D
2
mounting
base
D
1
(D)
H
E
1
L
1
4
X
b
w
A
e
c
A
C
1
Lp
y
C
detail X
0
1
2.5
5 mm
scale
Dimensions
(1)
(1)
(1)
(1)
E
Unit
A
A
b
b
1
c
c
D ref
2.60
D
D
E
e
e
H
L
L
L
p
w
y
1
1
2
1
1
1
max 0.90 0.10 0.35 2.4 0.20 0.30
nom
2.35
1.90
3.40 2.45
3.20 2.00
3.40 0.65 0.25 0.50
3.20 0.45 0.13 0.30
mm
0.50
0.65 0.65
0.20 0.10
0.80 0.00 0.25 2.2 0.10 0.20
min
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
sot1210_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-04-25
16-08-09
SOT1210
Fig. 18. Package outline LFPAK33 (SOT1210)
©
BUK7M3R3-40H
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Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
9 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
12. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
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publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
10 / 11
Nexperia
BUK7M3R3-40H
N-channel 40 V, 3.3 mΩ standard level MOSFET in LFPAK33
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................4
11. Package outline.......................................................... 9
12. Legal information......................................................10
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 29 January 2019
©
BUK7M3R3-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 January 2019
11 / 11
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