GAN7R0-150LBE [NEXPERIA]
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) packageProduction;
| 型号： | GAN7R0-150LBE |
| 厂家： | 
Nexperia |
| 描述： | 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) packageProduction |
| 文件： | 总13页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GAN7R0-150LBE
A
G
L
C
F
150 V, 7 mOhm Gallium Nitride (GaN) FET in a
2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
24 April 2023
Product data sheet
1. General description
The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid
Array (LGA) package. It is a normally-off e-mode device offering superior performance.
2. Features and benefits
•
Enhancement mode - normally-off power switch
•
•
•
•
•
•
•
•
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm
3. Applications
•
•
•
•
•
•
•
•
•
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
High frequency DC-to-DC converters in 48 V systems
400 V to 48 V LLC converters, secondary (rectification) side
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
150
170
Unit
V
drain-source voltage
-
-
-
-
VTDS
transient drain to
source voltage
pulsed; tp = 1 µs; δfactor = 0.01
VGS = 5 V
V
ID
drain current
[1]
-
-
-
-
28
A
Ptot
Tj
total power dissipation Fig. 1
junction temperature
-
28
W
°C
-40
150
Static characteristics
RDSon drain-source on-state
VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 9;
Fig. 10; Fig. 11; Fig. 12
-
-
5.6
2.3
7
-
mΩ
Ω
resistance
RG
gate resistance
f = 5 MHz; Tj = 25 °C
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics
QGD
gate-drain charge
ID = 10 A; VDS = 85 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
-
1.3
7.6
47
-
-
-
nC
nC
nC
QG(tot)
Qoss
total gate charge
output charge
VGS = 0 V; VDS = 85 V; Tj = 25 °C
[2]
[1] Limited by package
[2] Qr is not specified separately from Qoss for e-mode GaN FETs, since Qr = Qoss + QD, and QD = 0. (QD is charge associated with
diffusion of minority carriers. Since there is no body diode, no minority carriers in excess of Qoss have to be transferred for e-mode
GaN FETs.)
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
G
S
D
1
3
2
source
drain
3
D
S
2
G
aaa-036394
Transparent top view
FCLGA3 (SOT8073-1)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
GAN7R0-150LBE
FCLGA3
flip chip land gid array package; no leads; body: 3.2 x 2.2 x SOT8073-1
0.774 mm, 3-pad
7. Marking
Table 4. Marking codes
Type number
Marking code
7R0ELBE
GAN7R0-150LBE
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).Tj = 25 °C unless otherwise stated.
Symbol
VDS
Parameter
Conditions
Min
Max
150
170
Unit
V
drain-source voltage
-
-
VTDS
transient drain to source pulsed; tp = 1 µs; δfactor = 0.01
voltage
V
VGS
gate-source voltage
-4
6
V
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
2 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
Symbol
Parameter
Conditions
Min
Max
Unit
Ptot
total power dissipation
drain current
Fig. 1
-
28
W
ID
VGS = 5 V
[1]
[1]
-
28
A
IDM
peak drain current
storage temperature
junction temperature
pulsed; tp ≤ 10 µs; Fig. 2
-
120
150
150
260
A
Tstg
-40
-40
-
°C
°C
°C
Tj
Tsld(M)
peak soldering
temperature
[1] Limited by package
03ne36
120
Pder
(%)
80
40
0
0
50
100
150
200
°
Tmb ( C)
Fig. 1. Normalized total power dissipation as a function of mounting base temperature
aaa-036267
3
10
I
D
Limit R = V / I
DSon DS D
(A)
2
10
t
p
=10 μS
10
100 μS
1 mS
DC
1
10 mS
-1
10
-1
2
3
10
1
10
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 2. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
3 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-c)
thermal resistance from
junction to case
-
-
26
K/W
Rth(j-mb)
thermal resistance from Fig. 3
junction to mounting
base
-
-
-
-
4.4
57
K/W
K/W
Rth(j-a)
thermal resistance from
junction to ambient
[1]
[1] Rth(j-a) is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
aaa-036262
10
Z
thJB
(K/W)
1
-1
10
10
10
10
10
-2
-3
-4
-5
0.5
0.2
t
p
P
δ =
0.1
T
0.05
0.02
0.01
Single shot
t
t
p
T
-7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
t
P
(S)
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 150 µA; VGS = 0 V; Tj = 25 °C
150
0.8
-
-
V
V
VGS(th)
gate-source threshold ID = 5 mA; VDS = VGS; Tj = 25 °C; Fig. 8
voltage
1.1
2.1
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 120 V; VGS = 0 V; Tj = 25 °C
VGS = 5 V; Tj = 25 °C
-
-
-
-
8
45
32
45
7
µA
µA
µA
mΩ
1
VGS = -4 V; Tj = 25 °C
8
RDSon
RG
drain-source on-state
resistance
VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 9;
Fig. 10; Fig. 11; Fig. 12
5.6
gate resistance
f = 5 MHz; Tj = 25 °C
-
2.3
-
Ω
Dynamic characteristics
QG(tot)
QGS
total gate charge
ID = 10 A; VDS = 85 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
-
7.6
1.7
1.3
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
QGD
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
4 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
Symbol
Parameter
Conditions
Min
Typ
865
280
2.5
Max
Unit
Ciss
input capacitance
output capacitance
VDS = 85 V; VGS = 0 V; f = 100 kHz;
Tj = 25 °C; Fig. 15
-
-
-
-
-
-
pF
Coss
pF
Crss
reverse transfer
capacitance
pF
Co(er)
Co(tr)
Qoss
effective output
capacitance, energy
related
0 V ≤ VDS ≤ 85 V; VGS = 0 V;
Tj = 25 °C; Fig. 16
[1]
[2]
[3]
-
-
380
555
-
-
pF
pF
effective output
capacitance, time
related
0 V ≤ VDS ≤ 85 V; VGS = 0 V;
Tj = 25 °C
output charge
VGS = 0 V; VDS = 85 V; Tj = 25 °C
-
-
47
-
-
nC
V
Source-drain characteristics
VSD source-drain voltage
IS = 0.5 A; VGS = 0 V; Tj = 25 °C;
Fig. 17; Fig. 18; Fig. 19; Fig. 20
1.2
[1] CO(er) is the fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 85 V
[2] CO(tr) is the fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 85 V
[3] Qr is not specified separately from Qoss for e-mode GaN FETs, since Qr = Qoss + QD, and QD = 0. (QD is charge associated with
diffusion of minority carriers. Since there is no body diode, no minority carriers in excess of Qoss have to be transferred for e-mode
GaN FETs.)
aaa-036249
aaa-036250
120
100
80
60
40
20
0
120
100
80
60
40
20
0
I
D
I
D
(A)
V =5V
G
(A)
V =4V
G
V =5V
G
V
=4V
G
V
=3V
G
V
V
=3V
=2V
G
V
G
=2V
G
3
0
1
2
3
4
5
0
1
2
4
5
V
(V)
V
(V)
DS
DS
Tj = 25 °C
Tj = 125 °C
Fig. 4. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
5 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
aaa-036257
aaa-036264
120
100
80
60
40
20
0
80
I
D
Q
(nC)
OSS
(A)
60
40
20
0
25° C
125° C
0
1
2
3
4
GS
5
0
25
50
75
100
125
(V)
150
V
(V)
V
DS
Freq. = 100 kHz
Fig. 6. Transfer characteristics; drain current as a
function of gate-source voltage; typical values Fig. 7. Output charge as a function of drain-source
voltage; typical values
aaa-036260
aaa-036261
2
1.5
1
2.5
V
(V)
a
GS(th)
2
1.5
1
0.5
0
0.5
0
0
25
50
75
100
125
(° C)
150
-50 -25
0
25
50
75 100 125 150
T
J
T (° C)
J
ID = 5 mA ; VDS = VGS
Fig. 8. Gate-source threshold voltage as a function of
junction temperature
Fig. 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
6 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
aaa-036510
aaa-036251
100
40
R
(mΩ)
R
(mΩ)
DSon
DS(on)
I =5A
D
V
GS
= 2.0 V
3.0 V
I =10A
D
80
60
40
20
0
30
20
10
0
I =15A
D
I =20A
D
4.0 V
5.0 V
125
0
25
50
75
100
150
2
2.5
3
3.5
4
4.5
(V)
5
I
(A)
V
GS
D
Tj = 25 °C
T j = 25 °C
Fig. 10. Drain-source on-state resistance as a function Fig. 11. Drain-source on-state resistance as a function
of drain current ; typical values
of gate-source voltage; typical values
aaa-036252
40
R
(mΩ)
I
I
I
I
= 5A
DS(on)
D
D
D
D
V
DS
= 10A
= 15A
= 20A
I
D
30
20
10
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GS
GD
2
2.5
3
3.5
4
4.5
(V)
5
V
GS
Q
G(tot)
003aaa508
Tj = 125 °C
Fig. 13. Gate charge waveform definitions
Fig. 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
7 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
aaa-036266
aaa-036263
4
3
2
5
4
3
2
1
0
10
V
GS
C
(V)
(pF)
C
ISS
10
C
OSS
10
10
1
C
2
RSS
-1
3
0
1
2
3
4
5
6
G
7
8
10
1
10
10
V
10
Q
(nC)
(V)
DS
TJ = 25 °C ; ID = 10 A
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-036265
aaa-036253
5
0
E
(µJ)
I
D
(A)
V
V
V
V
= -4V
= -3V
= -2V
= -1V
OSS
GS
GS
GS
GS
4
-5
-10
-15
-20
-25
V
GS
= 0V
3
2
1
0
0
25
50
75
100
125
(V)
150
-8
-7
-6
-5
-4
-3
-2
V
DS
-1
(V)
0
V
DS
Freq. = 100 kHz
Tj = 25 °C
Fig. 16. COSS stored energy as a function of drain-
source voltage; typical values
Fig. 17. Source current as a function of source-drain
voltage; typical values
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
8 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
aaa-036254
aaa-036255
0
0
I
D
I
D
(A)
(A)
-5
-5
V
V
= -4V
= -3V
GS
V
GS
= 0V
V
GS
= 1V
GS
-10
-15
-20
-25
-10
-15
-20
-25
V
V
= 2V
GS
= 3V
GS
V
V
= 4V
GS
= 5V
GS
V
V
V
= -2V
= -1V
= 0V
GS
GS
GS
-8
-7
-6
-5
-4
-3
-2
DS
-1
0
-2
-1.5
-1
-0.5
DS
0
V
(V)
V
(V)
Tj = 125 °C
Tj = 25 °C
Fig. 18. Source current as a function of source-drain
voltage; typical values
Fig. 19. Source current as a function of source-drain
voltage; typical values
aaa-036256
0
I
D
(A)
-5
-10
-15
-20
-25
V
V
= 5V
= 4V
GS
GS
V
V
V
= 3V
= 2V
= 1V
GS
GS
GS
V
= 0V
GS
-3
-2.5
-2
-1.5
-1
-0.5
(V)
0
V
DS
Tj = 125 °C
Fig. 20. Source current as a function of source-drain voltage; typical values
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
9 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
11. Package outline
FCLGA3: flip chip land gid array package; no leads; body: 3.2 x 2.2 x 0.774 mm, 3-pad
SOT8073-1
L
L
1
3
v
C A
B
v
C
A
B
1
L
4
e
1
L
2
2
3
L
5
e
h (4×)
v
C
A
B
L
3
C
A
seating plane
y
C
A
1
D
B
A
3×
u
C
E
pin 1
index area
0
3 mm
scale
Dimensions (mm are the original dimensions)
(1)
e
e
1
D
E
Unit
A
A
h
L
1
L
2
L
L
L
5
u
v
y
1
3
4
max 0.874 0.254
mm nom 0.774 0.224
0.69 2.99 0.90 0.35 2.24
0.64 2.94 0.85 0.30 2.19
0.59 2.89 0.80 0.25 2.14
1.195 1.695
BSC BSC
0.13
REF
2.2
BSC BSC
3.2
0.1 0.05 0.1
0.674 0.194
min
sot8073-1_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
MO-303
compatible
SOT8073-1
23-03-13
Fig. 21. Package outline FCLGA3 (SOT8073-1)
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
10 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
12. Soldering
Footprint information for reflow soldering of FCLGA3 package
SOT8073-1
3.5
2.95
1.32
0.95
0.375
2.3
2.2
0.41
0.31
0.27
0.2
0.95
(2×)
0.82 0.85 0.95
(3×) (2×) (2×)
0.545
2.5
1.94
0.65
0.62
0.64 0.75
(2×)
1.3
(2×)
0.775
1.55
2.95
3.05
recommended stencil thickness: 0.1 mm
occupied area
solder resist
solder paste
solder land
Dimensions in mm
23-03-16
Issue date
sot8073-1_fr
Fig. 22. Reflow soldering footprint for FCLGA3 (SOT8073-1)
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
11 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
13. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
Data sheet status
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, the
product is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
12 / 13
Nexperia
GAN7R0-150LBE
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA)
package
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................4
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information......................................................12
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 24 April 2023
©
GAN7R0-150LBE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
24 April 2023
13 / 13
相关型号：
©2020 ICPDF网 联系我们和版权申明