BZX79-B4V7 [NEXPERIA]
Voltage regulator diodesProduction;型号: | BZX79-B4V7 |
厂家: | Nexperia |
描述: | Voltage regulator diodesProduction 测试 二极管 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BZX79 series
Voltage regulator diodes
Product data sheet
2002 Feb 27
Supersedes data of 1999 May 25
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W.
handbook, halfpage
k
a
APPLICATIONS
MAM239
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
250
see Tables 1 and 2 A
UNIT
IF
continuous forward current
non-repetitive peak reverse current
−
mA
IZSM
tp = 100 μs; square wave;
Tj = 25 °C prior to surge
Ptot
total power dissipation
Tamb = 50 °C; note 1
Tamb = 50 °C; note 2
−
−
−
400
500
40
mW
mW
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.3
Tstg
Tj
storage temperature
junction temperature
−65
−65
+200
+200
°C
°C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.4
MAX.
UNIT
VF
0.9
V
2002 Feb 27
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
SYMBOL
PARAMETER
reverse current
CONDITIONS
MAX.
UNIT
IR
BZX79-B/C2V4
BZX79-B/C2V7
BZX79-B/C3V0
BZX79-B/C3V3
BZX79-B/C3V6
BZX79-B/C3V9
BZX79-B/C4V3
BZX79-B/C4V7
BZX79-B/C5V1
BZX79-B/C5V6
BZX79-B/C6V2
BZX79-B/C6V8
BZX79-B/C7V5
BZX79-B/C8V2
BZX79-B/C9V1
BZX79-B/C10
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
50
μA
20
10
5
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
BZX79-B/C11
BZX79-B/C12
BZX79-B/C13
BZX79-B/C15 to BZX79-B/C75
VR = 0.7VZnom
2002 Feb 27
3
Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
dif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
DIODECAP. NON-REPETITIVE PEAK
r
Cd (pF)
at f = 1 MHz;
VR = 0 V
REVERSE CURRENT
IZSM (A)
at tp = 100 μs; Tamb = 25 °C
at IZtest = 5 mA
BZX79-
Bxxx
Cxxx
Tol. approx.
±5% (C)
Tol. ±2% (B)
at IZtest = 1 mA at IZtest = 5 mA
MIN. MAX. MIN. MAX.
TYP.
275
MAX.
600
TYP. MAX. MIN.
TYP. MAX.
MAX.
MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
2.6
70
75
80
85
85
85
80
50
40
15
6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2.9
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
500
480
400
150
80
0
3.2
0
3.5
0
3.8
0
4.1
0
4.6
0
5.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
5.4
6.0
6.6
40
2.3
7.2
30
6
1.2
3.0
7.9
30
80
6
2.5
4.0
8.7
40
80
6
3.2
4.6
9.6
40
100
150
150
150
170
200
200
225
225
250
250
6
3.8
5.5
10.20 9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
50
8
4.5
6.4
11
10.80 11.20 10.4
11.80 12.20 11.4
12.70 13.30 12.4
14.70 15.30 13.8
15.70 16.30 15.3
17.60 18.40 16.8
19.60 20.40 18.8
21.60 22.40 20.8
23.50 24.50 22.8
50
10
10
10
10
10
10
15
20
25
5.4
7.4
85
12
50
6.0
8.4
85
13
50
7.0
9.4
80
15
50
9.2
11.4
12.4
14.4
15.6
17.6
19.6
75
16
50
10.4
12.4
12.3
14.1
15.9
75
18
50
70
20
60
60
22
60
60
24
60
55
Table 2 Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
dif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 5 and 6)
DIODECAP. NON-REPETITIVE PEAK
r
Cd (pF)
at f = 1 MHz;
VR = 0 V
REVERSE CURRENT
IZSM (A)
at tp = 100 μs; Tamb = 25 °C
at IZtest = 2 mA
BZX79-
Bxxx
Cxxx
Tol. approx.
±5% (C)
Tol. ±2% (B)
at IZtest = 0.5 mA at IZtest = 2 mA
MIN. MAX. MIN. MAX.
TYP.
65
MAX.
300
TYP. MAX. MIN.
TYP. MAX.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.50 27.50 25.1
29.40 30.60 28.0
32.30 33.70 31.0
35.30 36.70 34.0
38.20 39.80 37.0
42.10 43.90 40.0
46.10 47.90 44.0
50.00 52.00 48.0
54.90 57.10 52.0
60.80 63.20 58.0
66.60 69.40 64.0
73.50 76.50 70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
25
30
35
35
40
45
50
60
70
80
90
95
80
18.0
20.6
23.3
26.0
28.7
31.4
35.0
38.6
42.2
58.8
65.6
73.4
22.7
25.7
28.7
31.8
34.8
38.8
42.9
46.9
52.0
64.4
71.7
80.2
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
50
45
45
45
40
40
40
40
35
35
35
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
70
300
325
350
350
375
375
400
425
450
475
500
80
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
K/W
thermal resistance from junction to tie-point lead length 8 mm.
Rth j-a
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
MBG930
3
10
δ = 1
R
th j-a
0.75
0.50
0.33
(K/W)
2
0.20
10
0.10
0.05
0.02
0.01
≤0.001
10
t
t
p
p
δ
=
T
T
1
10
−1
2
3
4
5
1
10
10
10
10
10
t
(ms)
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
2002 Feb 27
6
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
200
10
(1)
10
100
(2)
0
0.6
1
10
0.8
1
−1
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.4 Typical forward current as a function of
forward voltage.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
Z
(mV/K)
S
Z
11
4V3
(mV/K)
10
9V1
−1
5
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
−2
−3
0
3V3
4V7
3V0
2V4
2V7
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZX79-B/C4V7 to BZX79-B/C12.
BZX79-B/C2V4 to BZX79-B/C4V3.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
Fig.6 Temperature coefficient as a function of
working current; typical values.
2002 Feb 27
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
G
D
L
b
1
UNIT
max.
min.
max.
max.
scale
mm
0.56
1.85
4.25
25.4
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
DO-35
EIAJ
97-06-09
SOD27
A24
SC-40
2002 Feb 27
8
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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applications and therefore such inclusion and/or use is at
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Export control ⎯ This document as well as the item(s)
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regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Feb 27
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp10
Date of release: 2002 Feb 27
Document order number: 9397 750 09387
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