MJD2873-Q [NEXPERIA]
50 V, 2 A NPN high power bipolar transistorProduction;
| 型号： | MJD2873-Q |
| 厂家： | 
Nexperia |
| 描述： | 50 V, 2 A NPN high power bipolar transistorProduction |
| 文件： | 总10页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
17 May 2021
Product data sheet
1. General description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
•
High thermal power dissipation capability
•
•
•
•
•
High energy efficiency due to less heat generation
Electrically similar to popular MJD2873 series
Low collector emitter saturation voltage
Fast switching speeds
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
•
•
•
Power management
Load switch
Linear mode voltage regulator
Constant current drive backlighting application
Motor drive
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
50
V
IC
collector current
-
-
-
-
2
A
A
ICM
hFE
peak collector current single pulse; tp ≤ 1 ms
DC current gain VCE = 2 V; IC = 0.5 A; pulsed; tp ≤
-
3
120
360
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
40
-
-
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
mb
B
C
E
C
2
collector
emitter
E
3
B
mb
mounting base; connected
to collector
C; mb
2
aaa-029889
1
3
DPAK (SOT428C)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
MJD2873-Q
DPAK
Plastic single-ended surface-mounted package (DPAK); 3 SOT428C
leads (one lead cropped)
7. Marking
Table 4. Marking codes
Type number
Marking code
MJD2873A
MJD2873-Q
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC601134).
Symbol
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
50
6
Unit
V
collector-emitter voltage open base
-
emitter-base voltage
collector current
open collector
-
V
-
2
A
ICM
peak collector current
total power dissipation
single pulse; tp ≤ 1 ms
Tmb ≤ 25 °C
-
3
A
Ptot
[1]
[2]
-
15
1.6
150
150
150
W
W
°C
°C
°C
Tamb ≤ 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Total power dissipation junction to mounting base.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 µm copper, tin-plated mounting pad for collector 1 cm2.
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
2 / 10
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
aaa-029909
2.0
P
tot
(W)
1.5
1.0
0.5
0
-50
0
50
100
150
200
(°C)
T
amb
FR4 PCB, single-sided 70 µm copper, tin-plated, mounting pad for collector 1 cm2.
Fig. 1. Power derating curves SOT428C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
-
-
79
K/W
Rth(j-mb)
thermal resistance from
junction to mounting
base
-
-
9
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 µm copper, tin-plated mounting pad for collector 1 cm2.
aaa-029910
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.50
0.33
0.20
10
0.10
0.02
0
0.05
0.01
1
-1
10
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided 70 µm copper, tin-plated, mounting pad for collector 1 cm2.
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
3 / 10
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICES
collector-emitter cut-off VCE = 50 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-
-
-
-
-
100
360
-
nA
DC current gain
VCE = 2 V; IC = 0.5 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
120
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
40
80
-
VCE = 1.6 V; IC = 0.75 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
360
0.3
1.2
1.2
0.95
80
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
V
base-emitter saturation
voltage
-
V
base-emitter voltage
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
Tamb = 25 °C
-
V
VCE = 1.6 V; IC = 0.75 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
V
Cc
fT
collector capacitance
transition frequency
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
pF
MHz
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
65
-
aaa-033355
aaa-033356
500
2.0
I
(mA) = 18
B
h
FE
15
I
C
(A)
(1)
12
10
8
400
1.5
300
200
100
0
(2)
(3)
6
1.0
0.5
0
4
3
2
1
2
3
4
10
10
10
10
0
1
2
3
4
5
I
(mA)
V
(V)
CE
C
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Fig. 3. DC current gain as a function of collector
current; typical values
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
4 / 10
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
aaa-033357
aaa-033358
1.2
1.3
V
BE
(V)
V
BEsat
(V)
(1)
(2)
(1)
(2)
0.8
0.9
0.5
0.1
(3)
(3)
0.4
0
2
10
3
4
2
3
4
1
10
10
10
1
10
10
10
10
I
(mA)
I (mA)
C
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Base-emitter saturation voltage as a function of
current; typical values collector current; typical values
aaa-033359
aaa-033360
1
1.0
V
CEsat
(V)
V
CEsat
(V)
0.8
0.6
0.4
0.2
0
(3)
(2)
(1)
-1
10
(1)
(2)
(3)
(4)
(5)
-2
-3
10
10
2
3
4
-2
10
-1
2
3
1
10
10
10
10
10
1
10
10
10
(mA)
B
I
(mA)
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC = 0.01 A
(2) IC = 0.10 A
(3) IC = 0.50 A
(4) IC = 1.00 A
(5) IC = 2.00 A
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 8. Collector-emitter saturation region as a function
of base current; typical values
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
5 / 10
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
aaa-033361
aaa-033362
3
9
10
10
C
(pF)
(1)
f
T
(Hz)
2
10
8
10
(2)
10
7
1
10
10
-1
2
-2
-1
1
10
10
10
10
1
V (V)
I (A)
C
Tamb = 25 °C
VCE = 10 V
(1) Ce
(2) Cc
Tamb = 25 °C
Fig. 10. Transition frequency as a function of collector
current; typical values
Fig. 9. Input/output capacitance as a function of input/
output voltage
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
6.73
6.47
2.38
2.22
10.40
9.60
2
1
3
Dimensions in mm
19-08-28
Fig. 11. Package outline DPAK (SOT428C)
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
6 / 10
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
13. Soldering
Footprint information for reflow soldering of DPAK (SOT428C) package
SOT428C
7
6.15
5.9
5.8
1.8
1
4.725
4.6
5.75 5.65
6.5
0.3
1.15
3.6
6
2.45
6
6.125
2.4 2.3
1.3
1.4
1.5
1.65
4.57
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
19-09-06
Issue date
sot428c_fr
Fig. 12. Reflow soldering footprint for DPAK (SOT428C)
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
7 / 10
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
14. Revision history
Table 8. Revision history
Data sheet ID
MJD2873-Q v.2
Modifications:
Release date
20210517
Data sheet status
Change notice
Supersedes
Product data sheet
-
MJD2873-Q v.1
•
Product status changed
MJD2873-Q v.1
20210426
Objective data sheet
-
-
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
8 / 10
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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and products using Nexperia products, and Nexperia accepts no liability for
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
9 / 10
Nexperia
MJD2873-Q
50 V, 2 A NPN high power bipolar transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................6
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information........................................................9
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 17 May 2021
©
MJD2873-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
10 / 10
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