MJD42C-Q [NEXPERIA]
100 V, 6 A PNP high power bipolar transistorProduction;型号: | MJD42C-Q |
厂家: | Nexperia |
描述: | 100 V, 6 A PNP high power bipolar transistorProduction |
文件: | 总10页 (文件大小:217K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
8 June 2021
Product data sheet
1. General description
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device
(SMD) plastic package.
NPN complement: MJD41C-Q
2. Features and benefits
•
High thermal power dissipation capability
•
•
•
•
•
High energy efficiency due to less heat generation
Electrically similar to popular MJD42 series
Low collector emitter saturation voltage
Fast switching speeds
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
•
•
•
Power management
Load switch
Linear mode voltage regulator
Constant current drive backlighting application
Motor drive
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-100
V
IC
collector current
-
-
-
-
-6
-10
-
A
A
ICM
hFE
peak collector current single pulse; tp ≤ 1 ms
-
DC current gain VCE = -4 V; IC = -0.3 A; pulsed; tp ≤
30
200 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -4 V; IC = -3 A; pulsed; tp ≤
200 µs; δ ≤ 0.02; Tamb = 25 °C
15
-
-
Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
mb
B
C
E
C
2
collector
emitter
E
3
B
mb
mounting base; connected
to collector
C; mb
2
aaa-029523
1
3
DPAK (SOT428C)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
MJD42C-Q
DPAK
Plastic single-ended surface-mounted package (DPAK); 3 SOT428C
leads (one lead cropped)
7. Marking
Table 4. Marking codes
Type number
Marking code
MJD42CA
MJD42C-Q
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
-100
-6
Unit
V
collector-emitter voltage open base
-
emitter-base voltage
collector current
open collector
-
V
-
-6
A
ICM
peak collector current
total power dissipation
single pulse; tp ≤ 1 ms
Tmb ≤ 25 °C
-
-10
15
A
Ptot
[1]
[2]
-
W
W
°C
°C
°C
Tamb ≤ 25 °C
-
1.6
150
150
150
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Total power dissipation junction to mounting base.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 µm copper, tin-plated mounting pad for collector 1 cm2.
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
2 / 10
Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
aaa-029909
2.0
P
tot
(W)
1.5
1.0
0.5
0
-50
0
50
100
150
200
(°C)
T
amb
FR4 PCB, single-sided 70 µm copper, tin-plated, mounting pad for collector 1 cm2.
Fig. 1. Power derating curves SOT428C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
-
-
79
K/W
Rth(j-mb)
thermal resistance from
junction to mounting
base
-
-
9
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided 70 µm copper, tin-plated mounting pad for collector 1 cm2.
aaa-029910
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.50
0.33
0.20
10
0.10
0.02
0
0.05
0.01
1
-1
10
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided 70 µm copper, tin-plated, mounting pad for collector 1 cm2.
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
3 / 10
Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICES
collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current
-
-
-1
µA
IEBO
hFE
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-
-1
µA
DC current gain
VCE = -4 V; IC = -0.3 A; pulsed; tp ≤
200 µs; δ ≤ 0.02; Tamb = 25 °C
30
15
-
-
VCE = -4 V; IC = -3 A; pulsed; tp ≤
200 µs; δ ≤ 0.02; Tamb = 25 °C
-
VCEsat
VBE
collector-emitter
saturation voltage
IC = -6 A; IB = -600 mA; pulsed; tp ≤
200 µs; δ ≤ 0.02; Tamb = 25 °C
-1.5
-2
V
V
base-emitter voltage
VCE = -4 V; IC = -6 A; pulsed; tp ≤
200 µs; δ ≤ 0.02; Tamb = 25 °C
-
hfe
small-signal current
gain
VCE = -10 V; IC = -500 mA; f = 1 kHz;
pulsed; tp ≤ 300 µs; δ ≤ 0.02;
Tamb = 25 °C
20
-
fT
transition frequency
VCE = -10 V; IC = -500 mA; f = 100 MHz;
Tamb = 25 °C
3
-
-
MHz
aaa-033347
aaa-033348
500
-6
I
(mA) = 220
B
200
160
h
FE
I
C
(A)
120
100
400
(1)
80
60
-4
-2
0
300
200
100
0
40
20
10
(2)
(3)
2
3
4
-10
-10
-10
-10
0
-1
-2
-3
-4
-5
I
(mA)
V
(V)
CE
C
VCE = -2 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Fig. 3. DC current gain as a function of collector
current; typical values
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
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Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
aaa-033349
aaa-033350
-1.2
-1.2
V
BE
(V)
V
BEsat
(V)
(1)
(2)
(1)
(2)
-0.8
-0.8
-0.4
0
(3)
(3)
-0.4
0
2
-10
3
4
2
-10
3
4
-1
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I (mA)
C
C
VCE = -4 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
aaa-033351
aaa-033352
-10
-2.0
V
CEsat
(V)
V
CEsat
(V)
(3)
-1.6
-1.2
-0.8
-0.4
0
-1
(2)
(1)
(1)
(2)
(3)
-1
-10
-2
-10
-3
-10
2
3
4
-3
-10
-2
-10
-1
-10
-1
-10
-10
-10
-10
-1
I
(mA)
I (A)
B
C
IC/IB = 10
Tamb = 25 °C
(1) IC = -1 A
(2) IC = -2.5 A
(3) IC = -5 A
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 8. Collector-emitter saturation region as a function
of base current; typical values
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
5 / 10
Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
aaa-033353
3
2
10
C
(pF)
(1)
10
(2)
10
1
-1
10
-1
2
-10
-1
-10
-10
V (V)
Tamb = 25 °C
(1) Ce
(2) Cc
Fig. 9. Input/output capacitance as a function of input/output voltage
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
6.73
6.47
2.38
2.22
10.40
9.60
2
1
3
Dimensions in mm
19-08-28
Fig. 10. Package outline DPAK (SOT428C)
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
6 / 10
Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
13. Soldering
Footprint information for reflow soldering of DPAK (SOT428C) package
SOT428C
7
6.15
5.9
5.8
1.8
1
4.725
4.6
5.75 5.65
6.5
1.15
3.6
6
2.45
6
6.125
0.3
2.4 2.3
1.3
1.4
1.5
1.65
4.57
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
19-09-06
Issue date
sot428c_fr
Fig. 11. Reflow soldering footprint for DPAK (SOT428C)
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
7 / 10
Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
14. Revision history
Table 8. Revision history
Data sheet ID
MJD42C-Q v.2
Modifications:
Release date
20210608
Data sheet status
Change notice
Supersedes
Product data sheet
-
MJD42C-Q v.1
•
Product status changed
MJD42C-Q v.1
20210416
Objective data sheet
-
-
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
8 / 10
Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
equipment, nor in applications where failure or malfunction of an Nexperia
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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Characteristics sections of this document is not warranted. Constant or
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Short data sheet — A short data sheet is an extract from a full data sheet
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be suitable for use in life support, life-critical or safety-critical systems or
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
9 / 10
Nexperia
MJD42C-Q
100 V, 6 A PNP high power bipolar transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................6
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information........................................................9
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 8 June 2021
©
MJD42C-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
8 June 2021
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