MJD44H11A [NEXPERIA]
80 V, 8 A NPN high power bipolar transistorProduction;
| 型号： | MJD44H11A |
| 厂家： | 
Nexperia |
| 描述： | 80 V, 8 A NPN high power bipolar transistorProduction |
| 文件： | 总12页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
12 September 2019
Product data sheet
1. General description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device
(SMD) plastic package.
PNP complement: MJD45H11A
2. Features and benefits
•
High thermal power dissipation capability
•
•
•
•
•
High energy efficiency due to less heat generation
Electrically similar to popular MJD44H series
Low collector emitter saturation voltage
Fast switching speeds
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Power management
Load switch
Linear mode voltage regulator
Constant current drive backlighting application
Motor drive
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
-
-
80
V
IC
collector current
-
-
-
-
8
A
A
ICM
hFE
peak collector current single pulse; tp ≤ 1 ms
DC current gain VCE = 1 V; IC = 2 A; Tamb = 25 °C
-
16
-
60
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
mb
B
C
E
C
E
2
collector
emitter
B
3
C; mb
mb
mounting base; connected
to collector
aaa-029889
2
1
3
DPAK (SOT428C)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
MJD44H11A
DPAK
Plastic single-ended surface-mounted package (DPAK); 3 leads SOT428C
(one lead cropped)
7. Marking
Table 4. Marking codes
Type number
Marking code
MJD44H11A
MJD44H11A
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC601134).
Symbol
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
80
Unit
V
collector-emitter voltage
emitter-base voltage
collector current
-
open collector
-
6
V
-
8
A
ICM
peak collector current
total power dissipation
single pulse; tp ≤ 1 ms
Tmb ≤ 25 °C
-
16
A
Ptot
[1]
[2]
-
20
W
W
°C
°C
°C
Tamb ≤ 25 °C
-
1.75
150
150
150
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Total power dissipation junction to mounting base.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm2.
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
2 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
aaa-029825
2.0
P
tot
(W)
1.5
1.0
0.5
0
-50
0
50
100
150
200
(°C)
T
amb
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Fig. 1. Power derating curves SOT428C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from in free air
junction to mounting
base
-
-
6.25
K/W
Rth(j-a)
thermal resistance from
junction to ambient
[1]
-
-
72
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm2.
aaa-029826
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.50
0.33
0.20
0.25
10
0.10
0.02
0.05
0.01
1
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
3 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
1
Unit
µA
ICES
collector-emitter cut-off VCE = 64 V; VBE = 0 V; Tamb = 25 °C
current
-
-
-
-
-
-
VCE = 64 V; VBE = 0 V; Tj = 150 °C
50
1
µA
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
µA
DC current gain
VCE = 1 V; IC = 2 A; Tamb = 25 °C
VCE = 1 V; IC = 4 A; Tamb = 25 °C
IC = 8 A; IB = 400 mA; Tamb = 25 °C
60
40
-
-
-
-
-
-
VCEsat
VBEsat
collector-emitter
saturation voltage
1
V
V
base-emitter saturation IC = 8 A; IB = 800 mA; Tamb = 25 °C
voltage
-
-
1.5
ton
ts
turn-on time
storage time
fall time
IC = 5 A; IBon = 0.5 mA; IBoff = -0.5 mA;
VCC = 12.5 V; Tamb = 25 °C
-
-
-
-
-
300
250
170
420
30
-
-
-
-
-
ns
ns
ns
ns
pF
tf
toff
Cc
turn-off time
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
fT
transition frequency
VCE = 10 V; IC = 500 mA; f = 100 MHz;
Tamb = 25 °C
-
160
-
MHz
aaa-029827
aaa-029828
400
8
I
(mA) = 140
120
(1)
B
h
FE
I
C
100
80
(A)
300
6
4
2
0
60
50
(2)
(3)
40
30
200
100
0
20
10
2
3
4
10
10
10
10
0
1
2
3
4
5
I
(mA)
V
(V)
CE
C
VCE = 1 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Fig. 3. DC current gain as a function of collector
current; typical values
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
4 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
aaa-029829
aaa-029830
1.2
1.6
V
BEsat
(V)
V
BE
(V)
1.2
0.8
0.4
0
(1)
(2)
0.8
(1)
(2)
(3)
0.4
(3)
0
2
10
3
4
2
3
4
1
10
10
10
1
10
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Base-emitter saturation voltage as a function of
current; typical values collector current; typical values
aaa-029831
aaa-029832
3
1
10
V
CEsat
(V)
f
T
(Mhz)
(1)
(2)
-1
10
2
10
(3)
-2
-3
10
10
10
2
3
4
2
3
1
10
10
10
10
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
VCE = 2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Tamb = 25 °C
Fig. 8. Transition frequency as a function of collector
current; typical values
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
5 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
aaa-029834
aaa-029833
4
3
2
2.0
10
C
(pF)
V
CEsat
(V)
1.5
1.0
0.5
0
10
(1)
10
(2)
10
1
(1)
(2) (3)
(4)
(5)
-1
10
2
3
-1
2
1
10
10
10
10
1
10
10
I
(mA)
V (V)
B
(1) IC = 100 mA
(2) IC = 500 mA
(3) IC = 1000 mA
(4) IC = 3000 mA
(5) IC = 8000 mA
Tamb = 25 °C
(1) Ce
(2) Cc
Fig. 10. Input/output capacitance as a function of input/
output voltage
Fig. 9. Collector-emitter saturation region as a function
of base current; typical values
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
6 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 11. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mlb826
Fig. 12. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
7 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
12. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428C
y
E
A
A
A
b
2
E
1
1
see note 1
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
b
c
w
A
1
(2x)
(2x)
e
e
1
0
5
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
max 2.38 0.93 0.89 1.10 5.46 0.60 6.22
mm nom
min
A
A
b
b
b
c
D
D
E
E
e
e
H
L
L
L
2
w
y
1
1
2
1
2
1
1
D
1
6.73
2.22 0.46 0.71 0.72 5.00 0.20 5.98 4.0 6.47 4.45
10.4 2.95
1.0
9.6 2.55 0.5 0.5
0.2
2.285 4.57
0.2
Note
1. Plastic body may have 45° chamfer.
sot428c_po
References
Outline
version
IEC
European
projection
Issue date
19-08-28
JEDEC
TO-252
JEITA
SC-63
SOT428C
Fig. 13. Package outline DPAK (SOT428C)
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
8 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
13. Soldering
Footprint information for reflow soldering of DPAK (SOT428C) package
SOT428C
7
6.15
5.9
5.8
1.8
1
4.725
4.6
5.75 5.65
6.5
0.3
1.15
3.6
6
2.45
6
6.125
2.4 2.3
1.3
1.4
1.5
1.65
4.57
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
19-09-06
Issue date
sot428c_fr
Fig. 14. Reflow soldering footprint for DPAK (SOT428C)
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
9 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
14. Revision history
Table 8. Revision history
Data sheet ID
MJD44H11A v.3
Modifications:
Release date
20190912
Data sheet status
Change notice
Supersedes
Product data sheet
-
MJD44H11A v.2
•
Package outline adapted to SOT428C
MJD44H11A v.2
MJD44H11A v.1
20190729
20190528
Product data sheet
-
-
MJD44H11A v.1
-
Preliminary data sheet
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
10 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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be suitable for use in life support, life-critical or safety-critical systems or
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
11 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................7
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information......................................................11
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 12 September 2019
©
MJD44H11A
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
12 September 2019
12 / 12
相关型号：
MJD44H11TF
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
FAIRCHILD
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