NHUMD10 [NEXPERIA]
80 V, 100 mA NPN/PNP resistor-equipped double transistorsProduction;型号: | NHUMD10 |
厂家: | Nexperia |
描述: | 80 V, 100 mA NPN/PNP resistor-equipped double transistorsProduction |
文件: | 总20页 (文件大小:371K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
Rev. 1 — 24 July 2020
Product data sheet
1. General description
NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
R1
kΩ
2.2
4.7
10
R2
kΩ
47
47
47
Package
JEITA
SC-88
NPN/NPN
complement:
PNP/PNP
complement:
Nexperia
NHUMD10
NHUMD13
NHUMD9
SOT363
NHUMH10
NHUMH13
NHUMH9
NHUMB10
NHUMB13
NHUMB9
2. Features and benefits
•
•
•
•
•
•
•
100 mA output current capability
High breakdown voltage
Built-in resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
3. Applications
•
•
•
•
Digital applications
Cost saving alternative for BC846 / BC856 series in digital applications
Controlling IC inputs
Switching loads
4. Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor, for the PNP transistor with negative polarity
VCEO
IO
collector-emitter voltage
output current
open base
-
-
-
-
80
V
100
mA
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
5. Pinning information
Table 3. Pinning
Pin
1
Symbol
GND1
I1
Description
Simplified outline
Graphic symbol
O1 I2
GND2
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
6
5
4
2
3
O2
R1
R2
4
GND2
I2
TR2
1
2
3
TR1
R2
5
R1
6
O1
GND1
I1 O2
aaa-007379
6. Ordering information
Table 4. Ordering information
Type number
Package
Name
Description
Version
NHUMD10
NHUMD13
NHUMD9
SC-88
plastic surface-mounted package; 6 leads
SOT363
7. Marking
Table 5. Marking
Type number
Marking code [1]
NHUMD10
NHUMD13
NHUMD9
6P%
6R%
6N%
[1] % = placeholder for manufacturing site code
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
2 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
8. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor, for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
open emitter
open base
-
-
-
80
80
7
V
V
V
open collector
NHUMD10, TR1 (NPN)
NHUMD10, TR2 (PNP)
NHUMD13, TR1 (NPN)
NHUMD13, TR2 (PNP)
NHUMD9, TR1 (NPN)
NHUMD9, TR2 (PNP)
output current
-7
-20
-7
-30
-7
-40
-
+20
+7
V
+30
+7
V
V
+40
+7
V
V
IO
100
235
mA
mW
Ptot
total power dissipation
Tamb ≤ 25 °C
Tamb ≤ 25 °C
[1]
[1]
-
Per device
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
-
350
150
150
150
mW
°C
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
aaa-031893
400
P
tot
(mW)
300
200
100
0
-75
-25
25
75
125
175
(°C)
T
amb
FR4 PCB, single-sided copper, standard footprint
Fig. 1. Per device: Power derating curves for SOT363 (SC-88)
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
3 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
9. Thermal characteristics
Table 7. Thermal characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
in free air
[1]
[1]
-
-
-
-
532
150
K/W
K/W
Rth(j-sp)
Per device
Rth(j-a)
thermal resistance from junction to solder point
thermal resistance from junction to ambient
in free air
-
-
358
K/W
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
aaa-031894
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.20
0.33
2
10
0.10
0.02
0.05
0.01
10
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
4 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
10. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Per transistor, for the PNP transistor with negative polarity
V(BR)CBO
V(BR)CEO
ICBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A
IC = 2 mA; IB = 0 A
VCB = 80 V; IE = 0 A
80
80
-
-
-
-
-
V
collector-emitter
breakdown voltage
-
V
collector-base cut-off
current
100
nA
ICEO
collector-emitter cut-off VCE = 60 V; IB = 0 A
current
-
-
-
-
100
5
nA
µA
VCE = 60 V; IB = 0 A; Tj = 150 °C
IEBO
emitter-base cut-off current
NHUMD10
NHUMD13
NHUMD9
VEB = 7 V; IC = 0 A
-
-
-
-
-
-
270
260
230
-
µA
µA
µA
-
-
hFE
DC current gain
VCE = 5 V; IC =10 mA
100
-
VCEsat
collector-emitter
IC = 10 mA; IB = 0.5 mA
100
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage
NHUMD10
VCE = 5 V ; IC = 100 μA
-
-
-
595
625
690
500
500
500
mV
mV
mV
NHUMD13
NHUMD9
on-state input voltage
NHUMD10
VCE = 0.3 V ; IC = 10 mA
1.2
1.4
1.6
0.81
0.95
1.22
-
-
-
V
V
V
NHUMD13
NHUMD9
bias resistor 1 (input)
NHUMD10
[1] 1.54 2.2
2.86 kΩ
NHUMD13
3.3
7
4.7
10
6.1
13
kΩ
kΩ
NHUMD9
R2/R1
bias resistor ratio
NHUMD10
[1] 17
21
10
4.7
26
12
5.7
NHUMD13
8
NHUMD9
3.7
fT
transition frequency
TR1 (NPN)
VCE = 5 V; IC = 10 mA; f = 100 MHz
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
[2]
-
170
150
-
-
MHz
MHz
TR2 (PNP)
-
Cc
collector capacitance
TR1 (NPN)
-
-
-
-
2.5
3
pF
pF
TR2 (PNP)
[1] See section "Test information" for resistor calculation and test conditions
[2] Characteristics of built-in transistor
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
5 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031813
3
10
h
aaa-031814
FE
(1)
(2)
(3)
0.10
I
= 0.7 mA
B
I
C
0.63 mA
0.49 mA
(A)
2
10
0.08
0.56 mA
0.42 mA
0.35 mA
0.21 mA
0.06
0.04
0.02
0
0.28 mA
0.14 mA
10
1
10
0.07 mA
-1
2
1
10
10
I
(mA)
C
VCE = 5 V
0
1
2
3
4
5
V
(V)
CE
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Tamb = 25 °C
Fig. 4. NHUMD10, TR1 (NPN): Collector current as a
function of collector-emitter voltage; typical
values
Fig. 3. NHUMD10, TR1 (NPN): DC current gain as a
function of collector current; typical values
aaa-031815
aaa-031816
10
10
V
I(on)
(V)
V
I(off)
(V)
1
1
(1)
(2)
(1)
(2)
(3)
(3)
-1
-1
10
10
-1
2
-1
2
10
1
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 5. NHUMD10, TR1 (NPN): On-state input voltage as Fig. 6. NHUMD10, TR1 (NPN): Off-state input voltage as
a function of collector current; typical values
a function of collector current; typical values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
6 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031817
1
aaa-031818
3.5
V
CEsat
(V)
C
c
(pF)
-1
2.5
10
(1)
(2)
(3)
1.5
0.5
-2
10
-1
2
10
1
10
10
I
(mA)
C
IC/IB = 20
0
20
40
60
80
V
(V)
CB
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
f = 1 MHz
Tamb = 25 °C
Fig. 7. NHUMD10, TR1 (NPN): Collector-emitter
saturation voltage as a function of collector
current; typical values
Fig. 8. NHUMD10, TR1 (NPN): Collector capacitance
as a function of collector-base voltage; typical
values
aaa-031740
3
10
h
(1)
(2)
aaa-031741
FE
-0.10
I
= -0.6 mA
B
I
C
-0.54 mA
-0.42 mA
(A)
(3)
2
10
-0.08
-0.48 mA
-0.36 mA
-0.06
-0.04
-0.02
0
-0.30 mA
-0.18 mA
10
-0.24 mA
-0.12 mA
1
-1
-10
2
-0.06 mA
-1
-10
-10
I
(mA)
C
VCE = -5 V
0
-1
-2
-3
-4
-5
V
(V)
CE
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Tamb = 25 °C
Fig. 10. NHUMD10, TR2 (PNP): Collector current as a
function of collector-emitter voltage; typical
values
Fig. 9. NHUMD10, TR2 (PNP): DC current gain as a
function of collector current; typical values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
7 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031742
aaa-031743
-10
-10
V
I(on)
(V)
V
I(off)
(V)
-1
-1
(1)
(2)
(1)
(2)
(3)
(3)
-1
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
(mA)
I (mA)
C
C
VCE = -0.3 V
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 11. NHUMD10, TR2 (PNP): On-state input voltage as Fig. 12. NHUMD10, TR2 (PNP): Off-state input voltage as
a function of collector current; typical values
a function of collector current; typical values
aaa-031744
-1
aaa-031745
10
V
CEsat
(V)
C
(pF)
c
8
-1
-10
6
4
2
0
(1)
(2)
(3)
-2
-10
-1
2
-10
-1
-10
-10
I
(mA)
C
IC/IB = 20
0
-20
-40
-60
-80
V
(V)
CB
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
f = 1 MHz
Tamb = 25 °C
Fig. 13. NHUMD10, TR2 (PNP): Collector-emitter
saturation voltage as a function of collector
current; typical values
Fig. 14. NHUMD10, TR2 (PNP): Collector capacitance
as a function of collector-base voltage; typical
values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
8 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031819
3
10
h
(1)
(2)
(3)
aaa-031820
FE
0.10
I
= 0.750 mA
B
I
0.675 mA
0.525 mA
C
(A)
2
10
0.600 mA
0.450 mA
0.08
0.375 mA
0.225 mA
0.06
0.04
0.02
0
0.300 mA
0.150 mA
10
0.075 mA
1
10
-1
2
1
10
10
I
(mA)
C
VCE = 5 V
0
1
2
3
4
5
V
(V)
CE
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Tamb = 25 °C
Fig. 16. NHUMD13, TR1 (NPN): Collector current as a
function of collector-emitter voltage; typical
values
Fig. 15. NHUMD13, TR1 (NPN): DC current gain as a
function of collector current; typical values
aaa-031821
aaa-031822
10
10
V
I(on)
(V)
V
I(off)
(V)
1
1
(1)
(2)
(1)
(2)
(3)
(3)
-1
-1
10
10
-1
2
-1
2
10
1
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 17. NHUMD13, TR1 (NPN): On-state input voltage as Fig. 18. NHUMD13, TR1 (NPN): Off-state input voltage as
a function of collector current; typical values
a function of collector current; typical values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
9 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031823
1
aaa-031824
3.0
V
CEsat
(V)
C
(pF)
c
2.5
-1
10
2.0
1.5
1.0
0.5
(1)
(2)
(3)
-2
10
-1
2
10
1
10
10
I
(mA)
C
IC/IB = 20
0
20
40
60
80
V
(V)
CB
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
f = 1 MHz
Tamb = 25 °C
Fig. 19. NHUMD13, TR1 (NPN): Collector-emitter
saturation voltage as a function of collector
current; typical values
Fig. 20. NHUMD13, TR1 (NPN): Collector capacitance
as a function of collector-base voltage; typical
values
aaa-031746
3
10
h
aaa-031747
FE
(1)
(2)
(3)
-0.10
I
= -0.70 mA
-0.56 mA
-0.42 mA
B
-0.63 mA
-0.49 mA
I
C
(A)
2
10
-0.08
-0.35 mA
-0.21 mA
-0.06
-0.04
-0.02
0
-0.28 mA
-0.14 mA
10
1
-0.07 mA
-1
-10
2
-1
-10
-10
I
(mA)
C
VCE = -5 V
0
-1
-2
-3
-4
-5
V
(V)
CE
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Tamb = 25 °C
Fig. 22. NHUMD13, TR2 (PNP): Collector current as a
function of collector-emitter voltage; typical
values
Fig. 21. NHUMD13, TR2 (PNP): DC current gain as a
function of collector current; typical values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
10 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031748
aaa-031749
2
-10
-10
V
I(on)
(V)
V
I(off)
(V)
-10
-1
(1)
(2)
(1)
(2)
-1
-1
(3)
(3)
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
(mA)
I (mA)
C
C
VCE = -0.3 V
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 23. NHUMD13, TR2 (PNP): On-state input voltage as Fig. 24. NHUMD13, TR2 (PNP): Off-state input voltage as
a function of collector current; typical values
a function of collector current; typical values
aaa-031750
-1
aaa-031751
10
V
CEsat
(V)
C
(pF)
c
8
-1
-10
6
4
2
0
(1)
(2)
(3)
-2
-10
-1
2
-10
-1
-10
-10
I
(mA)
C
IC/IB = 20
0
-20
-40
-60
-80
V
(V)
CB
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
f = 1 MHz
Tamb = 25 °C
Fig. 25. NHUMD13, TR2 (PNP): Collector-emitter
saturation voltage as a function of collector
current; typical values
Fig. 26. NHUMD13, TR2 (PNP): Collector capacitance
as a function of collector-base voltage; typical
values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
11 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031825
3
10
(1)
(2)
h
aaa-031826
FE
0.10
I
B
= 0.750 mA
0.675 mA
0.525 mA
I
C
(3)
(A)
2
10
0.600 mA
0.450 mA
0.08
0.375 mA
0.225 mA
0.06
0.04
0.02
0
0.300 mA
0.150 mA
10
0.075 mA
1
10
-1
2
1
10
10
I
(mA)
C
VCE = 5 V
0
1
2
3
4
5
V
(V)
CE
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Tamb = 25 °C
Fig. 28. NHUMD9, TR1 (NPN): Collector current as a
function of collector-emitter voltage; typical
values
Fig. 27. NHUMD9, TR1 (NPN): DC current gain as a
function of collector current; typical values
aaa-031827
aaa-031828
2
10
10
V
I(on)
(V)
V
I(off)
(V)
10
(1)
(2)
1
(1)
(2)
1
(3)
(3)
-1
-1
10
10
-1
2
-1
2
10
1
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 29. NHUMD9, TR1 (NPN): On-state input voltage as Fig. 30. NHUMD9, TR1 (NPN): Off-state input voltage as
a function of collector current; typical values
a function of collector current; typical values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
12 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031829
1
aaa-031830
3.0
V
CEsat
(V)
C
(pF)
c
2.5
-1
10
2.0
1.5
1.0
0.5
(1)
(2)
(3)
-2
10
-1
2
10
1
10
10
I
(mA)
C
IC/IB = 20
0
20
40
60
80
V
(V)
CB
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
f = 1 MHz
Tamb = 25 °C
Fig. 31. NHUMD9, TR1 (NPN): Collector-emitter
Fig. 32. NHUMD9, TR1 (NPN): Collector capacitance
as a function of collector-base voltage; typical
values
saturation voltage as a function of collector
current; typical values
aaa-031752
3
10
h
(1)
(2)
aaa-031753
FE
-0.10
I
= -0.650 mA
-0.520 mA
-0.390 mA
B
I
C
-0.585 mA
-0.455 mA
(A)
(3)
2
10
-0.08
-0.325 mA
-0.195 mA
-0.06
-0.04
-0.02
0
10
-0.260 mA
-0.130 mA
1
-0.065 mA
-4
-1
-10
2
-1
-10
-10
I
(mA)
C
VCE = -5 V
0
-1
-2
-3
-5
V
(V)
CE
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Tamb = 25 °C
Fig. 34. NHUMD9, TR2 (PNP): Collector current as a
function of collector-emitter voltage; typical
values
Fig. 33. NHUMD9, TR2 (PNP): DC current gain as a
function of collector current; typical values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
13 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031754
aaa-031755
2
-10
-10
V
I(on)
(V)
V
I(off)
(V)
-10
(1)
(2)
-1
(1)
(2)
-1
-1
(3)
(3)
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
(mA)
I (mA)
C
C
VCE = -0.3 V
VCE = -5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 35. NHUMD9, TR2 (PNP): On-state input voltage as Fig. 36. NHUMD9, TR2 (PNP): Off-state input voltage as
a function of collector current; typical values
a function of collector current; typical values
aaa-031756
-1
aaa-031757
7
C
(pF)
V
c
CEsat
(V)
6
5
4
3
2
1
0
-1
-10
(1)
(2)
(3)
-2
-10
-1
2
-10
-1
-10
-10
I
(mA)
C
IC/IB = 20
0
-20
-40
-60
-80
V
(V)
CB
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
f = 1 MHz
Tamb = 25 °C
Fig. 37. NHUMD9, TR2 (PNP): Collector-emitter
Fig. 38. NHUMD9, TR2 (PNP): Collector capacitance
as a function of collector-base voltage; typical
values
saturation voltage as a function of collector
current; typical values
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
14 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
aaa-031831
aaa-031554
3
3
10
10
f
f
T
T
(MHz)
(MHz)
2
2
10
10
10
10
-1
-10
2
-1
-10
2
1
10
10
-1
-10
-10
I
(mA)
I (mA)
C
C
f = 100 MHz
VCE = 5 V
f = 100 MHz
VCE = -5 V
Tamb = 25 °C
Tamb = 25 °C
Fig. 39. TR1 (NPN): Transition frequency as a function
of collector current; typical values of built-in
transistor
Fig. 40. TR2 (PNP): Transition frequency as a function
of collector current; typical values of built-in
transistor
©
NHUMD10_13_9_SER
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Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
15 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
Resistor calculation
•
Calculation of bias resistor 1 (R1)
•
Calculation of bias resistor ratio (R2/R1)
n.c.
I
I
; I
I1 I2
R1
; I
I3 I4
R2
GND
aaa-020082
Fig. 41. TR1 (NPN): Resistor test circuit
n.c.
I
I
; I
I1 I2
R1
; I
I3 I4
R2
GND
aaa-020083
Fig. 42. TR2 (PNP): Resistor test circuit
Resistor test conditions
Table 9. Resistor test conditions
Type number R1 (kΩ)
R2 (kΩ)
Test conditions
II1
II2
II3
II4
Per transistor, for the PNP transistor with negative polarity
NHUMD10
NHUMD13
NHUMD9
2.2
4.7
10
47
47
47
1.6 mA
1.2 mA
0.8 mA
2.4 mA
1.8 mA
1.1 mA
-55 μA
-55 μA
-55 μA
-105 μA
-105 μA
-105 μA
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
16 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
12. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
2.2 1.35
2.0 1.15
pin 1
index
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
14-10-03
Fig. 43. Package outline SOT363 (SC-88)
13. Soldering
2.65
solder lands
solder resist
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 44. Reflow soldering footprint for SOT363 (SC-88)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig. 45. Wave soldering footprint for SOT363 (SC-88)
©
NHUMD10_13_9_SER
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Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
17 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
14. Revision history
Table 10. Revision history
Data sheet ID
Release date Data sheet status Change
Supersedes
notice
NHUMD10_13_9_SER v.1
20200724
Product data sheet
-
-
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
18 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Disclaimers
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
NHUMD10_13_9_SER
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Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
19 / 20
Nexperia
NHUMD10/13/9 series
80 V, 100 mA NPN/PNP resistor-equipped double transistors
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information........................................................16
12. Package outline........................................................ 17
13. Soldering................................................................... 17
14. Revision history........................................................18
15. Legal information......................................................19
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 24 July 2020
©
NHUMD10_13_9_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
Rev. 1 — 24 July 2020
20 / 20
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