BUK9M6R0-40H [NEXPERIA]

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33Production;


型号：	BUK9M6R0-40H
厂家：	Nexperia
描述：	N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33Production
文件：	总11页 (文件大小：282K)
中文：	中文翻译
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BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

29 January 2019

Product data sheet

1. General description

Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9

TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high

performance automotive applications.

2. Features and benefits

•

Fully automotive qualified to AEC-Q101 at 175 °C

Trench 9 superjunction technology:

Low power losses, high power density

LFPAK copper clip package technology:

•

High robustness and reliability

Gull wing leads for high manufacturability and AOI

•

Repetitive avalanche rated

3. Applications

•

12 V automotive systems

Powertrain, chassis, body and infotainment applications

Medium/Low power motor drive

DC-DC systems

LED lighting

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

I_D

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

Fig. 11

3.4

4.9

2.9

mΩ

Q_GD

gate-drain charge

I_D= 20 A; V_DS= 20 V; V_GS= 4.5 V;

Fig. 13; Fig. 14

5.8

Source-drain diode

Q_r

recovered charge

I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V

Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

softness factor

I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; T_j= 25 °C; Fig. 17

0.65

[1] 50A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

source

gate

mbb076

Mounting base; connected to

drain

LFPAK33 (SOT1210)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BUK9M6R0-40H

LFPAK33

Plastic, single ended surface mounted package (LFPAK33); 8

leads; 0.65 mm pitch

SOT1210

7. Marking

Table 4. Marking codes

Type number

Marking code

BUK9M6R0-40H

96H040

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

V_GS

P_tot

Parameter

Conditions

Min

Max

Unit

drain-source voltage

gate-source voltage

total power dissipation

drain current

25 °C ≤ T_j≤ 175 °C

DC; T_j≤ 175 °C

-10

T_mb= 25 °C; Fig. 1

I_D

V_GS= 10 V; T_mb= 25 °C; Fig. 2

V_GS= 10 V; T_mb= 100 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

[1]

I_DM

T_stg

T_j

peak drain current

storage temperature

junction temperature

311

175

-55

°C

Source-drain diode

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

Symbol

I_S

Parameter

Conditions

Min

Max

Unit

source current

peak source current

T_mb= 25 °C

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

311

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-

I_D= 50 A; V_sup≤ 40 V; R_GS= 50 Ω;

source avalanche energy V_GS= 10 V; T_j(init)= 25 °C; unclamped;

Fig. 4

[2] [3]

[1] 50A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[3] Refer to application note AN10273 for further information.

03aa16

aaa-028593

120

(A)

der

(%)

(1)

100

150

200

75 100 125 150 175 200

(°C)

V_GS≥ 10 V

(1) 50A continuous current has been successfully

demonstrated during application tests. Practically

the current will be limited by PCB, thermal design

and operating temperature.

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

Fig. 2. Continuous drain current as a function of

mounting base temperature

aaa-028891

(A)

Limit R

= V / I

DSon

= 10 µs

100 µs

1 ms

10 ms

100 ms

-1

(V)

T_mb= 25 °C; I_DMis a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

BUK9M6R0-40H

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

aaa-028583

(A)

(1)

(2)

(3)

-1

-3

-2

-1

(ms)

(1) T_{j (init)}= 25 °C; (2) T_{j (init)}= 150 °C; (3) Repetitive Avalanche

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance from Fig. 5

junction to mounting

base

1.91

2.14

K/W

aaa-028584

th(j-mb)

(K/W)

δ = 0.5

0.2

0.1

0.05

-1

δ =

0.02

single shot

-2

-6

-5

-4

-3

-2

-1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -40 °C

40.5

BUK9M6R0-40H

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C; Fig. 9;

1.45

1.77

2.15

voltage

Fig. 10

I_D= 1 mA; V_DS=V_GS; T_j= -55 °C; Fig. 10

2.6

I_D= 1 mA; V_DS=V_GS; T_j= 175 °C;

Fig. 10

0.7

I_DSS

drain leakage current

gate leakage current

V_DS= 40 V; V_GS= 0 V; T_j= 25 °C

V_DS= 16 V; V_GS= 0 V; T_j= 125 °C

V_DS= 40 V; V_GS= 0 V; T_j= 175 °C

V_GS= 16 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

0.02

0.6

µA

mΩ

500

100

I_GSS

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

Fig. 11

3.4

4.9

V_GS= 10 V; I_D= 20 A; T_j= 105 °C;

Fig. 12

4.6

5.1

6.2

4.2

5.7

6.3

7.7

0.3

mΩ

V_GS= 10 V; I_D= 20 A; T_j= 125 °C;

Fig. 12

7.6

9.2

6.1

8.7

9.4

11.3

0.8

9.7

11.7

7.7

11.6

12.4

V_GS= 10 V; I_D= 20 A; T_j= 175 °C;

Fig. 12

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C;

Fig. 11

V_GS= 4.5 V; I_D= 15 A; T_j= 105 °C;

Fig. 12

V_GS= 4.5 V; I_D= 15 A; T_j= 125 °C;

Fig. 12

V_GS= 4.5 V; I_D= 15 A; T_j= 175 °C;

Fig. 12

R_G

gate resistance

f = 1 MHz; T_j= 25 °C

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 20 A; V_DS= 20 V; V_GS= 10 V;

Fig. 13; Fig. 14

I_D= 20 A; V_DS= 20 V; V_GS= 4.5 V;

Fig. 13; Fig. 14

Q_GS

Q_GD

C_iss

C_oss

C_rss

gate-source charge

gate-drain charge

input capacitance

output capacitance

4.8

2.9

7.2

5.8

V_DS= 25 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 15

1764 2470 pF

452

633

145

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 20 V; R_L= 1 Ω; V_GS= 4.5 V;

R_G(ext)= 5 Ω

turn-off delay time

fall time

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 20 A; V_GS= 0 V; T_j= 25 °C; Fig. 16

0.85

1.2

reverse recovery time I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; Fig. 17

Q_r

recovered charge

I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V

BUK9M6R0-40H

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

softness factor

I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 20 V; T_j= 25 °C; Fig. 17

0.65

I_S= 20 A; dI_S/dt = -500 A/µs; V_GS= 0 V;

V_DS= 20 V; T_j= 25 °C; Fig. 17

0.43

aaa-028893

aaa-028894

120

(mΩ)

4.5 V

DSon

10 V

(A)

3.5 V

100

= 3 V

2.8 V

2.6 V

(V)

T_j= 25 °C

T_j= 25 °C; I_D= 20 A

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

aaa-028895

aaa-029518

-1

120

(A)

-2

-3

-4

-5

-6

Min

Typ Max

25°C

175°C

T = -55°C

0.5

1.5

2.5

(V)

V_DS= 8 V

T_j= 25 °C; V_DS= 5 V

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Fig. 9. Sub-threshold drain current as a function of

gate-source voltage

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

aaa-029519

aaa-028896

2.8 V 3 V

GS(th)

(V)

(mΩ)

DSon

3.5 V

2.5

Max

Typ

1.5

4.5 V

Min

= 10 V

0.5

-60 -30

90 120 150 180

100

(A)

120

T (°C)

I_D= 1 mA ; V_DS= V_GS

Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Drain-source on-state resistance as a function

junction temperature of drain current; typical values

T_j= 25 °C

aaa-029504

aaa-028897

(V)

1.7

1.4

1.1

0.8

0.5

= 4.5 V

10 V

20 V

= 14 V

-60 -30

90 120 150 180

T (°C)

(nC)

T_j= 25 °C; I_D= 20 A

Fig. 13. Gate-source voltage as a function of gate

charge; typical values

Fig. 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

BUK9M6R0-40H

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

aaa-028898

(pF)

iss

GS(pl)

oss

GS(th)

GS2

rss

GS1

G(tot)

003aaa508

Fig. 14. Gate charge waveform definitions

-1

(V)

V_GS= 0 V; f = 1 MHz

Fig. 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aaf444

aaa-028899

120

100

(A)

0.25 I

175°C

0.6

T = 25°C

S =

0.2

0.4

0.8

(V)

1.2

t (s)

V_GS= 0 V

Fig. 17. Reverse recovery timing definition

Fig. 16. Source-drain (diode forward) current as a

function of source-drain (diode forward)

voltage; typical values

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

11. Package outline

Plastic single ended surface mounted package (LFPAK33); 8 leads

SOT1210

mounting

base

(D)

detail X

2.5

5 mm

scale

Dimensions

(1)

Unit

D ref

2.60

max 0.90 0.10 0.35 2.4 0.20 0.30

nom

2.35

1.90

3.40 2.45

3.20 2.00

3.40 0.65 0.25 0.50

3.20 0.45 0.13 0.30

0.50

0.65 0.65

0.20 0.10

0.80 0.00 0.25 2.2 0.10 0.20

min

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

sot1210_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

14-04-25

16-08-09

SOT1210

Fig. 18. Package outline LFPAK33 (SOT1210)

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

equipment, nor in applications where failure or malfunction of an Nexperia

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. Nexperia and its suppliers accept

no liability for inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

12. Legal information

Data sheet status

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Document status Product

Definition

[1][2]

status [3]

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

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and products using Nexperia products, and Nexperia accepts no liability for

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Customers should provide appropriate design and operating safeguards to

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Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

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Characteristics sections of this document is not warranted. Constant or

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Short data sheet — A short data sheet is an extract from a full data sheet

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Product data sheet

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Nexperia

BUK9M6R0-40H

N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 4

10. Characteristics............................................................4

11. Package outline.......................................................... 9

12. Legal information......................................................10

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 29 January 2019

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BUK9M6R0-40H [NEXPERIA]

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