BUK9635-55A [NEXPERIA]
N-channel TrenchMOS logic level FETProduction;
| 型号： | BUK9635-55A |
| 厂家： | 
Nexperia |
| 描述： | N-channel TrenchMOS logic level FETProduction 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：834K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK9635-55A
N-channel TrenchMOS logic level FET
Rev. 2 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
-
-
55
34
85
V
ID
Tmb = 25 °C
A
Ptot
total power dissipation
W
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
-
-
24
26
32
35
mΩ
mΩ
VGS = 5 V; ID = 25 A;
Tj = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive
ID = 14 A; Vsup ≤ 25 V;
RGS = 50 Ω; VGS = 5 V;
-
-
49
mJ
drain-source
avalanche energy
T
j(init) = 25 °C;
unclamped
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base;
connected to drain
mbb076
S
2
1
3
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK9635-55A
D2PAK
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
SOT404
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
55
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
VDGR
VGS
-
55
V
-10
-
10
V
ID
Tmb = 100 °C
Tmb = 25 °C
24
A
-
34
A
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; pulsed
Tmb = 25 °C
-
133
85
A
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
-
W
°C
°C
V
-55
-55
-15
175
175
15
VGSM
pulsed; tp ≤ 50 µs
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
34
A
A
ISM
pulsed; Tmb = 25 °C
133
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 14 A; Vsup ≤ 25 V; RGS = 50 Ω;
-
49
mJ
VGS = 5 V; Tj(init) = 25 °C; unclamped
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
2 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
003aaf283
003aaf284
100
100
P
der
I
D
(%)
80
(%)
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
mb
(°C)
T
mb
(°C)
VGS ≥ 5 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
003aaf285
003aaf299
3
10
120
I
WDSS
(%)
DM
R
DS(on)
= V / I
DS D
(A)
2
10
80
40
0
t
= 1 μs
p
10 μs
100 μs
10
1
D.C.
1 ms
10 ms
2
1
10
10
20
60
100
140
180
(°C)
T
V
DS
(V)
(mb)
T
mb = 25 °C
ID = 75 A
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4. Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
3 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
003aaf300
2
10
I
AV
(A)
10
25 °C
T prior to avalanche = 150 °C
j
1
10
−3
−2
−1
10
10
1
10
t
(ms)
AV
unclamped inductive load
Fig 5. Single-shot avalanche rating; avalanche current as a function of avalanche period
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to mounting base
-
-
1.8
K/W
Rth(j-a)
thermal resistance from
junction to ambient
minimum footprint; FR4 board
-
50
-
K/W
003aaf286
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
t
p
P
δ =
T
−1
0.05
0.02
10
10
t
t
p
0
T
−2
10
−7
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
10
(s)
t
p
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
4 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 mV; Tj = 25 °C
ID = 0.25 mA; VGS = 0 mV; Tj = -55 °C
55
-
-
V
50
-
-
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C
-
-
2.3
2
V
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C
1
1.5
-
V
ID = 1 mA; VDS = VGS; Tj = 175 °C
0.5
-
V
IDSS
drain leakage current
gate leakage current
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
-
-
-
-
-
-
-
-
0.05
-
10
500
100
100
38
32
70
35
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
IGSS
2
2
RDSon
drain-source on-state
resistance
26.5
24
-
26
Dynamic characteristics
Ciss
Coss
Crss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
-
-
-
880
165
111
1173
198
152
pF
pF
pF
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
-
6
9
ns
ns
ns
ns
nH
36
96
73
2.5
55
134
102
-
turn-off delay time
fall time
LD
internal drain
inductance
from upper edge of drain mounting
base to centre of die; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
-
-
4.5
7.5
-
-
nH
nH
LS
internal source
inductance
from source lead to source bond pad;
Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 34 A; VGS = 0 V; Tj = 25 °C
-
-
-
-
0.85
1.1
1.2
V
-
-
-
V
trr
reverse recovery time IS = 34 A; dIS/dt = -100 A/µs;
36
ns
µC
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Qr
recovered charge
0.07
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
5 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
003aaf287
003aaf288
100
D
(A)
80
40
V
GS
(V) = 10
I
V
GS
(V) = 3.0
R
DS(on)
(mΩ)
6.0
5.5
7.5
7.0
6.5
35
3.2
3.4
5.0
4.8
4.4
60
40
20
0
3.6
4.0
30
25
20
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
5.0
0
2
4
6
8
10
(V)
0
20
40
60
80
V
DS
I
D
(A)
Tj = 25 °C
Tj = 25 °C
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
003aaf289
003aaf290
32
80
R
DS(on)
I
D
(mΩ)
30
(A)
60
28
26
24
22
40
20
0
T = 175 °C
T = 25 °C
j
j
3
5
7
9
11
0
2
4
6
8
I
D
(A)
V
(V)
GS
VDS > ID x RDSon
ID = 25 A
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
6 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
003aaf291
003aaf292
25
fs
(S)
20
3.5
2.5
1.5
0.5
g
a
15
10
5
0
0
5
10
15
20
25
30
35
(A)
−100
0
100
200
I
T
(°C)
D
mb
VDS > ID x RDSon
ID = 25 A; VGS = 5 V
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaf293
003aaf295
2.5
3
V
GS(th)
(V)
2.0
C
(nF)
maximum
typical
C
iss
2
1
1.5
1.0
0.5
0
C
C
oss
minimum
rss
0
10
−2
−1
2
−100
0
100
200
10
1
10
10
T (°C)
j
V
DS
(V)
ID = 1 mA; VDS = VGS
VGS = 0 V; f = 1 MHz
Fig 13. Gate-source threshold voltage as a function of
junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
7 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
003aaf297
003aaf298
6
100
I
F
V
(V)
(A)
80
GS
V
DS
= 14 V
4
60
40
20
0
V
= 44 V
DS
T = 150 °C
j
T = 25 °C
j
2
0
0
5
10
15
20
0
0.5
1.0
1.5
2.0
Q
(nC)
V
(V)
SDS
G
Tj = 25 °C; ID = 25 A
VGS = 0 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
8 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig 17. Package outline SOT404 (D2PAK)
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
9 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
8. Revision history
Table 7.
Revision history
Document ID
BUK9635-55A v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20110421
Product data sheet
-
BUK9535_9635-55A_1
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK9635-55A separated from data sheet BUK9535_9635-55A_1.
BUK9535_9635-55A_1 20000201
Product specification
-
-
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
10 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
9. Legal information
9.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Right to make changes — Nexperia reserves the right to make
9.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of a Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia accepts no
liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
BUK9635-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
11 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless
otherwise agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and conditions of the
respective agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
BUK9635-55A
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 21 April 2011
12 of 13
BUK9635-55A
Nexperia
N-channel TrenchMOS logic level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 April 2011
相关型号：
BUK9635-55T/R
TRANSISTOR 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
NXP
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