NX3008NBKV [NEXPERIA]
30 V, 400 mA dual N-channel Trench MOSFETProduction;
| 型号： | NX3008NBKV |
| 厂家： | 
Nexperia |
| 描述： | 30 V, 400 mA dual N-channel Trench MOSFETProduction 开关 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
28 December 2022
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead
SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Very fast switching
•
•
•
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
30
8
V
-8
-
V
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
[1]
400
mA
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
-
1
1.4
Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
S1
Description
source TR1
gate TR1
Simplified outline
Graphic symbol
D2
D1
6
5
4
2
G1
3
D2
drain TR2
source TR2
gate TR2
G1
G2
4
S2
5
G2
1
2
3
6
D1
drain TR1
SOT666
S1
S2
017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
NX3008NBKV
SOT666
plastic, surface-mounted package; 6 leads; 0.5 mm pitch; SOT666
1.6 mm x 1.2 mm x 0.55 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
AA
NX3008NBKV
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NX3008NBKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
2 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
30
V
-8
-
8
V
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
400
260
1.6
330
390
1090
mA
mA
A
-
IDM
Ptot
peak drain current
-
total power dissipation
[2]
[1]
-
mW
mW
mW
-
Tsp = 25 °C
-
Per device
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb = 25 °C
[2]
-
500
150
150
150
mW
°C
-55
-55
-65
Tamb
Tstg
°C
°C
Source-drain diode
IS
source current
Tamb = 25 °C
HBM
-
-
400
mA
V
ESD maximum rating
VESD
electrostatic discharge
voltage
[3]
2000
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
001aao121
001aao122
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
-25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
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NX3008NBKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
3 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
001aao252
10
l
D
(A)
1
(1)
(2)
-1
10
10
(3)
(4)
(5)
-2
-1
2
10
1
10
10
V
(V)
DS
IDM is a single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
NX3008NBKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
4 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from in free air
junction to ambient
[1]
-
-
250
K/W
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
330
280
-
380
320
115
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa064
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB; standard footprint
Fig. 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa065
3
10
Z
th(j-a)
duty cycle = 1
0.75
(K/W)
0.5
0.33
2
10
0.25
0.1
0.2
0.05
0.02
0.01
0
10
1
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
©
NX3008NBKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
5 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
VGSth
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
0.6
0.9
1.1
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
VGS = 4.5 V; ID = 350 mA; Tj = 150 °C
VGS = 2.5 V; ID = 200 mA; Tj = 25 °C
VGS = 1.8 V; ID = 10 mA; Tj = 25 °C
VDS = 10 V; ID = 350 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
nA
nA
nA
nA
Ω
-
10
1
IGSS
gate leakage current
0.2
0.2
10
10
1
1
-
-
-
1
-
RDSon
drain-source on-state
resistance
1
1.4
2.5
2.1
2.8
-
1.8
1.4
2
Ω
Ω
Ω
gfs
forward
310
mS
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 15 V; ID = 400 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.52
0.17
0.08
34
0.68
nC
nC
nC
pF
pF
pF
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
50
-
Coss
Crss
6.5
reverse transfer
capacitance
2.2
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 20 V; RL = 250 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
15
11
69
19
30
ns
ns
ns
ns
-
turn-off delay time
fall time
138
-
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 350 mA; VGS = 0 V; Tj = 25 °C
0.47
0.85
1.2
V
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NX3008NBKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
6 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
001aao267
001aao268
-3
0.4
10
4.5 V
2.5 V
I
D
I
D
2 V
(A)
(A)
0.3
(1)
(2) (3)
-4
-5
-6
10
1.75 V
1.5 V
0.2
0.1
0.0
10
10
V
= 1.25 V
GS
0
1
2
3
4
0.0
0.5
1.0
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
001aao269
001aao270
6
6
R (on)
DS
(Ω)
R (on)
DS
(Ω)
(1)
(2)
(3)
4
2
0
4
(4)
2
0
(1)
(2)
(5)
(6)
0.0
0.1
0.2
0.3
0.4
0
1
2
3
4
5
I
D
(A)
V
(V)
GS
Tj = 25 °C
ID = 400 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
(1) VGS = 1.5 V
(2) VGS = 1.75 V
(3) VGS = 2.0 V
(4) VGS = 2.25 V
(5) VGS = 2.5 V
(6) VGS = 4.5 V
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
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NX3008NBKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
7 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
001aao271
001aao272
0.4
2.0
I
D
a
(A)
(1)
(2)
0.3
1.5
1.0
0.5
0.0
0.2
0.1
0.0
0
1
2
3
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
001aao273
001aao274
2
1.5
10
V
GS(th)
(V)
(1)
C
(1)
(2)
(pF)
1.0
0.5
0.0
10
(2)
(3)
(3)
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1)Ciss
(2)Coss
(3) minimum values
(3)Crss
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
NX3008NBKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
8 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
001aao275
5
V
(V)
V
GS
DS
4
I
D
3
2
1
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0.0
Q
Q
GS
GD
0.2
0.4
0.6
Q
G
(nC)
Q
G(tot)
003aaa508
ID = 0.4 A; VDS = 15 V; Tamb = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
001aao276
0.4
I
S
(A)
0.3
(1)
(2)
0.2
0.1
0.0
0.0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
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NX3008NBKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
9 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
p
c
D
E
e
e
H
L
w
y
A
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT666
Fig. 18. Package outline SOT666
©
NX3008NBKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
10 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
13. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
(2×)
1.075
1.7
2
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
(4×)
0.6
(2×)
0.5
(4×)
0.65
(2×)
sot666_fr
Fig. 19. Reflow soldering footprint for SOT666
©
NX3008NBKV
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Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
11 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
NX3008NBKV v.2
Modifications:
Release date
20221228
Data sheet status
Change notice
Supersedes
Product data sheet
-
NX3008NBKV v.1
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia
•
•
•
Legal texts have been adapted to the new company name where appropriate
Product changed to non-automotive qualification
Chapter "Characteristics": typo correction, VSD axis scaling for Fig. 16 revised
NX3008NBKV v.1
20110801
Product data sheet
-
-
©
NX3008NBKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
12 / 14
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
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and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
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or problem which is based on any weakness or default in the customer’s
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[3] The product status of device(s) described in this document may have
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the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
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reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
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Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
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©
NX3008NBKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
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Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 December 2022
©
NX3008NBKV
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
28 December 2022
14 / 14
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